公开(公告)号：US08351164B2

公开(公告)日：2013-01-08

申请号：US13454846

申请日：2012-04-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39 ,  G11C11/16

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

公开(公告)号：US08256095B2

公开(公告)日：2012-09-04

申请号：US12871593

申请日：2010-08-30

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/39 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An example method for manufacturing a magneto-resistance effect element includes forming a free magnetization layer and forming a spacer layer. The spacer layer is formed, for example, by forming a non-magnetic first metallic layer and forming a second metallic layer on a surface of the non-magnetic first metallic layer. A first irradiating process includes irradiating, onto the second metallic layer, first ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr, so as to convert the second metallic layer into an insulating layer and to form a non-magnetic metallic path penetrating through the insulating layer and containing elements of the non-magnetic first metallic layer. A second irradiating process includes irradiating second ions or plasma onto the insulating layer. A non-magnetic third metallic layer is formed on the non-magnetic metallic path.

摘要翻译： 用于制造磁阻效应元件的示例性方法包括形成自由磁化层并形成间隔层。 间隔层例如通过形成非磁性第一金属层而在非磁性第一金属层的表面上形成第二金属层而形成。 第一照射方法包括向第二金属层照射包含氧和氮中的至少一种的第一离子或等离子体以及选自Ar，Xe，He，Ne，Kr中的至少一种，以便将 第二金属层形成绝缘层，并且形成穿过绝缘层并且包含非磁性第一金属层的元件的非磁性金属路径。 第二照射工艺包括将第二离子或等离子体照射到绝缘层上。 非磁性金属层形成在非磁性金属路径上。

公开(公告)号：US08213130B1

公开(公告)日：2012-07-03

申请号：US13234356

申请日：2011-09-16

申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3983 ,  G11B2005/3996 ,  G11C11/161

摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.

摘要翻译： 磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。 氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间， 或在第二磁性层内，或在第二磁性层和第二电极之间。 氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。 金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。

公开(公告)号：US08208229B2

公开(公告)日：2012-06-26

申请号：US13243553

申请日：2011-09-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.

摘要翻译： 一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层 层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自 由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。

公开(公告)号：US20120050920A1

公开(公告)日：2012-03-01

申请号：US13186389

申请日：2011-07-19

申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC分类号： H01F1/04 ,  G11B5/48

CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

公开(公告)号：US07948717B2

公开(公告)日：2011-05-24

申请号：US11898079

申请日：2007-09-07

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/0002 ,  G11C11/16 ,  H01L43/08 ,  Y10T428/1107

摘要： A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of the first magnetic layer, the second magnetic layer and the intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

摘要翻译： 磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 中间层，设置在第一磁性层和第二磁性层之间; 以及一对电极，用于垂直于由第一磁性层，第二磁性层和中间层构成的所得叠层体的膜表面流动电流。 中间层包括绝缘部分和含有选自Fe，Co，Ni，Cr中的至少一种的金属部分，金属部分与第一磁性层和第二磁性层接触。

公开(公告)号：US20080239542A1

公开(公告)日：2008-10-02

申请号：US12076440

申请日：2008-03-18

申请人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

发明人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC分类号： G11B5/02

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

摘要： A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

摘要翻译： 磁记录头包括：含有铁磁层的主磁极; 主磁极固定部，其包含与所述主磁极的至少一个侧面接触的反铁磁层; 用于加热至少主磁极的加热器，使得能够减小主磁极和主磁极固定部之间的磁相互作用; 以及用于产生磁场以引导主磁极在一个方向上的磁化的磁场发生器。

公开(公告)号：US20080102315A1

公开(公告)日：2008-05-01

申请号：US11822545

申请日：2007-07-06

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC分类号： G11B5/39 ,  B05D5/12 ,  H05H1/00

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121

摘要： In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portion of the insulating layer; and performing a second conversion treatment so as to convert the third metallic layer into the other portion of the insulating and to form the other portion of the metallic layer penetrating through the insulating layer.

摘要翻译： 在制造磁阻效应元件的方法中，该磁阻效应元件的磁化强度基本上沿一个方向固定，其中磁化按照外部磁场旋转的自由磁化层和间隔层， 位于固定磁化层和自由磁化层之间，绝缘层和穿过绝缘层的金属层位于隔离层之间，形成第一金属层; 在第一金属层上形成第二金属层，以转化成绝缘层的一部分; 进行第一转换处理，以将第二金属层转换成绝缘层的部分，并形成贯穿绝缘层的金属层的一部分; 在绝缘层和通过第一转换处理形成的金属层上形成将被转换成绝缘层的另一部分的第三金属层; 并进行第二转换处理，以将第三金属层转换成绝缘体的另一部分，并形成贯穿绝缘层的金属层的另一部分。

公开(公告)号：US08760154B2

公开(公告)日：2014-06-24

申请号：US13110392

申请日：2011-05-18

申请人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

发明人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

IPC分类号： G01B7/24 ,  G01L1/00

CPC分类号： A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

公开(公告)号：US20130255393A1

公开(公告)日：2013-10-03

申请号：US13730016

申请日：2012-12-28

申请人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

发明人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC分类号： G01L1/12

CPC分类号： G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.