公开(公告)号：US20200350341A1

公开(公告)日：2020-11-05

申请号：US16931454

申请日：2020-07-17

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Yohei YAMAGUCHI ,  Hirokazu WATANABE ,  Isao SUZUMURA

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

公开(公告)号：US20190250443A1

公开(公告)日：2019-08-15

申请号：US16395491

申请日：2019-04-26

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC: G02F1/1368 ,  H01L27/12 ,  H01L51/50 ,  H01L21/8234 ,  H01L29/786

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US20180331128A1

公开(公告)日：2018-11-15

申请号：US16041259

申请日：2018-07-20

Applicant: Japan Display Inc.

Inventor： Yuichiro HANYU ,  Hirokazu WATANABE

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/05

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

公开(公告)号：US20190244979A1

公开(公告)日：2019-08-08

申请号：US15929125

申请日：2019-04-18

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Yohei YAMAGUCHI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Hirokazu WATANABE ,  Marina SHIOKAWA

IPC: H01L27/12 ,  H01L29/49 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4763 ,  H01L21/465

CPC classification number: H01L27/1225 ,  G02F1/133305 ,  G02F1/13452 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/10 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A display device to improve reliability of the TFT of the oxide semiconductor, including: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

公开(公告)号：US20170358610A1

公开(公告)日：2017-12-14

申请号：US15620997

申请日：2017-06-13

Applicant: Japan Display Inc.

Inventor： Yuichiro HANYU ,  Hirokazu WATANABE

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1251 ,  H01L29/7869 ,  H01L51/0529

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

公开(公告)号：US20180122835A1

公开(公告)日：2018-05-03

申请号：US15723300

申请日：2017-10-03

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Hirokazu WATANABE ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L21/311 ,  H01L21/473 ,  H01L21/4757

CPC classification number: G02F1/1368 ,  G02F2001/13685 ,  H01L21/473 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.