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114 条记录 (耗时 0.031 秒)

    Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition
    92.
    发明申请
    Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition 有权
    通过化学气相沉积法沉积氮化硅膜和氮氧化硅膜的方法

    公开(公告)号：US20050037627A1

    公开(公告)日：2005-02-17

    申请号：US10497455

    申请日：2002-11-27

    申请人： Christian Dussarrat ,  Jean-Marc Girard

    发明人： Christian Dussarrat ,  Jean-Marc Girard

    IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/455 ,  H01L21/318 ,  H01L21/469 ,  H01L21/31

    CPC分类号： C23C16/308 ,  C23C16/345

    摘要： (Problem) To provide a method for the production of silicon nitride and silicon oxynitride films by CVD technology, wherein said method provides acceptable film-deposition rates even at lower temperatures and is not accompanied by the production of large amounts of ammonium chloride. (Solution) Use of a hydrocarbylaminodisilane compound with the formula (R0)3—Si—(R0)3 (I) {each R0 is independently selected from the hydrogen atom chlorine atom, and —NR1(R2) groups (wherein R1 and R2 are each independently selected from the hydrogen atom and C1 to C4 hydrocarbyl with the proviso that R1 and R2 may not both be the hydrogen atom) and at least one R0 is the —NR1(R2) group} as a precursor for silicon nitride and silicon oxynitride.

    摘要翻译： （问题）提供通过CVD技术制造氮化硅和氮氧化硅膜的方法，其中所述方法即使在较低温度下也提供可接受的膜沉积速率，并且不伴随产生大量的氯化铵。 （溶液）使用式（R 0）3-Si-（R 0）3（I）{各R 0独立地选自氢原子氯原子和-NR（R 0））的烃基氨基二硅烷化合物 （R 2）基团（其中R 1和R 2各自独立地选自氢原子和C 1至C 4烃基，条件是R 1和R 2不能都是 作为氢原子），并且至少一个R 0是-NR 1（R 2）基团）作为氮化硅和氮氧化硅的前体。

    Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
    98.
    发明授权
    Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films 有权
    含镧系元素前体的制备和含镧系元素的膜的沉积

    公开(公告)号：US08283201B2

    公开(公告)日：2012-10-09

    申请号：US12479175

    申请日：2009-06-05

    申请人： Venkateswara R. Pallem ,  Christian Dussarrat

    发明人： Venkateswara R. Pallem ,  Christian Dussarrat

    IPC分类号： H01L51/40

    CPC分类号： H01L21/02192 ,  C07C257/14 ,  C07F17/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45531

    摘要： Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

    摘要翻译： 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

    Method of forming silicon oxide containing films
    99.
    发明授权
    Method of forming silicon oxide containing films 有权
    形成含氧化硅膜的方法

    公开(公告)号：US08227032B2

    公开(公告)日：2012-07-24

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至400℃的基板温度下在减压下将惰性气体进料到反应室内，在相同的温度和减压下通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。