-
公开(公告)号：US09805792B2
公开(公告)日：2017-10-31
申请号：US15084191
申请日：2016-03-29
发明人： Jun Liu
CPC分类号： G11C13/0069 , G11C13/003 , G11C13/004 , G11C2013/0073 , G11C2013/009 , G11C2213/72 , G11C2213/74
摘要： Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.
-
92.发明申请公开(公告)号：US20170256710A1
公开(公告)日：2017-09-07
申请号：US15462618
申请日：2017-03-17
发明人： Jun Liu , Kunal Parekh
CPC分类号： H01L45/06 , H01L27/2427 , H01L27/2463 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683 , H01L45/1691
摘要： In some embodiments, an integrated circuit includes narrow, vertically-extending pillars that fill openings formed in the integrated circuit. In some embodiments, the openings can contain phase change material to form a phase change memory cell. The openings occupied by the pillars can be defined using crossing lines of sacrificial material, e.g., spacers, that are formed on different vertical levels. The lines of material can be formed by deposition processes that allow the formation of very thin lines. Exposed material at the intersection of the lines is selectively removed to form the openings, which have dimensions determined by the widths of the lines. The openings can be filled, for example, with phase change material.
-
93.发明授权Memory elements using self-aligned phase change material layers and methods of manufacturing same 有权使用自对准相变材料层的存储元件及其制造方法公开(公告)号：US09595672B2
公开(公告)日：2017-03-14
申请号：US14881630
申请日：2015-10-13
发明人： Jun Liu
CPC分类号： H01L45/1691 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/1675
摘要： A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.
摘要翻译： 记忆元件及其形成方法。 存储元件包括在第一电介质材料中的通孔内的第一电极。 绝缘材料元件位于第一电极之上并与第一电极接触。 相变材料位于第一电极上方并与绝缘材料元件的侧壁接触。 相变材料具有与第一电极的表面和第一电介质材料的表面接触的第一表面。 第二电极与相变材料的与第一表面相对的第二表面接触。
-
94.发明授权Methods of forming memory device constructions, methods of forming memory cells, and methods of forming semiconductor constructions 有权形成存储器件结构的方法，形成存储单元的方法以及形成半导体结构的方法公开(公告)号：US09559301B2
公开(公告)日：2017-01-31
申请号：US15003606
申请日：2016-01-21
发明人： Jun Liu
IPC分类号： H01L45/00 , G11C13/00 , H01L27/102 , H01L27/24 , H01L29/872 , H01L29/66
CPC分类号： H01L45/1608 , G11C13/003 , G11C2213/72 , H01L27/1021 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/6609 , H01L29/872
摘要： Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode.
摘要翻译： 存储器件结构包括平行于第二列线延伸的第一列线，第一列线在第二列线之上; 在第二列线上方的行线，并垂直于第一列线和第二列线延伸; 存储器材料，其设置成选择性地和可逆地配置为两种或更多种不同电阻状态之一; 第一二极管，被配置为经由所述存储材料在所述第一列线和所述行线之间传导第一电流; 以及第二二极管，被配置为经由存储器材料在第二列线和行线之间传导第二电流。 在一些实施例中，第一二极管是具有半导体阳极和金属阴极的肖特基二极管，第二二极管是具有金属阳极和半导体阴极的肖特基二极管。
-
公开(公告)号：US09525131B2
公开(公告)日：2016-12-20
申请号：US14537670
申请日：2014-11-10
发明人： Jun Liu , Michael P. Violette
CPC分类号： H01L45/1273 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1675
摘要： Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
摘要翻译： 具有包含可变电阻材料的存储单元的存储器件包括包含单个纳米线的电极。 可以使用各种方法来形成这种存储器件，并且这样的方法可以包括建立单个纳米线的一端与存储器单元中的可变电阻材料体积之间的接触。 电子系统包括这样的存储器件。
-
公开(公告)号：US09472755B2
公开(公告)日：2016-10-18
申请号：US14617377
申请日：2015-02-09
发明人： Jun Liu , Michael P. Violette
CPC分类号： H01L45/1253 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/003 , G11C2213/72 , G11C2213/74 , G11C2213/76 , G11C2213/78 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.
-
97.发明申请公开(公告)号：US20160141495A1
公开(公告)日：2016-05-19
申请号：US15003606
申请日：2016-01-21
发明人： Jun Liu
CPC分类号： H01L45/1608 , G11C13/003 , G11C2213/72 , H01L27/1021 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L29/6609 , H01L29/872
摘要： Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode.
-
98.发明授权Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell 有权包括非易失性存储单元的集成电路和形成非易失性存储单元的方法公开(公告)号：US09245964B2
公开(公告)日：2016-01-26
申请号：US14525659
申请日：2014-10-28
发明人： Jun Liu , John K. Zahurak
CPC分类号： H01L45/1266 , H01L21/28114 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L27/2481 , H01L29/4236 , H01L29/42376 , H01L29/6656 , H01L29/66621 , H01L45/085 , H01L45/1233 , H01L45/124 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1691
摘要： An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed.
摘要翻译： 集成电路具有包括第一电极，第二电极和离子导电材料的非易失性存储单元。 第一和第二电极中的至少一个具有直接接受离子导电材料接受的电化学活性表面。 第二电极位于第一电极的正上方。 第一电极在第一方向上横向延伸，并且离子导电材料沿与第一方向不同并与第一方向相交的第二方向延伸。 仅在第一和第二方向相交的情况下，第一电极直接接收在离子导电材料上。 公开了包括方法实施例的其它实施例。
-
99.发明申请公开(公告)号：US20150380647A1
公开(公告)日：2015-12-31
申请号：US14844747
申请日：2015-09-03
发明人： Jun Liu , Michael P. Violette
CPC分类号： H01L45/1608 , G11C13/0004 , G11C2213/72 , H01L27/101 , H01L27/24 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/142 , H01L45/143 , H01L45/144
摘要： Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.
-
100.发明授权Memory elements using self-aligned phase change material layers and methods of manufacturing same 有权使用自对准相变材料层的存储元件及其制造方法公开(公告)号：US09178141B2
公开(公告)日：2015-11-03
申请号：US14149045
申请日：2014-01-07
发明人： Jun Liu
CPC分类号： H01L45/1691 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/1675
摘要： A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.
摘要翻译： 记忆元件及其形成方法。 存储元件包括在第一电介质材料中的通孔内的第一电极。 绝缘材料元件位于第一电极之上并与第一电极接触。 相变材料位于第一电极上并与绝缘材料元件的侧壁接触。 相变材料具有与第一电极的表面和第一电介质材料的表面接触的第一表面。 第二电极与相变材料的与第一表面相对的第二表面接触。
-
-
-
-
-
-
-
-
-
搜索结果
195 条记录 (耗时 0.033 秒)
