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    DEPOSITION METHOD OF TERNARY FILMS
    4.
    发明申请
    DEPOSITION METHOD OF TERNARY FILMS 审中-公开
    三层膜的沉积方法

    公开(公告)号：US20100104755A1

    公开(公告)日：2010-04-29

    申请号：US11993570

    申请日：2005-06-29

    申请人： Christian Dussarrat ,  Kazutaka Yanagita ,  Julien Gatineau

    发明人： Christian Dussarrat ,  Kazutaka Yanagita ,  Julien Gatineau

    IPC分类号： C23C16/34 ,  C23C16/30

    CPC分类号： C23C16/34

    摘要： Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl 5 , SEt 2 ), a silicon precursor (for example, SiH(NMe 2 ) 3 or (SiH 3 ) 3 N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H 2 ) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step.

    摘要翻译： 通过引入不含金属-C或金属-N-C键的金属源来制造含金属膜的方法（例如，TaCl 5，SEt 2 SUB）），硅前体（例如，SiH（NMe 3）3 3或（SiH 3 N 3）3） > N），诸如氨的氮前体，诸如一甲胺或乙烯的碳源和还原剂（例如H 2 N 2）加入到CVD室中并在基板的表面上使其反应 以在一个步骤中制造含金属膜。

    Method for the deposition of a Ruthenium containing film
    6.
    发明授权
    Method for the deposition of a Ruthenium containing film 有权
    沉积含钌膜的方法

    公开(公告)号：US08557339B2

    公开(公告)日：2013-10-15

    申请号：US12520116

    申请日：2007-12-20

    申请人： Julien Gatineau ,  Christian Dussarrat

    发明人： Julien Gatineau ,  Christian Dussarrat

    IPC分类号： C23C16/18

    CPC分类号： C07F15/0046 ,  C23C16/18

    摘要： Disclosed are processes for depositing ruthenium containing films on substrates using an organometallic compound having the following formula: L-Ru—X  (I) wherein L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted.

    摘要翻译： 公开了使用具有下式的有机金属化合物在底物上沉积含钌膜的方法：其中L是具有至少六个环状碳原子的非芳族环状不饱和烃配体（L）的L-Ru-X（I） 所述循环是未取代的或取代的，X是与（L）相同或不同的非芳族环状不饱和烃配体，具有至少六个环状碳原子，所述周期是未取代的或被取代的，或环状或非环状的共轭二烯烃配体， 五至十个碳原子，所述烃配体是未取代的或被取代的。

    Heteroleptic iridium precursors to be used for the deposition of iridium-containing films
    8.
    发明授权
    Heteroleptic iridium precursors to be used for the deposition of iridium-containing films 有权
    用于沉积含铱膜的异铱前体

    公开(公告)号：US08309174B2

    公开(公告)日：2012-11-13

    申请号：US12424265

    申请日：2009-04-15

    申请人： Julien Gatineau ,  Christian Dussarrat

    发明人： Julien Gatineau ,  Christian Dussarrat

    IPC分类号： C23C16/18 ,  C07F15/00

    CPC分类号： C07F17/02 ,  C23C16/18 ,  C23C16/45553

    摘要： The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

    摘要翻译： 本发明提供了一种用于在基材上沉积含铱膜的方法，该方法包括以下步骤：在反应器中提供至少一个基材; 将具有下式的至少一种含有铱的前体引入反应器中：其中A等于1或2，i）当A为1时，X为二烯基配体，Y为二烯配体; ii）当A为2时，a）X为二烯基配体，Y选自CO和乙烯配体，b）X为选自H，烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基，烷基甲硅烷基酰胺，烷基氨基和氟代烷基的配体，以及 每个Y是二烯配体，和c）X是二烯基配体，Y是二烯配体; 在等于或大于100℃的温度下使反应器中的至少一种含铱前体反应; 以及将由所述至少一种含铱前体的反应形成的含铱膜沉积在所述至少一个基底上。

    Method for Cleaning Film-Forming Apparatuses
    10.
    发明申请
    Method for Cleaning Film-Forming Apparatuses 审中-公开
    清洗成膜装置的方法

    公开(公告)号：US20080121249A1

    公开(公告)日：2008-05-29

    申请号：US10583641

    申请日：2004-12-10

    申请人： Julien Gatineau ,  Christian Dussarrat ,  Kazutaka Yanagita ,  Tomomi Fujita ,  Jean-Marc Girard

    发明人： Julien Gatineau ,  Christian Dussarrat ,  Kazutaka Yanagita ,  Tomomi Fujita ,  Jean-Marc Girard

    IPC分类号： B08B5/00

    CPC分类号： B08B7/00 ,  C23C14/564 ,  C23C16/4405 ,  C23C16/4412

    摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.

    摘要翻译： 为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在 钌型沉积物的表面区域最少包含固体氧化钌。 至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。 通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。