公开(公告)号：US20220278137A1

公开(公告)日：2022-09-01

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20210405411A1

公开(公告)日：2021-12-30

申请号：US17471881

申请日：2021-09-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20210066351A1

公开(公告)日：2021-03-04

申请号：US16986462

申请日：2020-08-06

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20190129227A1

公开(公告)日：2019-05-02

申请号：US16153861

申请日：2018-10-08

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Isao SUZUMURA ,  Hajime WATAKABE

IPC: G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  H01L27/12 ,  G09F9/30 ,  H05K1/18

Abstract: The purpose of the invention is to realize the flexible display device of high reliability; specifically in a structure that a bending area is in a terminal area, and in that disconnection of the wiring does not occur in the bending area. The concrete structure is that: a display device having a display area, a driving circuit area and a bending area comprising: a first thin film transistor and a first interlayer insulating film are formed in the display area, a second thin film transistor and a second interlayer insulating film are formed in the driving circuit area, terminal wirings to connects the display area and the driving circuit area are formed in the bending area.

公开(公告)号：US20180122835A1

公开(公告)日：2018-05-03

申请号：US15723300

申请日：2017-10-03

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L21/311 ,  H01L21/473 ,  H01L21/4757

CPC classification number: G02F1/1368 ,  G02F2001/13685 ,  H01L21/473 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20170162715A1

公开(公告)日：2017-06-08

申请号：US15371897

申请日：2016-12-07

Applicant: Japan Display Inc.

Inventor： Takashi OKADA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Akihiro HANADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.

公开(公告)号：US20150170605A1

公开(公告)日：2015-06-18

申请号：US14633997

申请日：2015-02-27

Applicant: JAPAN DISPLAY INC.

Inventor： Hajime WATAKABE ,  Arichika ISHIDA ,  Masato HIRAMATSU

IPC: G09G5/02 ,  G09G3/36

CPC classification number: G09G5/02 ,  G02F1/133514 ,  G02F1/136209 ,  G02F2001/133521 ,  G02F2001/136222 ,  G02F2201/346 ,  G02F2202/104 ,  G09G3/3607

Abstract: According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

Abstract translation: 根据一个实施例，液晶显示装置包括阵列基板，该阵列基板包括被配置为透射第一波长范围的光的第一滤色器，配置成透射比第一波长范围更大波长的第二波长范围的光的第二滤色器 设置在第二滤色器上方的第一开关元件，设置在第二滤色器上方的第二开关元件，与第一开关元件电连接并位于第一滤色器上方的第一像素电极，以及第二像素电极 其电连接到第二开关元件并且位于第二滤色器的上方。