摘要:
According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.
摘要:
A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to one of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.
摘要:
A throttle passage is formed by providing a step portion by expanding an open end side of a refrigerant passage of the refrigeration cycle, placing a throttle passage member on the step portion, and squashing the throttle passage member using a columnar squashing jig to widen a rim of the outer periphery, thereby causing the throttle passage member to be fixedly engaged to an inner wall of the refrigerant passage. The throttle passage member has a simple shape formed only by machining a circular plate having a hole formed in a center thereof into a truncated conical shape, and therefore can be made at low cost. Throttle passage member is only squashed to be fixedly engaged in the refrigerant passage, and therefore can be easily formed.
摘要:
It is an object of the present invention to provide a water-based one-pack-type coating composition which can form a coating film having a satisfactory feel of achieving a soft feel and coating film performance simultaneously and further maintains common performance of paint such as excellent design (a matt appearance, etc.), an adhesion property, coating film strength, abrasion resistance, water resistance, oil and grease-contamination resistance. A water-based one-pack-type coating composition of the present invention comprises: an ionomer resin emulsion (A), a polyolefin resin emulsion (B), resin particles (C), and a urethane dispersion (D), wherein a solid content mass ratio (mass ratio as converted into a solid content) of (C)/{(A)+(B)+(D)} is 40/100 to 100/100, a solid content mass ratio of (A)/(B) is 1/3 to 3/1, and a solid content mass ratio of {(A)+(B)}/(D) is 40/60 to 70/30.
摘要:
A cold-cathode fluorescent lamp including a glass bulb and a pair of electrodes which are cylindrical and respectively inserted in two ends of the glass bulb. Two end portions of the glass bulb are substantially circular in transverse cross section, the two end portions respectively corresponding to the inserted pair of electrodes in length. At least part of a middle portion of the glass bulb is flat in transverse cross section, the middle portion corresponding to a space in the glass bulb between the pair of electrodes.
摘要:
A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.
摘要:
An exhaust gas purifying filter is made of a ceramic material in a honeycomb structure having introduction passages for introducing exhaust gas that includes particulate matter emitted from an internal combustion engine, porous walls that collect the particulate matter and exhaust passages for exhausting the exhaust gas after the particulate matter has been removed therefrom, with the porous walls supporting a catalyst for oxidizing and removing the particulate matter. The porosity of the porous wall is in a range from 55 to 80%, the mean pore size is in-a range from 30 to 50 μm, and the total volume X of the pores included in the exhaust gas purifying filter and the volume Y of the pores that are not smaller than 100 μm satisfy the relation of inequality Y/X≦0.05.
摘要翻译:废气净化过滤器由陶瓷材料制成,蜂窝结构体具有用于引入废气的引入通道,所述引入通道包括从内燃机排出的颗粒物质,收集颗粒物质的多孔壁和排出废气的废气通道 已经从其中除去颗粒物质,多孔壁支撑用于氧化和除去颗粒物质的催化剂。 多孔壁的孔隙率在55〜80%的范围内,平均孔径在30〜50μm的范围内,排气净化过滤器中所含的孔的体积X和体积Y 的不小于100μm的孔满足不等式Y / X <= 0.05的关系。
摘要:
A low-pressure discharge lamp (1) is provided that includes a glass tube (2) having an inner diameter in a range of 1 to 5 mm and a pair of electrodes (3) disposed at end portions in the glass tube (2). The pair of electrodes (3) contain at least one transition metal selected from transition metals of Groups IV to VI. Mercury and a rare gas containing argon and neon are sealed in an inner portion of the glass tube (2). A relationship between a cathode glow discharge density J and a composition index α of the sealed rare gas of the low-pressure discharge lamp (1) satisfies the following expression α≦J=I/(S·P2)≦1.5α (where S represents an effective discharge surface area (mm2) of an electrode, I represents a RMS lamp current (mA), P represents a pressure (kPa) of a sealed rare gas, and α represents a composition index of a sealed rare gas that is a constant expressed by α=(90.5A+3.4N)×10−3 when a total of a composition ratio A of argon and a composition ratio N of neon is expressed by A+N=1). Thus, sputtering of a small-sized electrode is suppressed thereby to suppress consumption of a rare gas sealed in a lamp so as to increase a life time, and a decrease of an emitted luminous flux is prevented.
摘要:
An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要:
A coke-oven repairing apparatus comprising: a traveling carriage 3 which travels in the direction of coke oven battery with the carriage straddled on the rails placed on the top of a coke oven; a traversing carriage4 provided on said traveling carriage 3, which moves in the direction orthogonal to the direction of coke oven battery; and a working device 5 for making repairs on the oven walls within the coke oven which is mounted on said traversing carriage 4, wherein the working device 5 includes: a guide post 31 which stands on the traversing carriage 4, and is also coupled, at its lower end portion, to a supporting portion provided on the traversing carriage through a pivot shaft 42; a lance 32 which ascends or descends along the guide post 31; and a derricking device 45 which tilts the guide post 31 between a forward-tilted posture and a backward-tilted posture using the pivot shaft 42 as the fulcrum to oscillate the lance 32 inserted in a coke-oven carbonizing chamber through a charging-hole, within the carbonizing chamber.