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    Positive Electrode active material for non-aqueous electrolyte-based secondary battery, production method therefor and non-aqueous electrolyte-based secondary battery using the same
    92.
    发明授权
    Positive Electrode active material for non-aqueous electrolyte-based secondary battery, production method therefor and non-aqueous electrolyte-based secondary battery using the same 有权
    非水电解质型二次电池用正极活性物质及其制造方法以及使用其的非水电解质二次电池

    公开(公告)号：US08187747B2

    公开(公告)日：2012-05-29

    申请号：US11727389

    申请日：2007-03-26

    申请人： Isao Abe ,  Satoshi Matsumoto ,  Shuji Tsutsumi ,  Takashi Takeuchi

    发明人： Isao Abe ,  Satoshi Matsumoto ,  Shuji Tsutsumi ,  Takashi Takeuchi

    IPC分类号： H01M4/00

    CPC分类号： H01M4/525 ,  C01G51/42 ,  C01G53/00 ,  C01G53/42 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/88 ,  C01P2006/12 ,  C01P2006/40

    摘要： The present invention provides a positive electrode active material for a non-aqueous electrolyte-based secondary battery, composed of a lithium/nickel composite oxide with high capacity, low cost and excellent heat stability, an industrially suitable production method therefor, and a high safety non-aqueous electrolyte-based secondary battery. A lithium/nickel composite oxide is produced by the following steps (a) to (c): (a) Nickel hydroxide or nickel oxyhydroxide having a specified component is prepared at a temperature of 600 to 1100° C., under air atmosphere. (b) Fired powders are prepared after mixing said nickel oxide and a lithium compound, and then by firing at a maximal temperature range of 650 to 850° C., under oxygen atmosphere. (c) Obtained fired powders are washed with water within a time satisfying the following equation (2) and then filtered and dried. A≦B/40   (2) wherein, A represents washing time represented by unit of minute; and B represents slurry concentration represented by unit of g/L).

    摘要翻译： 本发明提供一种非水电解质型二次电池用正极活性物质，由具有高容量，低成本，优异的热稳定性的锂/镍复合氧化物构成，其工业上合适的制造方法，高安全性 非水电解质二次电池。 通过以下步骤（a）至（c）制备锂/镍复合氧化物：（a）在空气气氛下，在600〜1100℃的温度下制备具有规定成分的氢氧化镍或氢氧化正镍。 （b）在氧化镍和锂化合物混合之后，然后在氧气氛下在最高温度范围650〜850℃下进行烧成，制备烧成粉末。 （c）获得的发泡粉末在满足下述式（2）的时间内用水洗涤，然后过滤并干燥。 A＆nlE; B / 40（2）其中，A表示以分钟为单位表示的洗涤时间; B表示以g / L为单位表示的浆料浓度）。

    SPRINKLER HEAD
    93.
    发明申请
    SPRINKLER HEAD 有权
    喷头

    公开(公告)号：US20110247836A1

    公开(公告)日：2011-10-13

    申请号：US13119481

    申请日：2008-09-30

    申请人： Takashi Takeuchi

    发明人： Takashi Takeuchi

    IPC分类号： A62C37/08

    CPC分类号： A62C37/12

    摘要： To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.

    摘要翻译： 提供一种洒水头，其特征在于，具备喷淋头主体，其内部具有喷嘴，与喷水管连接，安装在天花板上; 隐藏喷头主体的盖板; 保持器，其设置成使得盖板位于天花板表面下方并且能够在发生火灾时释放盖板; 以及安装在喷头主体上并且保持器可拆卸地连接到其上的圆柱形构件，并且具有能够在安装喷洒头时可以节省移除和重新附着保护盖的麻烦的结构。 喷洒头具有这样一种结构，使得安装在喷洒头上的保护盖安装在喷头主体的外周。

    Epitaxial wafer for semiconductor light emitting diode and semiconductor light emitting diode using same
    94.
    发明授权
    Epitaxial wafer for semiconductor light emitting diode and semiconductor light emitting diode using same 有权
    用于半导体发光二极管的外延晶片和使用其的半导体发光二极管

    公开(公告)号：US07884387B2

    公开(公告)日：2011-02-08

    申请号：US12134271

    申请日：2008-06-06

    申请人： Takashi Takeuchi ,  Toshimitsu Sukegawa

    发明人： Takashi Takeuchi ,  Toshimitsu Sukegawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  B82Y20/00 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/34326

    摘要： An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

    摘要翻译： 根据本发明的用于半导体发光器件的外延晶片，其中至少形成有由AlGaInP材料，有源层，p型Mg掺杂包覆层和 p型接触层依次层叠在n型GaAs衬底上，p型接触层形成为Mg掺杂接触层和Zn掺杂接触层堆叠的至少两层 从n型GaAs衬底观察时，其包括插入在p型Mg掺杂包覆层和p型接触层之间的Zn掺杂层。

    Packet communicating apparatus
    95.
    发明授权
    Packet communicating apparatus 失效
    分组通信装置

    公开(公告)号：US07843909B2

    公开(公告)日：2010-11-30

    申请号：US12216965

    申请日：2008-07-14

    申请人： Takashi Takeuchi ,  Koji Wakayama

    发明人： Takashi Takeuchi ,  Koji Wakayama

    IPC分类号： H04L12/50

    CPC分类号： H04L12/2801 ,  H04L47/15 ,  H04L47/70 ,  H04L47/788 ,  H04L47/808

    摘要： Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.

    摘要翻译： 实现了PON内ONU下的用户带宽控制。 BAS设置在用户授权期间在OLT中获得的用户带宽信息。 OLT使用从BAS设置的带宽信息，在用户的基础上实现带宽控制。 本发明使得能够对ONU之下的用户进行带宽控制。

    PUNCTURE ADAPTOR, ULTRASONIC PROBE FOR PUNCTURE, ULTRASONIC DIAGNOSTIC APPARATUS FOR PUNCTURE, METHOD FOR DETECTING ANGLE OF PUNCTURE NEEDLE
    96.
    发明申请
    PUNCTURE ADAPTOR, ULTRASONIC PROBE FOR PUNCTURE, ULTRASONIC DIAGNOSTIC APPARATUS FOR PUNCTURE, METHOD FOR DETECTING ANGLE OF PUNCTURE NEEDLE 有权
    针刺矫正器，超声波探针，超声波诊断装置，检测针孔角度的方法

    公开(公告)号：US20100228131A1

    公开(公告)日：2010-09-09

    申请号：US12572890

    申请日：2009-10-02

    申请人： Yutaka OONUKI ,  Hiroyuki Shikata ,  Takashi Takeuchi

    发明人： Yutaka OONUKI ,  Hiroyuki Shikata ,  Takashi Takeuchi

    IPC分类号： A61B8/00

    CPC分类号： A61B8/0833 ,  A61B8/0841 ,  A61B8/4455 ,  A61B17/3403 ,  A61B2017/3413 ,  A61B2090/067 ,  A61B2090/0811

    摘要： An ultrasound diagnostic apparatus including an ultrasonic probe transmitting and receiving ultrasound toward and from a subject, a puncture adaptor configured to be fixed to the ultrasonic probe and to hold a puncture needle, wherein the puncture adaptor has moving part movable in relation to the ultrasonic probe with the puncture needle, and a sensor provided at the ultrasonic probe, and configured to detect the position of the moving part.As the puncture needle is moved relative to the probe, the movable part is correspondingly moved relative to the probe, and movement of the movable part, and therefore also of the puncture needle, is detected by the sensor.

    摘要翻译： 一种超声波诊断装置，包括：超声波探头，其对被检体进行超声波收发;穿刺适配器，被配置为固定在所述超声波探头上并保持穿刺针，其中，所述穿刺适配器具有可移动相对于所述超声波探头 以及设置在所述超声波探头上的传感器，并且被配置为检测所述移动部件的位置。 当穿刺针相对于探针移动时，可移动部分相对于探针相应地移动，并且传感器检测可动部分以及因此也可以是穿刺针的移动。

    Light-emitting device epitaxial wafer and light-emitting device
    97.
    发明申请
    Light-emitting device epitaxial wafer and light-emitting device 有权
    发光元件外延片和发光元件

    公开(公告)号：US20100224855A1

    公开(公告)日：2010-09-09

    申请号：US12656674

    申请日：2010-02-12

    申请人： Takashi Takeuchi ,  Taichiroo Konnno

    发明人： Takashi Takeuchi ,  Taichiroo Konnno

    IPC分类号： H01L33/00

    CPC分类号： H01L33/325 ,  H01L33/025

    摘要： A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.

    摘要翻译： 发光器件外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，包括堆叠在n型覆层上的量子阱结构的发光层和p型 型覆盖层堆叠在发光层上。 n型包覆层包括掺杂有2种以上的包含Si的n型掺杂剂的混合物的外延层，并且厚度不小于250nm且不大于750nm。 或者，发光装置外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，堆叠在n型覆层上的发光层和p型覆层 层叠在发光层上。 n型包覆层包含2种以上含有Si的n型杂质。

    ULTRASONIC PROBE, ULTRASONIC DIAGNOSIS APPARATUS, AND ULTRASONIC PROBE MANUFACTURING METHOD
    98.
    发明申请
    ULTRASONIC PROBE, ULTRASONIC DIAGNOSIS APPARATUS, AND ULTRASONIC PROBE MANUFACTURING METHOD 有权
    超声探头，超声波诊断装置及超声探头制造方法

    公开(公告)号：US20090134746A1

    公开(公告)日：2009-05-28

    申请号：US12274689

    申请日：2008-11-20

    申请人： Hiroyuki Shikata ,  Takashi Takeuchi

    发明人： Hiroyuki Shikata ,  Takashi Takeuchi

    IPC分类号： H01L41/00 ,  H04R31/00

    CPC分类号： B06B1/0629 ,  G10K11/02 ,  Y10T29/49005

    摘要： A plurality of piezoelectric elements are arrayed two-dimensionally. A plurality of electrodes are respectively formed on the plurality of piezoelectric elements. A plurality of non-conductive members have columnar shape and are arranged on the plurality of electrodes. A plurality of internal metal layers are respectively provided for the plurality of non-conductive members. The internal metal layers reach from arrangement surfaces of the non-conductive members to other surfaces of the non-conductive members. The arrangement surfaces are opposite to the other surfaces.

    摘要翻译： 多个压电元件二维排列。 多个电极分别形成在多个压电元件上。 多个非导电构件具有柱状并且布置在多个电极上。 分别为多个非导电构件设置多个内部金属层。 内部金属层从不导电构件的布置表面到达非导电构件的其它表面。 排列表面与其它表面相对。