Etching method and apparatus
    91.
    发明授权
    Etching method and apparatus 有权
    蚀刻方法和装置

    公开(公告)号:US07514277B2

    公开(公告)日:2009-04-07

    申请号:US11224949

    申请日:2005-09-14

    IPC分类号: H01L21/302

    摘要: An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.

    摘要翻译: 提供了能够均匀地控制硬掩模层的膜厚的蚀刻方法。 通过使用含有例如CF4和Ar的蚀刻气体来进行等离子体蚀刻,同时在氮化硅膜的厚度被监视的同时蚀刻完成,当氮化硅膜的厚度达到预定值时 值。 然后,通过使用包含例如Cl 2,HBr和Ar的蚀刻气体,并且在监测沟槽的深度并且蚀刻完成时,使用氮化硅膜作为掩模,在硅衬底上进行等离子体蚀刻, 沟槽的深度达到规定值。

    Particle monitoring apparatus and vacuum processing apparatus
    92.
    发明授权
    Particle monitoring apparatus and vacuum processing apparatus 有权
    粒子监测装置和真空处理装置

    公开(公告)号:US07417732B2

    公开(公告)日:2008-08-26

    申请号:US11271945

    申请日:2005-11-14

    IPC分类号: G01N15/02

    摘要: A particle monitoring apparatus including a light source configured to emit plural light fluxes, a projecting optical system configured to convert the plural light fluxes into a band-shaped light flux, to lead the band-shaped light flux into a flow passage of a given gas stream, and to partially superpose the plural light fluxes to form a substantially uniform light intensity distribution of the band-shaped light flux in a widthwise direction; a light detector configured to detect intensity of light; and a particle detector configured to determine sizes of the particles passing the light flux based on intensities of the scattered lights detected by the light detector and to count the number of the particles.

    摘要翻译: 一种粒子监测装置,包括配置为发射多个光束的光源,投影光学系统,被配置为将多个光束转换成带状光束,以将带状光束引导到给定气体的流路中 并且部分地叠加多个光束以在宽度方向上形成带状光通量的基本上均匀的光强度分布; 光检测器,被配置为检测光的强度; 以及粒子检测器,被配置为基于由光检测器检测到的散射光的强度来确定通过光通量的粒子的尺寸,并对粒子的数量进行计数。

    Electrolyte material for polymer electrolyte fuel cells, electrolyte membrane and membrane/electrode assembly
    93.
    发明申请
    Electrolyte material for polymer electrolyte fuel cells, electrolyte membrane and membrane/electrode assembly 有权
    用于聚合物电解质燃料电池,电解质膜和膜/电极组件的电解质材料

    公开(公告)号:US20080138685A1

    公开(公告)日:2008-06-12

    申请号:US12010589

    申请日:2008-01-28

    IPC分类号: H01M8/10 C08J5/20

    摘要: To provide a polymer electrolyte material for polymer electrolyte fuel cells, which is an electrolyte material having a high ion exchange capacity and a low resistance, and which has a higher softening temperature than a conventional electrolyte material.An electrolyte material for polymer electrolyte fuel cells, which is made of a polymer containing repeating units based on a fluoromonomer having a radical polymerization reactivity, wherein the repeating units contain, in their side chains, a structure having ionic groups represented in the following formula (α) (provided that in the formula, each of Q1 and Q2 which are independent of each other, is a single bond or a perfluoroalkylene group that may have an etheric oxygen atom, provided that they are not single bonds at the same time, Rf1 is a perfluoroalkyl group which may have an etheric oxygen atom, and X is an oxygen atom, a nitrogen atom or a carbon atom, provided that when X is an oxygen atom, a=0, when X is a nitrogen atom, a=1, and when X is a carbon atom, a=2, and Y is a fluorine atom or a monovalent perfluoro organic group).

    摘要翻译: 本发明提供一种高分子电解质燃料电池用聚合物电解质材料,该高分子电解质材料是具有高离子交换能力和低电阻的电解质材料,其软化温度高于常规电解质材料。 一种用于聚合物电解质燃料电池的电解质材料,其由含有具有自由基聚合反应性的含氟单体的重复单元的聚合物制成,其中重复单元在其侧链中包含具有下式表示的离子基团的结构( α)(条件是在该式中,彼此独立的Q 1和Q 2各自是单键或可具有醚的全氟亚烷基 氧原子,条件是它们不是同时是单键,R f1是可以具有醚性氧原子的全氟烷基,X是氧原子,氮原子或碳原子 条件是当X是氧原子时,a = 0,当X为氮原子时a = 1,当X为碳原子时a = 2,Y为氟原子或1价全氟有机基团) 。

    Monitoring method of processing state and processing unit
    94.
    发明授权
    Monitoring method of processing state and processing unit 有权
    处理状态和处理单元的监控方法

    公开(公告)号:US07329549B2

    公开(公告)日:2008-02-12

    申请号:US10652852

    申请日:2003-09-02

    申请人: Susumu Saito

    发明人: Susumu Saito

    IPC分类号: H01L21/00

    CPC分类号: H01J37/32935 H01L21/31116

    摘要: The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively setting constant response variables for two states before and after a processing state changes, the response variables being different from each other; and a step of conducting a multiple regression analysis about the response variables in order to produce a model expression, predictor variables of the multiple regression analysis being a plurality of detected data from a plurality of detectors provided in the processing unit. Then, the method includes: a step of actually obtaining a plurality of detected data from the plurality of detectors when the predetermined process is conducted to the object to be processed; and a step of estimating or monitoring a processing state by applying the obtained plurality of detected data to the model expression.

    摘要翻译: 本发明是一种监视方法,当通过使用处理单元对预定处理进行处理时,监视待处理对象的处理状态的变化。 该方法包括:分别在处理状态改变之前和之后为两个状态设置常数响应变量的步骤,响应变量彼此不同; 以及进行关于所述响应变量的多元回归分析以产生模型表达式的步骤,所述多元回归分析的预测变量是来自处理单元中提供的多个检测器的多个检测数据。 然后,该方法包括:当对待处理对象进行预定处理时,从多个检测器中实际获取多个检测数据的步骤; 以及通过将所获得的多个检测数据应用于模型表达来估计或监视处理状态的步骤。

    Semiconductor laser array
    95.
    发明授权
    Semiconductor laser array 失效
    半导体激光阵列

    公开(公告)号:US06829265B2

    公开(公告)日:2004-12-07

    申请号:US10145022

    申请日:2002-05-15

    IPC分类号: H01S304

    摘要: The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for improving the subject is as follows. A semiconductor laser device comprises a semiconductor laser chip having a first electrode and a laser sustaining material, in which the laser sustaining material has electrodes and solder layers connected electrically therewith on the surface where the semiconductor laser chip is mounted, the first electrode of the semiconductor laser chip is connected with the solder layer of the laser sustaining material and at least the solder layer of the laser sustaining material extends from at least one end face in the longitudinal direction of an optical resonator of the semiconductor laser chip to the outside of the optical resonator.

    摘要翻译: 所公开的技术的主题是为了防止在半导体激光元件的组装过程中由焊接引起的多个电极之间的短路。 改进主题的宪法如下。 半导体激光器件包括具有第一电极和激光维持材料的半导体激光器芯片,其中激光维持材料具有在其上安装半导体激光器芯片的表面上与其电连接的电极和焊料层,半导体的第一电极 激光芯片与激光维持材料的焊料层连接,并且至少激光维持材料的焊料层从半导体激光器芯片的光学谐振器的纵向方向上的至少一个端面延伸到光学器件的外部 谐振器。

    Plasma processing apparatus
    96.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US06821377B2

    公开(公告)日:2004-11-23

    申请号:US10384520

    申请日:2003-03-11

    IPC分类号: H05H100

    摘要: A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.

    摘要翻译: 用于半导体晶片的等离子体蚀刻装置在基座和喷头之间的等离子体产生空间中产生等离子体。 屏蔽构件可拆卸地设置在处理室的侧壁内,以防止反应产物粘附到侧壁。 窗口装置被布置成将从等离子体发射的等离子体光引导出处理室。 窗户装置包括密封地附接到处理室的侧壁的石英窗板。 该窗装置还包括具有用于将等离子体光引导到窗板的多个毛细通孔的铝导光体和设置在窗板与光导之间并覆盖通孔的开口的蓝宝石盖板。 导光板和盖板安装在屏蔽部件上。

    Piezoelectric transformer element and method of manufacturing the same
    99.
    发明授权
    Piezoelectric transformer element and method of manufacturing the same 失效
    压电变压器元件及其制造方法

    公开(公告)号:US06140747A

    公开(公告)日:2000-10-31

    申请号:US209424

    申请日:1998-12-11

    CPC分类号: H01L41/107

    摘要: A piezoelectric transformer element includes a piezoelectric plate made of a ceramic material, and input and output electrodes formed on the piezoelectric plate, and outputs a voltage from the output electrode upon application of a voltage to the input electrode. A reinforcing layer is selectively disposed on that portion of the piezoelectric plate where tensile stress concentrates when the piezoelectric transformer element is driven. The reinforcing layer is made of a material having the same composition as that of the ceramic material forming the piezoelectric plate and a particle size, after sintering, smaller than that of the ceramic material. A method of manufacturing a piezoelectric transformer element includes the steps of selectively disposing a reinforcing layer made of a ceramic powder at a required portion of each of ceramic sheets that form a piezoelectric plate of the piezoelectric transformer element, and molding and sintering the ceramic sheets and the ceramic powder, thus fabricating the piezoelectric plate. The ceramic powder has the same composition as that of the ceramic sheets of the piezoelectric plate and a specific powder surface area larger than that of the piezoelectric plate.

    摘要翻译: 压电变压器元件包括由陶瓷材料制成的压电板,以及形成在压电板上的输入和输出电极,并且在向输入电极施加电压时从输出电极输出电压。 增压层选择性地设置在压电板的压电变压器元件驱动时拉伸应力集中的部分上。 加强层由与形成压电板的陶瓷材料相同组成的材料制成,烧结后的粒径小于陶瓷材料的粒径。 一种制造压电变压器元件的方法包括以下步骤:在形成压电变压器元件的压电板的每个陶瓷片的必需部分选择性地设置由陶瓷粉末制成的增强层,以及模制和烧结陶瓷片和 陶瓷粉末,从而制造压电板。 陶瓷粉末的组成与压电板的陶瓷片相同,粉末表面积比压电板大。

    End-point detector for plasma etcher
    100.
    发明授权
    End-point detector for plasma etcher 失效
    等离子体蚀刻机的终点检测器

    公开(公告)号:US6088096A

    公开(公告)日:2000-07-11

    申请号:US96524

    申请日:1998-06-12

    摘要: An end-point detector for a plasma etcher, includes a converging lens for receiving strip-like plasma light produced between a pair of opposed electrodes and a spectroscope, having a slit located at a substantial rear-side focal plane of the converging lens, for detecting an etching end time point from a time-based variation of spectrum light intensity of the plasma light which has been converged at the slit and has passed through the slit. The converging lens has a pupil diameter of not greater than ##EQU1## where W is a width of a short side of the strip-like plasma light produced between the electrodes, 1 is a distance between an end of each electrode and a pupil face of the converging lens, NAm is a numerical aperture required by the spectroscope, and h is a width of a short side of the slit of the spectroscope. The converging lens has a numerical aperture of not less than NAm.

    摘要翻译: 一种用于等离子体蚀刻器的端点检测器,包括会聚透镜,用于接收在一对相对电极和分光镜之间产生的带状等离子体光,其具有位于会聚透镜的大体后侧焦平面处的狭缝,用于 从已经收敛在狭缝处并已经通过狭缝的等离子体光的光谱光强度的基于时间的变化检测蚀刻结束时间点。 会聚透镜的瞳孔直径不大于其中W是在电极之间产生的带状等离子体光的短边的宽度,1是每个电极的端部和会聚透镜的光瞳面之间的距离 ,NAm是分光器所需的数值孔径,h是分光器狭缝的宽度。 会聚透镜的数值孔径不小于NAm。