公开(公告)号：US08368600B2

公开(公告)日：2013-02-05

申请号：US12807601

申请日：2010-09-08

申请人： Yu-Jen Wang ,  Wei-Bin Lee

发明人： Yu-Jen Wang ,  Wei-Bin Lee

IPC分类号： H01Q1/38 ,  H01Q1/24

CPC分类号： H01Q1/2275 ,  H01Q5/371 ,  H01Q9/42

摘要： A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another.

摘要翻译： 用于无线网络设备的双频天线包括第一，第二和第三散热器。 第一和第二散热器通过支架部分连接。 第二散热器是具有连接部和自由端部的大致C字形的板。 接地端和输入端设置在连接部分的预定位置处，并分别电连接到基板的接地部分和控制电路。 自由端部分与第一散热器的正交投影重叠并且平行于第一散热器。 第三散热器经由导电柱电连接到第二散热器，并且平行于第二散热器。 第二和第三散热器设置在基板上，而第一散热器设置在基板的外部。 第一，第二和第三散热器彼此平行并间隔开。

公开(公告)号：US08154847B2

公开(公告)日：2012-04-10

申请号：US12209210

申请日：2008-09-12

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： H01G4/005 ,  H01G4/06

CPC分类号： H01L23/5223 ,  H01L27/0207 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor structure is disclosed. The capacitor structure includes at least a D1+ first-level array. The D1+ first-level array comprises three first D1+ conductive pieces and a second D1+ conductive piece. Two of the first D1+ conductive pieces are disposed in a first row of the D1+ first-level array, and the remaining first D1+ conductive piece and the second D1+ conductive piece are disposed in a second row of the D1+ first-level array from left to right. The adjacent first D1+ conductive pieces are connected to each other, and the first D1+ conductive pieces are not connected to the second D1+ conductive piece.

摘要翻译： 公开了一种电容器结构。 电容器结构至少包括一个D1 +一级阵列。 D1 +第一级阵列包括三个第一D1 +导电片和第二D1 +导电片。 第一D1 +导电片中的两个被布置在D1 +第一电平阵列的第一行中，并且剩余的第一D1 +导电片和第二D1 +导电片从左至右布置在D1 +第一电平阵列的第二行中 对。 相邻的第一D1 +导电片彼此连接，并且第一D1 +导电片不连接到第二D1 +导电片。

公开(公告)号：US08111544B2

公开(公告)日：2012-02-07

申请号：US12617982

申请日：2009-11-13

申请人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

发明人： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/1677 ,  G11C11/1675

摘要： A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

摘要翻译： 写入磁阻随机存取存储器（MRAM）单元的方法包括提供写入脉冲以将值写入MRAM单元; 以及在提供第一写入脉冲的步骤之后立即验证MRAM单元的状态。 在写入失败的情况下，该值被重写到MRAM单元中。

公开(公告)号：US20110304510A1

公开(公告)日：2011-12-15

申请号：US12807585

申请日：2010-09-08

申请人： Yu-Jen Wang ,  Wei-Bin Lee

发明人： Yu-Jen Wang ,  Wei-Bin Lee

IPC分类号： H01Q9/04 ,  H01Q1/24

CPC分类号： H01Q9/42 ,  H01Q1/243 ,  H01Q1/38

摘要： A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device.

摘要翻译： 用于无线网络设备的平面倒F天线包括连接构件和两个散热器。 连接构件具有至少一个输入端和至少一个接地端。 每个散热器具有垂直地连接到连接构件的两个端部中的一个的第一端部部分，并且两个散热器的形状彼此平行并对应。 每个散热器还具有L形凹口，因此形成倒钩。 每个散热器的第二端部被弯曲以形成大致平行于连接构件的接合端，并且被配置成与无线网络设备的基板紧固。

公开(公告)号：US20110122674A1

公开(公告)日：2011-05-26

申请号：US12626092

申请日：2009-11-25

申请人： CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

发明人： CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

IPC分类号： G11C11/22 ,  H01L29/82 ,  H01L21/28

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

摘要： Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

摘要翻译： 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

公开(公告)号：US07719882B2

公开(公告)日：2010-05-18

申请号：US11743453

申请日：2007-05-02

申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US20100118603A1

公开(公告)日：2010-05-13

申请号：US12687608

申请日：2010-01-14

申请人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

发明人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

摘要翻译： 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。

公开(公告)号：US07443638B2

公开(公告)日：2008-10-28

申请号：US10907974

申请日：2005-04-22

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

IPC分类号： G11B5/39 ,  G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

公开(公告)号：US20080135957A1

公开(公告)日：2008-06-12

申请号：US11674581

申请日：2007-02-13

申请人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

发明人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

摘要： Disclosed herein is an improved memory device wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

摘要翻译： 这里公开了一种改进的存储装置，其中由常规着陆垫占据的面积显着地减小到常规着陆垫占据的面积的大约50％至10％。 这是通过从电池结构中移除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US20080100715A1

公开(公告)日：2008-05-01

申请号：US11966771

申请日：2007-12-28

申请人： Shyang-Jye Chang ,  Yu-Jen Wang ,  Yi-Cheng Chen ,  Tai-Feng Wu

发明人： Shyang-Jye Chang ,  Yu-Jen Wang ,  Yi-Cheng Chen ,  Tai-Feng Wu

IPC分类号： H04N5/228

CPC分类号： A61K36/185 ,  H04N5/2253 ,  H04N5/23248

摘要： Disclosed is an image-stabilization driving device including a first sliding member connected to an image sensor; a first piezoelectrical element for driving the first sliding member to move linearly along a first direction; a second sliding member connected to the first piezoelectrical element; and a second piezoelectrical element for driving the second sliding member to move linearly along a second direction intersecting with the first direction. The first and second piezoelectrical elements are adapted to drive the image sensor to move in a plane, thereby providing a structurally simple and miniaturized image-stabilization driving device.

摘要翻译： 公开了一种图像稳定驱动装置，包括连接到图像传感器的第一滑动部件; 用于驱动所述第一滑动构件沿着第一方向线性移动的第一压电元件; 连接到所述第一压电元件的第二滑动构件; 以及用于驱动所述第二滑动构件沿着与所述第一方向相交的第二方向线性移动的第二压电元件。 第一和第二压电元件适于驱动图像传感器在平面中移动，从而提供结构简单且小型化的图像稳定驱动装置。