公开(公告)号：US07666576B2

公开(公告)日：2010-02-23

申请号：US11461234

申请日：2006-07-31

Applicant: Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/20

CPC classification number: G03B27/42 ,  G03F7/70466

Abstract: A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam.

Abstract translation: 公开了一种用于对衬底上的多个场进行图案化的光刻工艺。 该过程包括使用辐射束沿第一方向扫描第一场。 此后，当沿着第一方向观察第一和第二场时，处理步骤到与第一场相邻并位于第一场后面的第二场。 然后使用辐射束沿着第一方向扫描第二场。

公开(公告)号：US07517639B2

公开(公告)日：2009-04-14

申请号：US11522611

申请日：2006-09-18

Applicant: Burn Jeng Lin ,  Tsai-Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Shinn Sheng Yu ,  Jen Chieh Shih

Inventor： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Shinn Sheng Yu ,  Jen Chieh Shih

IPC: G03B27/52

CPC classification number: G03F7/70341 ,  G03F7/707 ,  G03F7/70808

Abstract: Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.

Abstract translation: 公开了用于浸没式光刻系统的各种密封环装置。 利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

公开(公告)号：US07482280B2

公开(公告)日：2009-01-27

申请号：US11426233

申请日：2006-06-23

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/302 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

公开(公告)号：US07473517B2

公开(公告)日：2009-01-06

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

IPC: G03F7/30

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

Abstract translation: 在半导体衬底上产生抗蚀剂图像的方法包括：使用包括超临界二氧化碳和碱（例如四甲基氢氧化铵（TMAH））的第一流体在半导体衬底上曝光光致抗蚀剂层并显影曝光的光致抗蚀剂层。 此外，可以使用包括超临界二氧化碳和溶剂如甲醇，乙醇，异丙醇和二甲苯的第二流体来清洗显影的光致抗蚀剂。

公开(公告)号：US20080304025A1

公开(公告)日：2008-12-11

申请号：US11760365

申请日：2007-06-08

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: G03F7/70716 ,  G03F7/70341

Abstract: An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer.

Abstract translation: 浸没式光刻设备包括具有成像透镜的透镜组件，用于将晶片固定在透镜组件下方的晶片台，用于将流体提供到透镜组件和晶片之间的空间的流体模块以及定位在多个提取单元 靠近晶片的边缘。 提取单元被配置为独立地操作以去除设置在透镜组件和晶片之间的空间中的一部分流体。

公开(公告)号：US07420188B2

公开(公告)日：2008-09-02

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US07279267B2

公开(公告)日：2007-10-09

申请号：US10644356

申请日：2003-08-19

Applicant: Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F1/50 ,  G03F7/0035 ,  G03F7/2026

Abstract: A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.

Abstract translation: 一种用于选择性地改变辐射敏感聚合物层的厚度的方法，包括提供包括具有第一厚度形貌的至少一个辐射敏感聚合物层的基底; 使所述至少一个辐射敏感聚合物层通过具有预定辐射能透射率分布的掩模曝光，以选择性地将所述至少一个敏感聚合物层的预定区域暴露于预定的辐射能量剂量; 以及显影所述至少一个辐射敏感聚合物层以改变所述至少一个辐射敏感聚合物层的第一厚度形貌以产生第二厚度拓扑。

公开(公告)号：US06788477B2

公开(公告)日：2004-09-07

申请号：US10278962

申请日：2002-10-22

Applicant: Burn Jeng Lin

Inventor： Burn Jeng Lin

IPC: G02B702

CPC classification number: G02B7/028 ,  G02B7/04 ,  G03F7/70341

Abstract: An apparatus for immersion lithography that includes an imaging lens which has a front surface, a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.