摘要:
A multi-partition Universal Serial Bus (USB) device has a flash memory with multiple partitions of storage. Some partitions are for different operating systems and store OS images. Another partition has a control program while a user partition stores user data and user configuration information. The control program can test the multi-partition USB device and instruct the host computer BIOS to mount a partition from its flash memory as a drive of the host computer. The host computer can then be rebooted. The OS image from the flash memory is loaded into main memory during rebooting, and the host computer executes a new operating system using the new OS image. The user can press buttons on the multi-partition USB device to select which OS to load, and to begin rebooting. Virus removal programs in the alternate OS can help recover from a virus in the primary OS.
摘要:
A low-profile Universal-Serial-Bus (USB) device includes a PCBA in which all passive components and unpackaged IC chips are attached to a single side of a PCB opposite to the metal contacts. The IC chips include, for example, a USB controller chip and a flash memory chip, or a single-chip (combined USB controller/flash memory) chip. Multiple flash IC chips are optionally stacked to increase storage capacity. The IC chip(s) are attached to the PCB by wire bonding or other chip-on-board (COB) technique. The passive components are attached by conventional surface mount technology (SMT) techniques. A molded housing is then formed over the IC chips and passive components such that the device has a uniform thickness. The low-profile USB device is optionally used as a modular insert that is mounted onto a metal case to provide a USB assembly having a plug shell similar to a standard USB male connector.
摘要:
An extended universal serial bus (USB) card reader device is described herein. In one embodiment, a card reader includes a first extended USB (EUSB) connector to be coupled to an external host system, multiple flash memory card sockets capable of receiving multiple flash memory cards inserted therein, multiple flash controllers coupled to the plurality of flash memory card sockets respectively. The card reader further includes a memory for storing executable code, a processor coupled to each of the flash controllers for executing the executable code to control each of the plurality of flash controllers in order to access the corresponding flash memory card inserted therein. The card reader further includes a second EUSB connector to be coupled to an external EUSB device using the extended USB protocols, which is one of an EUSB slave device and an EUSB hub device. Other methods and apparatuses are also described.
摘要:
Systems and methods of manufacturing and testing non-volatile memory (NVM) devices are described. According to one exemplary embodiment, a function test during manufacturing of the NVM modules is conducted with a system comprises a computer and a NVM tester coupling to the computer via an external bus. The NVM tester comprises a plurality of slots. Each of the slots is configured to accommodate respective one of the NVM modules to be tested. The NVM tester is configured to include an input/output interface, a microcontroller with associated RAM and ROM, a data generator, an address generator, a comparator, a comparison status storage space, a test result indicator and a NVM module detector. The data generator generates a repeatable sequence of data bits as a test vector. The known test vector is written to NVM of the NVM module under test. The known test vector is then compared with the data retrieved from the NVM module.
摘要:
A dual-voltage secure digital (SD) card can be inserted into a legacy host or a newer host. Legacy hosts drive a high voltage such as 3.3 volts onto the power line of the SD bus, while newer hosts drive the power line with a reduced voltage such as 1.8 volts. A flash and voltage controller chip on the SD card has a controller core that operates at the reduced voltage. A voltage regulator on the SD card, or a power management unit inside the controller chip generates an internal power voltage of 1.8 volts from the dual-voltage SD bus power line. The internal power voltage is applied to the controller core and to a voltage converter that generates a flash power voltage from the internal power voltage. The flash power voltage is applied to flash-memory chips on the SD card that operate at the higher voltage.
摘要:
Methods and systems of managing memory addresses in a large capacity multi-level cell based flash memory device are described. According to one aspect, a flash memory device comprises a processing unit to manage logical-to-physical address correlation using an indexing scheme. The flash memory is partitioned into N sets. Each set includes a plurality of entries (i.e., blocks). N sets of partial logical entry number to physical block number and associated page usage information (hereinafter ‘PLTPPUI’) are stored in the reserved area of the MLC based flash memory. Only one the N sets is loaded to address correlation and page usage memory (ACPUM), which is a limited size random access memory (RAM). In one embodiment, static RAM (SRAM) is implemented for fast access time for the address correlation. LSA received together with the data transfer request dictates which one of the N sets of PLTPPUI is loaded into ACPUM.
摘要:
High performance and endurance non-volatile memory (NVM) based storage systems are disclosed. According to one aspect of the present invention, a NVM based storage system comprises at least one intelligent NVM device. Each intelligent NVM device includes a control interface logic and NVM. Logical-to-physical address conversion is performed within the control interface logic, thereby eliminating the need of address conversion in a storage system level controller. In another aspect, a volatile memory buffer together with corresponding volatile memory controller and phase-locked loop circuit is included in a NVM based storage system. The volatile memory buffer is partitioned to two parts: a command queue; and one or more page buffers. The command queue is configured to hold received data transfer commands by the storage protocol interface bridge, while the page buffers are configured to hold data to be transmitted between the host computer and the at least one NVM device.
摘要:
Systems and methods of manufacturing and testing non-volatile memory (NVM) devices are described. According to one exemplary embodiment, a function test during manufacturing of the NVM modules is conducted with a system comprises a computer and a NVM tester coupling to the computer via an external bus. The NVM tester comprises a plurality of slots. Each of the slots is configured to accommodate respective one of the NVM modules to be tested. The NVM tester is configured to include an input/output interface, a microcontroller with associated RAM and ROM, a data generator, an address generator, a comparator, a comparison status storage space, a test result indicator and a NVM module detector. The data generator generates a repeatable sequence of data bits as a test vector. The known test vector is written to NVM of the NVM module under test. The known test vector is then compared with the data retrieved from the NVM module.
摘要:
High performance flash memory devices (FMD) are described. According to one exemplary embodiment of the invention, a high performance FMD includes an I/O interface, a FMD controller, and at least one non-volatile memory module along with corresponding at least one channel controller. The I/O interface is configured to connect the high performance FMD to a host computing device The FMD contoller is configured to control data transfer (e.g., data reading, data writing/programming, and data erasing) operations between the host computing device and the non-volatile memory module. The at least one non-volatile memory module, comprising one or more non-volatile memory chips, is configured as a secondary storage for the host computing device. The at least one channel controller is configured to ensure proper and efficient data transfer between a set of data buffers located in the FMD controller and the at least one non-volatile memory module.
摘要翻译:描述了高性能闪存设备(FMD)。 根据本发明的一个示例性实施例,高性能FMD包括I / O接口,FMD控制器以及至少一个非易失性存储器模块以及对应的至少一个通道控制器。 I / O接口被配置为将高性能FMD连接到主机计算设备FMD控制器被配置为控制主计算设备和主计算设备之间的数据传输(例如,数据读取,数据写入/编程和数据擦除)操作 非易失性内存模块。 包括一个或多个非易失性存储器芯片的至少一个非易失性存储器模块被配置为主计算设备的辅助存储器。 至少一个通道控制器被配置为确保位于FMD控制器和至少一个非易失性存储器模块中的一组数据缓冲器之间的适当和有效的数据传输。
摘要:
Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.