公开(公告)号：US20130255393A1

公开(公告)日：2013-10-03

申请号：US13730016

申请日：2012-12-28

申请人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

发明人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC分类号： G01L1/12

CPC分类号： G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

公开(公告)号：US08973446B2

公开(公告)日：2015-03-10

申请号：US13730016

申请日：2012-12-28

申请人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

发明人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC分类号： G01B7/16 ,  G01L9/00 ,  G01L9/16 ,  G01L1/12

CPC分类号： G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

摘要翻译： 根据一个实施例，压力传感器包括基座和第一传感器单元。 第一传感器单元包括第一换能器薄膜，第一应变感测装置和第二应变感测装置。 第一应变感测装置包括第一磁性层，第二磁性层和设置在第一和第二磁性层之间的第一中间层。 第二应变感测装置与第一膜表面上的第一应变感测装置分开设置，并且设置在与重心的位置不同的位置处，第二应变感测装置包括第三磁性层，第四磁性层和 第二中间层设置在第三和第四磁性层之间，第一和第二中间层是非磁性的。 第一和第二应变感测装置和重心处于直线。

公开(公告)号：US08824108B2

公开(公告)日：2014-09-02

申请号：US13728281

申请日：2012-12-27

申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39 ,  G11C11/16 ,  G11B5/127 ,  G01R33/09 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC分类号： G11B5/1274 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

摘要翻译： 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。

公开(公告)号：US08685491B2

公开(公告)日：2014-04-01

申请号：US13186389

申请日：2011-07-19

申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC分类号： G11B5/48

CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

公开(公告)号：US08649127B2

公开(公告)日：2014-02-11

申请号：US13240062

申请日：2011-09-22

申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3929 ,  G11B5/3983 ,  G11B2005/3996

摘要： According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.

摘要翻译： 根据一个实施例，磁阻效应装置包括层叠体，用于在层叠体的层叠方向上提供电流的一对电极。 层叠体包括设置在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 第一磁性层，第二磁性层和间隔层中的至少一个包括由金属氧化物形成的氧化物层。 金属氧化物的晶体结构是NaCl结构。

公开(公告)号：US20120229936A1

公开(公告)日：2012-09-13

申请号：US13481317

申请日：2012-05-25

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

IPC分类号： G11B5/39 ,  H01L29/82

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

公开(公告)号：US20120079887A1

公开(公告)日：2012-04-05

申请号：US13110392

申请日：2011-05-18

申请人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

发明人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

IPC分类号： G01B7/16

CPC分类号： A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

公开(公告)号：US20100091412A1

公开(公告)日：2010-04-15

申请号：US12585852

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/33 ,  B05D5/12 ,  C23C16/513 ,  H05H1/24

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  C23C8/36 ,  C23C14/081 ,  C23C14/5833 ,  C23C14/5873 ,  G11B5/3163 ,  G11B2005/3996

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氦离子，氦等离子体，氦原子，氖离子，氖等离子体和氖自由基中的至少一种的气体进行第一处理的第二处理。

公开(公告)号：US09032808B2

公开(公告)日：2015-05-19

申请号：US13246069

申请日：2011-09-27

申请人： Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

发明人： Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

IPC分类号： G01L1/22 ,  G11B5/127 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  H01F10/30 ,  A61B5/021 ,  A61B5/022 ,  H01F10/32

CPC分类号： G01R33/091 ,  A61B5/02108 ,  A61B5/022 ,  A61B2562/0247 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/399 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01L43/08

摘要： According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻效应装置包括堆叠在基板上的堆叠体，将一个电流馈送到堆叠体的一对第一电极，应变引入部件和用于向该应变施加电压的第二电极 介绍会员。 层叠体包括：第一磁性层，其包含选自铁，钴和镍的一种或多种金属，堆叠在第一磁性层上的具有与第一磁性层不同的组成的第二磁性层， 以及设置在第一磁性层和第二磁性层之间的间隔层。

公开(公告)号：US08228643B2

公开(公告)日：2012-07-24

申请号：US12585854

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氮离子，氮原子，氮等离子体和氮自由基中的至少一种的气体进行第一次处理的膜的第二处理。