摘要:
A film forming process comprising introducing gas for forming a film from an inlet part for gas into a pressure-reducible deposition chamber wherein a substrate for forming a film thereon is supported by a fixing member, at least one of said substrate and fixing member are used so as to act as a first electrode, at least one portion of the wall of said deposition chamber is employed so as to act as a second electrode, the surface of said second electrode is arranged substantially in parallel to the surface for forming a film thereon, of said substrate, and said inlet part for gas and an outlet part for gas are arranged substantially in the positional relationship of rotation symmetry; and generating a glow discharge in said deposition chamber, thereby forming a film on said substrate.
摘要:
An automatic printing apparatus includes an image formation member for forming a master which may be repetitively subjected to the process of reproducing an original image, a rotatable drum capable of holding the image formation member thereon, an optical device for projecting therethrough the original image upon the image formation member on the rotatable drum, a heating member for heating the image formation member on the rotatable drum so as to form a chargeable image pattern corresponding to the image formed on the image formation member by the optical device, a charging device for forming an electrostatic image corresponding to the original image on the master formed by the optical device and the heating member, a developing device for developing the electrostatic image into a visible image, and a device for transferring the visible image from the master onto a recording medium.
摘要:
An image forming apparatus has acoustic transducers; and an image processing unit which calculates intensity of acoustic waves irradiated from regions inside a subject respectively by processing received signals, which are output from the acoustic transducers, by a Fourier-domain method. The image processing unit includes: a coefficient memory which stores coefficients computed in advance, the coefficient being a value determined only by a position of the acoustic transducer, position of the region and a time of receipt of the acoustic wave; a multiplier unit which multiplies the received signal of the acoustic transducer by the corresponding coefficient; and a voxel memory which accumulates multiplication results of the multiplier unit for each region.
摘要:
Provided are an ultrasonic probe capable of forming an image without degradation even when the frequency band of a photoacoustic wave and the frequency band of an ultrasonic wave used in ultrasonography are separated from each other, and an inspection object imaging apparatus including the ultrasonic probe. The ultrasonic probe includes a first array device capable of transmitting and receiving an ultrasonic wave; and a second array device capable of receiving a photoacoustic wave. The first array device includes plural electromechanical transducers arranged in a direction perpendicular to a scanning direction, the second array device includes plural electromechanical transducers arranged in a two-dimensional manner, and the first array device and the second array device are provided on the same plane and in the scanning direction.
摘要:
When a subject is pressed by a plate and an acoustic wave is received by a probe via the plate, the acoustic wave is refracted because of the difference between a sound velocity in the subject and a sound velocity in the plate. When the refraction is not considered, a reduction in resolution occurs. Weights for signals or virtual wavefronts corresponding to the signals to be added to one another are determined using a thickness of the plate, the sound velocity in the plate, the sound velocity in the subject, positions of image elements (pixels or voxels) for image information, and arrival times of the acoustic wave from an object that is a sound source. The signals or the virtual wavefronts corresponding to the signals are added to one another, thereby acquiring the image information.
摘要:
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
摘要:
An ultrasonic probe includes a light irradiating portion configured to radiate light for generating ultrasonic waves from a light absorber, an ultrasonic transducing portion configured to transduce the ultrasonic waves to an electric signal, and a light guide member configured to introduce light from a light source to the light irradiating portion. A light irradiating region of the light irradiating portion is included within an ultrasonic receiving region of the ultrasonic transducing portion.
摘要:
An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.
摘要:
A substrate for an organic EL display including an insulating layer, in which release of a substance derived from a material for the insulating layer by heating at a temperature equal to or lower than a temperature obtained by subtracting 20° C. from a decomposition temperature of the material for the insulating layer is detected by mass spectrometric detection at an S/N ratio smaller than 3/1.
摘要:
A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.