公开(公告)号：US07220681B2

公开(公告)日：2007-05-22

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode; wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 一种半导体器件，包括选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅电极下方的沟道区的两侧上的源极区和漏极区; 其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度不大于5×10 22原子/ cm 3。

公开(公告)号：US20070062802A1

公开(公告)日：2007-03-22

申请号：US11516773

申请日：2006-09-07

申请人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

发明人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

IPC分类号： H05F3/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C25B9/00

CPC分类号： H01J37/32183 ,  H01J37/32935

摘要： A system for managing a plasma processing apparatus includes an impedance matching tool for matching impedance in a transmission line feeding a high frequency wave generating a plasma into a processing chamber; a collection unit collecting time series data of an adjustment parameter of the impedance matching tool; a reference creation module creating management reference data by reference time series data of the adjustment parameter, the reference time series data collected from a reference plasma process against a reference substrate; an initialization module initializing the adjustment parameter for a target plasma process against a target substrate; a recording module recording target time series data of the adjustment parameter adjusted so as to minimize a reflection wave of the high frequency wave in the target plasma process; and a determination module determining an abnormality of the target plasma process by comparing the target time series data with the management reference data.

摘要翻译： 用于管理等离子体处理装置的系统包括阻抗匹配工具，用于将产生等离子体的高频波馈送到处理室的传输线中的阻抗匹配; 收集单元，收集阻抗匹配工具的调整参数的时间序列数据; 参考创建模块，通过调整参数的参考时间序列数据创建管理参考数据，从参考等离子体处理相对于参考基板收集的参考时间序列数据; 初始化模块将目标等离子体处理的调整参数初始化为目标衬底; 记录模块记录调整参数的目标时间序列数据，以便在目标等离子体处理中使高频波的反射波最小化; 以及确定模块，通过将目标时间序列数据与管理参考数据进行比较来确定目标等离子体处理的异常。

公开(公告)号：US20070034974A1

公开(公告)日：2007-02-15

申请号：US11585915

申请日：2006-10-25

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device comprises a semiconductor region including silicon, and an insulating film including silicon, oxygen, nitrogen, and helium, the dielectric film provided on the semiconductor region, and the dielectric film having a concentration distribution with respect to a film thickness direction, the concentration distribution having a maximal value of concentration of the helium in a surface portion on the semiconductor region side and a maximal value of concentration of the nitrogen in a surface portion on a side opposite to the semiconductor region.

摘要翻译： 半导体器件包括包括硅的半导体区域和包括硅，氧，氮和氦的绝缘膜，设置在半导体区域上的电介质膜和具有相对于膜厚度方向的浓度分布的电介质膜， 在半导体区域侧的表面部分具有氦浓度的最大值的浓度分布和与半导体区域相反的一侧的表面部分中的氮浓度的最大值。

公开(公告)号：US07129125B2

公开(公告)日：2006-10-31

申请号：US10785074

申请日：2004-02-25

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Ichiro Mizushima

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device comprises a semiconductor region including silicon, and an insulating film including silicon, oxygen, nitrogen, and helium, the dielectric film provided on the semiconductor region, and the dielectric film having a concentration distribution with respect to a film thickness direction, the concentration distribution having a maximal value of concentration of the helium in a surface portion on the semiconductor region side and a maximal value of concentration of the nitrogen in a surface portion on a side opposite to the semiconductor region.

摘要翻译： 半导体器件包括包括硅的半导体区域和包括硅，氧，氮和氦的绝缘膜，设置在半导体区域上的电介质膜和具有相对于膜厚度方向的浓度分布的电介质膜， 在半导体区域侧的表面部分具有氦浓度的最大值的浓度分布和与半导体区域相反的一侧的表面部分中的氮浓度的最大值。

公开(公告)号：US20060105582A1

公开(公告)日：2006-05-18

申请号：US11250439

申请日：2005-10-17

申请人： Nobutoshi Aoki ,  Koichi Kato ,  Katsuyuki Sekine ,  Ichiro Mizushima

发明人： Nobutoshi Aoki ,  Koichi Kato ,  Katsuyuki Sekine ,  Ichiro Mizushima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L29/513 ,  H01L29/518

摘要： A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.

摘要翻译： 提供了一种方法：在硅衬底的表面上排列氮原子; 在氢气氛中进行热处理，使得存在于硅衬底表面上的氮原子和硅原子处于三配位键状态; 并且在硅衬底上形成具有氮原子的三配位键状态并保持硅原子的氧化硅膜。

公开(公告)号：US20060094255A1

公开(公告)日：2006-05-04

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×10 22个原子/ cm 3。

公开(公告)号：US20060057746A1

公开(公告)日：2006-03-16

申请号：US10986408

申请日：2004-11-12

申请人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

发明人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

IPC分类号： H01L21/66

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31645

摘要： According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a film made of an insulating material on a surface of a semiconductor substrate; measuring a film thickness and/or composition of the film; setting nitriding conditions or oxidation conditions on the basis of the measurement result; and nitriding or oxidizing the film on the basis of the set nitriding conditions or oxidation conditions.

摘要翻译： 根据本发明，提供一种半导体器件制造方法，包括：在半导体衬底的表面上沉积由绝缘材料制成的膜; 测量膜的膜厚度和/或组成; 根据测量结果设定氮化条件或氧化条件; 并根据设定的氮化条件或氧化条件对膜进行氮化或氧化。

公开(公告)号：US20050170666A1

公开(公告)日：2005-08-04

申请号：US10999937

申请日：2004-12-01

申请人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L29/78 ,  H01L21/31 ,  H01L21/469 ,  H01L21/425 ,  H01L21/22

CPC分类号： H01L21/02321 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3143 ,  H01L21/31645 ,  H01L29/518

摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.

摘要翻译： 本文公开的半导体器件的制造方法包括：在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。

公开(公告)号：US4759055A

公开(公告)日：1988-07-19

申请号：US887890

申请日：1986-07-18

申请人： Senji Okumura ,  Katsuyuki Sekine ,  Ryuzo Sugiura

发明人： Senji Okumura ,  Katsuyuki Sekine ,  Ryuzo Sugiura

IPC分类号： H04M3/48 ,  H04M3/58 ,  H04M9/00

CPC分类号： H04M3/48 ,  H04M3/58 ,  H04M9/007

摘要： A key telephone system includes a plurality of key telephone sets having speakers and tone signal generators and communicating with each other through extension links. The key telephone system further includes a first memory, a second memory, a main CPU, a sub CPU, an MF signal generator, and a speech path switch. The first memory stores availability of the extension links. The main CPU discriminates whether all extension links are available according to the storage contents of the first memory in an extension call mode. The MF signal generator signals to a calling key telephone set that all the extension links are busy when the main CPU discriminates that all the extension links are busy. A second memory stores information on each calling and called key telephone set if the extension call is in a state where the MF signal generator signals that all the extension links are busy. The main and sub CPUs cooperate to perform call control of the called key telephone set using the tone signal generator and the speaker in the called key telephone set according to information stored in the first and second memories.

摘要翻译： 密钥电话系统包括具有扬声器和音频信号发生器的多个密钥电话机，并通过扩展链路相互通信。 密钥电话系统还包括第一存储器，第二存储器，主CPU，副CPU，MF信号发生器和语音路径开关。 第一个内存存储扩展链接的可用性。 主CPU根据扩展呼叫模式下的第一存储器的存储内容来判别所有扩展链路是否可用。 当主CPU判断所有扩展链路正忙时，MF信号发生器向主叫电话机发信号通知所有扩展链路都正忙。 如果扩展呼叫处于MF信号发生器指示所有扩展链路正忙的状态，则第二存储器存储关于每个呼叫和被叫的密钥电话机的信息。 主CPU和副CPU根据存储在第一和第二存储器中的信息，协调使用调用密钥电话机中的音调信号发生器和扬声器执行被叫电话机的呼叫控制。

公开(公告)号：US09105738B2

公开(公告)日：2015-08-11

申请号：US13616735

申请日：2012-09-14

申请人： Katsuyuki Sekine

发明人： Katsuyuki Sekine

IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/401 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7883

摘要： A semiconductor device includes a multilayered interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface portion of the element isolation insulating film, a second region along a sidewall portion of the charge storage layer, and a third region above an upper surface portion of the charge storage layer. The interelectrode insulating film includes a stack of first silicon oxide film, a silicon nitride film, and a second silicon oxide film. The silicon nitride film is relatively thicker in the third region compared to the first region and compared to at least a portion of the second region.

摘要翻译： 半导体器件包括在电荷存储层和控制电极层之间形成的多层电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面部分上方的第一区域中，沿着电荷存储层的侧壁部分的第二区域和电荷存储层的上表面部分上方的第三区域。 电极间绝缘膜包括第一氧化硅膜，氮化硅膜和第二氧化硅膜的堆叠。 与第一区域相比，氮化硅膜在第三区域中相对较厚，并与第二区域的至少一部分进行比较。