摘要:
There is provided a laser display device that is applicable to mobile equipment, which device prevents laser light from being applied to a region other than a screen. A laser display device (100) is provided with a laser projection part (101) comprising at least one coherent light source and an optical system for converting light from the coherent light source into video, a screen (103) onto which the light emitted from the laser projection part (101) is projected, and an arm (102) that is attached to the screen (103) and supports the laser projection part (101), and the movable range and movable direction of the laser projection part (101) are limited by the arm (102) so that light from the laser projection part (101) is applied to only the screen (103).
摘要:
According to the present invention, in a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side. According to this semiconductor laser device, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of transverse mode and reduction in gain which are caused by spatial hole burning.
摘要:
A laser light source (10) of the present invention is provided with plural semiconductor lasers (1), and a waveguide (3) in which light beams emitted from the respective semiconductor lasers (1) propagate, and the plural semiconductor lasers are disposed at an upper end of an incident end face (31) of the waveguide so that the light beams (4) emitted from the respective semiconductor lasers enter the waveguide from the end face (31) of the waveguide and are emitted from another end face (32) of the waveguide. Thereby, it is possible to realize a high-power and compact laser light source which is able to output a light beam having a uniform light intensity distribution.
摘要:
An optical information processing device is provided with a multi-wavelength light source that emits light of two or more different wavelengths, a filter portion that separates the light emitted from the multi-wavelength light source according to wavelength, and a condensing lens that focuses a plurality of lights separated by the filter portion on the same point for multi-wavelength recording.
摘要:
A holographic optical information playback apparatus for playing information that is recorded on a recording medium in a form of interference fringes is provided with a two-dimensional photoreceptor array which receives a two-dimensional array of light spots that is diffracted at the recording medium due to application of reference light onto the medium, and outputs a playback signal including information recorded on the recording medium. The two-dimensional photoreceptor array has a photoreceptor section in which plural photoreceptor cells for detecting the intensities of received lights are arranged so that a photoreceptive area corresponding to the light spot array is formed, and assigns plural photoreceptor cells are assigned to each light spot in the light spot array according to the irradiation position of the light spot array, whereby the light intensity of one light sport is detected using the output signals from the plural photoreceptor cells.
摘要:
A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
摘要:
A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
摘要:
An optical waveguide of the present invention includes: a nonlinear optical crystal; a first ion exchange region provided in the vicinity of a portion of a surface of the nonlinear optical crystal; and a second ion exchange region provided in the surface of the nonlinear optical crystal. The second ion exchange region covers a greater area of the surface than an area covered by the first ion exchange region. The second ion exchange region includes a region having an extent of 0.02 &mgr;m to 0.2 &mgr;m along a depth direction in which an ion exchange ratio varies along the depth direction.
摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect a highly reliable element is provided.
摘要:
A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.