摘要:
An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.
摘要:
A particle monitoring apparatus including a light source configured to emit plural light fluxes, a projecting optical system configured to convert the plural light fluxes into a band-shaped light flux, to lead the band-shaped light flux into a flow passage of a given gas stream, and to partially superpose the plural light fluxes to form a substantially uniform light intensity distribution of the band-shaped light flux in a widthwise direction; a light detector configured to detect intensity of light; and a particle detector configured to determine sizes of the particles passing the light flux based on intensities of the scattered lights detected by the light detector and to count the number of the particles.
摘要:
To provide a polymer electrolyte material for polymer electrolyte fuel cells, which is an electrolyte material having a high ion exchange capacity and a low resistance, and which has a higher softening temperature than a conventional electrolyte material.An electrolyte material for polymer electrolyte fuel cells, which is made of a polymer containing repeating units based on a fluoromonomer having a radical polymerization reactivity, wherein the repeating units contain, in their side chains, a structure having ionic groups represented in the following formula (α) (provided that in the formula, each of Q1 and Q2 which are independent of each other, is a single bond or a perfluoroalkylene group that may have an etheric oxygen atom, provided that they are not single bonds at the same time, Rf1 is a perfluoroalkyl group which may have an etheric oxygen atom, and X is an oxygen atom, a nitrogen atom or a carbon atom, provided that when X is an oxygen atom, a=0, when X is a nitrogen atom, a=1, and when X is a carbon atom, a=2, and Y is a fluorine atom or a monovalent perfluoro organic group).
摘要:
The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively setting constant response variables for two states before and after a processing state changes, the response variables being different from each other; and a step of conducting a multiple regression analysis about the response variables in order to produce a model expression, predictor variables of the multiple regression analysis being a plurality of detected data from a plurality of detectors provided in the processing unit. Then, the method includes: a step of actually obtaining a plurality of detected data from the plurality of detectors when the predetermined process is conducted to the object to be processed; and a step of estimating or monitoring a processing state by applying the obtained plurality of detected data to the model expression.
摘要:
The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for improving the subject is as follows. A semiconductor laser device comprises a semiconductor laser chip having a first electrode and a laser sustaining material, in which the laser sustaining material has electrodes and solder layers connected electrically therewith on the surface where the semiconductor laser chip is mounted, the first electrode of the semiconductor laser chip is connected with the solder layer of the laser sustaining material and at least the solder layer of the laser sustaining material extends from at least one end face in the longitudinal direction of an optical resonator of the semiconductor laser chip to the outside of the optical resonator.
摘要:
A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.
摘要:
A desk-top type computer with a built-in LCD includes a chassis, a planar display attached to the chassis, a mother board attached to the chassis, heat generating portions including a CPU mounted on the mother board, and a memory device electrically connected to the mother board. A heat receiving head is fixed to at least one of the heat generating portions including the CPU, and the head is connected a tube filled with a cooling liquid. The tube is arranged in a serpentine or zigzag shape in a clearance between the chassis and the planar display facing the chassis. The cooling medium liquid circulating in the tube serves as a heat transferring medium to absorb the heat at the heat generating portion, and radiate the heat through the tube disposed in the clearance between the LCD and the chassis.
摘要:
In a lens periphery edge processing apparatus comprising lens rotating shafts 16, 17 for putting and holding an objective lens therebetween, a carriage 15 rotatable around a pivot, and a grindstone rotating shaft 9 provided with a grindstone 5 for grinding the objective lens L, the lens rotating shaft 17 is provided with a reference globe 70 having a predetermined radius.
摘要:
A piezoelectric transformer element includes a piezoelectric plate made of a ceramic material, and input and output electrodes formed on the piezoelectric plate, and outputs a voltage from the output electrode upon application of a voltage to the input electrode. A reinforcing layer is selectively disposed on that portion of the piezoelectric plate where tensile stress concentrates when the piezoelectric transformer element is driven. The reinforcing layer is made of a material having the same composition as that of the ceramic material forming the piezoelectric plate and a particle size, after sintering, smaller than that of the ceramic material. A method of manufacturing a piezoelectric transformer element includes the steps of selectively disposing a reinforcing layer made of a ceramic powder at a required portion of each of ceramic sheets that form a piezoelectric plate of the piezoelectric transformer element, and molding and sintering the ceramic sheets and the ceramic powder, thus fabricating the piezoelectric plate. The ceramic powder has the same composition as that of the ceramic sheets of the piezoelectric plate and a specific powder surface area larger than that of the piezoelectric plate.
摘要:
An end-point detector for a plasma etcher, includes a converging lens for receiving strip-like plasma light produced between a pair of opposed electrodes and a spectroscope, having a slit located at a substantial rear-side focal plane of the converging lens, for detecting an etching end time point from a time-based variation of spectrum light intensity of the plasma light which has been converged at the slit and has passed through the slit. The converging lens has a pupil diameter of not greater than ##EQU1## where W is a width of a short side of the strip-like plasma light produced between the electrodes, 1 is a distance between an end of each electrode and a pupil face of the converging lens, NAm is a numerical aperture required by the spectroscope, and h is a width of a short side of the slit of the spectroscope. The converging lens has a numerical aperture of not less than NAm.