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    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK
    92.
    发明申请
    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK 有权
    用光源提供波长减小的装置和方法

    公开(公告)号：US20110244378A1

    公开(公告)日：2011-10-06

    申请号：US13160231

    申请日：2011-06-14

    Applicant: Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    Inventor： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC: G03F1/00 ,  G03F7/20

    CPC classification number: G03F1/50 ,  G03F1/46

    Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    Abstract translation: 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    Pellicle stress relief
    94.
    发明授权
    Pellicle stress relief 有权
    防护薄膜应力消除

    公开(公告)号：US07829248B2

    公开(公告)日：2010-11-09

    申请号：US12029275

    申请日：2008-02-11

    Applicant: Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

    Inventor： Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

    IPC: G03F1/00

    CPC classification number: G03F1/64

    Abstract: The present disclosure provides a mask-pellicle system for lithography patterning. The mask-pellicle system includes a mask substrate; a predefined pattern formed on the transparent pattern; a pellicle configured approximate the transparent substrate; a pellicle frame designed to secure the pellicle; and a stress-absorbing feature configured between the pellicle frame and the mask substrate, to reduce stress of the mask substrate.

    Abstract translation: 本公开提供了一种用于光刻图案化的掩模防护薄膜系统。 掩模防护薄膜系统包括掩模基板; 形成在透明图案上的预定图案; 近似透明基板的防护薄膜组件; 设计用于固定防护薄膜的防护薄膜框架; 以及构造在防护薄膜框架和掩模基板之间的应力吸收特征，以减小掩模基板的应力。

    Exposure scan and step direction optimization
    95.
    发明授权
    Exposure scan and step direction optimization 有权
    曝光扫描和步进方向优化

    公开(公告)号：US07666576B2

    公开(公告)日：2010-02-23

    申请号：US11461234

    申请日：2006-07-31

    Applicant: Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    Inventor： Fu-Jye Liang ,  Lin-Hung Shiu ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    IPC: G03F7/20

    CPC classification number: G03B27/42 ,  G03F7/70466

    Abstract: A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam.

    Abstract translation: 公开了一种用于对衬底上的多个场进行图案化的光刻工艺。 该过程包括使用辐射束沿第一方向扫描第一场。 此后，当沿着第一方向观察第一和第二场时，处理步骤到与第一场相邻并位于第一场后面的第二场。 然后使用辐射束沿着第一方向扫描第二场。

    Method for manipulating the topography of a film surface
    97.
    发明授权
    Method for manipulating the topography of a film surface 有权
    操纵膜表面形貌的方法

    公开(公告)号：US07279267B2

    公开(公告)日：2007-10-09

    申请号：US10644356

    申请日：2003-08-19

    Applicant: Tsai-Sheng Gau ,  Burn Jeng Lin

    Inventor： Tsai-Sheng Gau ,  Burn Jeng Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F1/50 ,  G03F7/0035 ,  G03F7/2026

    Abstract: A method for selectively altering a thickness of a radiation sensitive polymer layer including providing a substrate including at least one radiation sensitive polymer layer having a first thickness topography; exposing the at least one radiation sensitive polymer layer through a mask having a predetermined radiant energy transmittance distribution to selectively expose predetermined areas of the at least one sensitive polymer layer to predetermined radiant energy dosages; and, developing the at least one radiation sensitive polymer layer to alter the first thickness topography of the at least one radiation sensitive polymer layer to produce a second thickness topography.

    Abstract translation: 一种用于选择性地改变辐射敏感聚合物层的厚度的方法，包括提供包括具有第一厚度形貌的至少一个辐射敏感聚合物层的基底; 使所述至少一个辐射敏感聚合物层通过具有预定辐射能透射率分布的掩模曝光，以选择性地将所述至少一个敏感聚合物层的预定区域暴露于预定的辐射能量剂量; 以及显影所述至少一个辐射敏感聚合物层以改变所述至少一个辐射敏感聚合物层的第一厚度形貌以产生第二厚度拓扑。

    Apparatus for method for immersion lithography
    98.
    发明授权
    Apparatus for method for immersion lithography 有权

    公开(公告)号：US06788477B2

    公开(公告)日：2004-09-07

    申请号：US10278962

    申请日：2002-10-22

    Applicant: Burn Jeng Lin

    Inventor： Burn Jeng Lin

    IPC: G02B702

    CPC classification number: G02B7/028 ,  G02B7/04 ,  G03F7/70341

    Abstract: An apparatus for immersion lithography that includes an imaging lens which has a front surface, a wafer that has a top surface to be exposed positioned spaced-apart and juxtaposed to the front surface of the imaging lens, and a fluid that has a refractive index between about 1.0 and about 2.0 filling a gap formed in-between the front surface of the imaging lens and the top surface of the wafer. A method for immersion lithography can be carried out by flowing a fluid through a gap formed in-between the front surface of an imaging lens and a top surface of a wafer. The flow rate and temperature of the fluid can be controlled while particulate contaminants are filtered out by a filtering device.

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