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    IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS
    93.
    发明申请
    IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS 有权

    公开(公告)号：US20160301002A1

    公开(公告)日：2016-10-13

    申请号：US15183421

    申请日：2016-06-15

    Applicant: International Business Machines Corporation

    Inventor： Guohan Hu ,  Daniel C. Worledge

    IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

    Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

    IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS
    95.
    发明申请
    IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS 有权

    公开(公告)号：US20160190435A1

    公开(公告)日：2016-06-30

    申请号：US14585435

    申请日：2014-12-30

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Guohan Hu ,  Daniel C. Worledge

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

    Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

    THERMALLY ASSISTED MRAM WITH INCREASED BREAKDOWN VOLTAGE USING A DOUBLE TUNNEL BARRIER
    97.
    发明申请
    THERMALLY ASSISTED MRAM WITH INCREASED BREAKDOWN VOLTAGE USING A DOUBLE TUNNEL BARRIER 有权
    使用双重隧道式障碍物，增加了断电电压的MRAM

    公开(公告)号：US20150270478A1

    公开(公告)日：2015-09-24

    申请号：US14217999

    申请日：2014-03-18

    Applicant: International Business Machines Corporation

    Inventor： Anthony J. Annunziata ,  Philip L. Trouilloud ,  Daniel C. Worledge

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

    Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.

    Abstract translation: 提供了一种用于热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 非磁性加热结构由设置在缓冲层上的阻挡种子层形成。 在阻挡种子层上设置非磁性隧道势垒。 阻挡层层设置在非磁性隧道屏障上。 顶部缓冲层设置在阻挡层上。 反铁磁层设置在非磁性加热结构的顶部缓冲层上。 磁性隧道结设置在反铁磁层上。 磁性隧道结包括设置在反铁磁层上的铁磁存储层，设置在铁磁存储层上的非磁性有源隧道势垒，以及设置在非磁性主动隧道势垒上的铁磁感应层。

    Spin transfer torque cell for magnetic random access memory
    98.
    发明授权
    Spin transfer torque cell for magnetic random access memory 有权

    公开(公告)号：US09082963B2

    公开(公告)日：2015-07-14

    申请号：US14556967

    申请日：2014-12-01

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Michael C. Gaidis ,  Janusz J. Nowak ,  Daniel C. Worledge

    IPC: H01L21/00 ,  H01L29/82 ,  H01L43/12

    CPC classification number: H01L43/12 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

    Abstract: Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.

    Thermal spin torque transfer magnetoresistive random access memory
    99.
    发明授权
    Thermal spin torque transfer magnetoresistive random access memory 有权
    热自旋转矩传递磁阻随机存取存储器

    公开(公告)号：US08947917B2

    公开(公告)日：2015-02-03

    申请号：US13969326

    申请日：2013-08-16

    Applicant: International Business Machines Corporation

    Inventor： Daniel C. Worledge ,  Guohan Hu

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.

    Abstract translation: 热自旋转矩传递磁阻随机存取存储器（MRAM）装置包括磁隧道结和隧道结编程电路。 磁隧道结包括具有固定磁极性的参考层，隧道势垒层和与参考层相对的隧道势垒层相对侧的自由层。 自由层包括具有第一居里温度的第一层和具有不同于第一居里温度的第二居里温度的第二层。 隧道结编程电路被配置为施加电流通过磁性隧道结以在磁性隧道结中产生写入温度并写入磁性隧道结的自由层。

    Thermal spin torqure transfer magnetoresistive random access memory
    100.
    发明授权
    Thermal spin torqure transfer magnetoresistive random access memory 有权
    热旋转转矩磁阻随机存取存储器

    公开(公告)号：US08947915B2

    公开(公告)日：2015-02-03

    申请号：US13717079

    申请日：2012-12-17

    Applicant: International Business Machines Corporation

    Inventor： Daniel C. Worledge ,  Guohan Hu

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.

    Abstract translation: 热自旋转矩传递磁阻随机存取存储器（MRAM）装置包括磁隧道结和隧道结编程电路。 磁隧道结包括具有固定磁极性的参考层，隧道势垒层和与参考层相对的隧道势垒层相对侧的自由层。 自由层包括具有第一居里温度的第一层和具有不同于第一居里温度的第二居里温度的第二层。 隧道结编程电路被配置为施加电流通过磁性隧道结以在磁性隧道结中产生写入温度并写入磁性隧道结的自由层。

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