公开(公告)号：US5585199A

公开(公告)日：1996-12-17

申请号：US303014

申请日：1994-09-08

申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01F1/00 ,  G11B21/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3281 ,  G11B2005/3996 ,  G11B5/012 ,  H01F10/3295 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12535

摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.

摘要翻译： 公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。 该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。 高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。 该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。 在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。 此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2， 结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

公开(公告)号：US5549978A

公开(公告)日：1996-08-27

申请号：US144258

申请日：1993-11-01

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/66 ,  B32B9/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

摘要翻译： 本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜， 铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

公开(公告)号：US07593195B2

公开(公告)日：2009-09-22

申请号：US11609557

申请日：2006-12-12

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07301733B1

公开(公告)日：2007-11-27

申请号：US10400690

申请日：2003-03-28

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07130163B2

公开(公告)日：2006-10-31

申请号：US10958250

申请日：2004-10-06

申请人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121

摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

公开(公告)号：US06636399B2

公开(公告)日：2003-10-21

申请号：US09927364

申请日：2001-08-13

申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

IPC分类号： G11B5139

CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

公开(公告)号：US06455178B1

公开(公告)日：2002-09-24

申请号：US09471498

申请日：1999-12-23

申请人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： B32B1504

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/399 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/12861 ,  Y10T428/263

摘要： An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of IrxMn100−x, wherein x stands for a value by atomic % satisfying the expression, 2≦x≦80.

摘要翻译： 交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜，其中至少一部分反铁磁膜具有面心立方晶体结构，反铁磁膜包括由通式IrxMn100表示​​的IrMn合金 -x，其中x代表满足表达式2 <= x <= 80的原子％的值。

公开(公告)号：US5999378A

公开(公告)日：1999-12-07

申请号：US980871

申请日：1997-12-01

申请人： Kazuhiro Saito ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Kawashima ,  Taro Oike ,  Koichi Terunuma ,  Haruyuki Morita

发明人： Kazuhiro Saito ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Kawashima ,  Taro Oike ,  Koichi Terunuma ,  Haruyuki Morita

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.

摘要翻译： 磁阻效应头包括巨磁阻效应膜，一对向巨磁电阻效应头供电的引线，以及由结晶软磁膜制成的上下磁屏蔽层，并设置成保持巨磁阻效应膜 其间插入有磁隙膜，其中确定巨磁阻效应膜的下层的表面粗糙度，使得表面粗糙度的中心周期L满足L> 70nm。

公开(公告)号：US06369992B1

公开(公告)日：2002-04-09

申请号：US08909687

申请日：1997-08-12

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3977 ,  G11B2005/3996

摘要： A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.

摘要翻译： 磁阻效应头记录和再现记录的磁性材料。 磁阻效应头具有连接到一对引线的磁阻效应膜。 此外，具有第一和第二磁轭构件的磁轭将来自记录介质的信号磁场引导到磁阻效应膜。 磁阻效应头被构造成使得第一和第二磁轭构件具有面向记录介质的表面。 第一和第二磁轭构件的表面之间具有磁隙。 此外，磁阻效应膜从面向介质的表面凹陷预定距离。 此外，第一和第二磁轭构件几乎与从记录介质到第一磁轭构件，磁阻效应膜和第二磁轭构件的磁通流平行排列。

公开(公告)号：US06348274B1

公开(公告)日：2002-02-19

申请号：US09472144

申请日：1999-12-27

申请人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

发明人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

IPC分类号： G11B566

CPC分类号： H01F10/3263 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1171

摘要： A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.

摘要翻译： 磁阻元件包括它们之间的钉扎层，自由层和非磁性间隔膜。 被钉扎层由第一强磁性金属层，第一铁磁金属层上的第一非金属层，第一非金属层上的第二非金属层和第一非金属层的组成不同而构成，以及 第二非铁金属层上的第二铁磁金属层。 因此，可以用于磁记录装置的磁头中的磁阻元件确保了被钉扎膜的良好的偏置特性，同时保持了镜面自旋阀结构的大的MR变化率，同时在软的 磁性。