公开(公告)号：US08946788B2

公开(公告)日：2015-02-03

申请号：US13198661

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/76 ,  H01L29/207 ,  H01L21/02 ,  H01L29/66 ,  H01L29/808 ,  H01L29/872 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/66909 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66893 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/872

摘要： A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.

摘要翻译： 生长III族氮化物基外延结构的方法包括在外延生长反应器中提供衬底并将衬底加热至预定温度。 该方法还包括将含镓气体流入外延生长反应器并将含氮气体流入外延生长反应器中。 该方法还包括将吸气气体流入外延生长反应器。 预定温度大于1000℃

公开(公告)号：US08866147B2

公开(公告)日：2014-10-21

申请号：US13335572

申请日：2011-12-22

申请人： Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  David P. Bour

发明人： Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  David P. Bour

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L29/808 ,  H01L29/812 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/66856 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/32 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/475 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122

摘要： A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.

摘要翻译： 半导体结构包括III族氮化物衬底和沿生长方向耦合到III族氮化物衬底的漂移区域。 半导体衬底还包括耦合到漂移区的沟道区。 通道区域由基本沿着生长方向设置的通道侧壁限定。 半导体衬底还包括相对于沟道区域侧向设置的栅极区域。

公开(公告)号：US08836071B2

公开(公告)日：2014-09-16

申请号：US13300009

申请日：2011-11-18

申请人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

发明人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

IPC分类号： H01L29/47 ,  H01L29/872 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66143

摘要： A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes the first surface. The method also includes forming an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate and forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate. The method further includes forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer and forming a Schottky contact electrically coupled to the n-type AlGaN surface layer.

摘要翻译： 使用氮化镓（GaN）材料制造肖特基二极管的方法包括提供具有第一表面和第二表面的n型GaN衬底。 第二表面与第一表面相反。 该方法还包括形成电耦合到n型GaN衬底的第一表面的欧姆金属接触并形成耦合到n型GaN衬底的第二表面的n型GaN外延层。 该方法还包括形成耦合到n型GaN外延层并形成电耦合到n型AlGaN表面层的肖特基接触的n型氮化镓铝（AlGaN）表面层。

公开(公告)号：US08592938B2

公开(公告)日：2013-11-26

申请号：US13300028

申请日：2011-11-18

申请人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

发明人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

IPC分类号： H01L29/47

摘要： A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

公开(公告)号：US08592298B2

公开(公告)日：2013-11-26

申请号：US13335355

申请日：2011-12-22

申请人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/3205

CPC分类号： H01L29/0619 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

摘要翻译： 一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分，以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

公开(公告)号：US08571817B2

公开(公告)日：2013-10-29

申请号：US12208255

申请日：2008-09-10

申请人： David P. Bour ,  Christopher L. Chua ,  Zhihong Yang

发明人： David P. Bour ,  Christopher L. Chua ,  Zhihong Yang

IPC分类号： G01F1/34

CPC分类号： C23C16/4482 ,  C23C16/52

摘要： One disclosed feature of the embodiments is a control processor in a vapor delivery system for chemical vapor deposition precursors. A pressurization rate processor calculates first and second pressurization rate curves at first and second time instants. A volume calculator computes consumed volume based on first and second volumes at the respective first and second time instants. The first and second volumes are computed using slopes of lines fitting the first and second pressurization rate curves.

摘要翻译： 实施例的一个公开的特征是用于化学气相沉积前体的蒸气输送系统中的控制处理器。 加压率处理器计算第一和第二时刻的第一和第二加压速率曲线。 体积计算器基于相应的第一和第二时刻的第一和第二体积计算消耗的体积。 使用适合第一和第二加压速率曲线的线的斜率来计算第一和第二体积。

公开(公告)号：US20130161635A1

公开(公告)日：2013-06-27

申请号：US13335572

申请日：2011-12-22

申请人： Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  David P. Bour

发明人： Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  David P. Bour

IPC分类号： H01L29/78 ,  H01L21/338

CPC分类号： H01L29/66856 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/32 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/475 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122

摘要： A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.

摘要翻译： 半导体结构包括III族氮化物衬底和沿生长方向耦合到III族氮化物衬底的漂移区域。 半导体衬底还包括耦合到漂移区的沟道区。 通道区域由基本沿着生长方向设置的通道侧壁限定。 半导体衬底还包括相对于沟道区域侧向设置的栅极区域。

公开(公告)号：US20130137225A1

公开(公告)日：2013-05-30

申请号：US13307108

申请日：2011-11-30

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

IPC分类号： H01L21/205 ,  H01L21/337

CPC分类号： H01L21/02636 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/66446

摘要： A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

摘要翻译： 生长n型III族氮化物基外延层的方法包括在外延生长反应器中提供衬底，形成耦合到衬底表面的一部分的掩模材料，并将第一气体流入外延生长反应器 。 第一种气体包括III族元素和碳。 该方法还包括使第二气体流入外延生长反应器。 第二气体包括V族元素，V族元素与III族元素的摩尔比为至少5,000。 该方法还包括生长n型III族氮化物基外延层。

公开(公告)号：US20130126886A1

公开(公告)日：2013-05-23

申请号：US13300009

申请日：2011-11-18

申请人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

发明人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66143

摘要： A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes the first surface. The method also includes forming an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate and forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate. The method further includes forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer and forming a Schottky contact electrically coupled to the n-type AlGaN surface layer.

摘要翻译： 使用氮化镓（GaN）材料制造肖特基二极管的方法包括提供具有第一表面和第二表面的n型GaN衬底。 第二表面与第一表面相反。 该方法还包括形成电耦合到n型GaN衬底的第一表面的欧姆金属接触并形成耦合到n型GaN衬底的第二表面的n型GaN外延层。 该方法还包括形成耦合到n型GaN外延层并形成电耦合到n型AlGaN表面层的肖特基接触的n型氮化镓铝（AlGaN）表面层。

公开(公告)号：US20130126885A1

公开(公告)日：2013-05-23

申请号：US13299254

申请日：2011-11-17

申请人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/761 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/765 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66909 ,  H01L29/8083 ,  H01L29/872

摘要： A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.

摘要翻译： 一种用于制造边缘终端结构的方法包括提供具有第一表面和第二表面和第一导电类型的衬底，形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成第二 与第一导电类型相反的第二导电类型的GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 该方法还包括将离子注入第二GaN外延层的第一区域以将第二GaN外延层的第二区域与第二GaN外延层的第三区域电隔离。 该方法还包括形成耦合到第二GaN外延层的第二区域并形成耦合到第二GaN外延层的第三区域的边缘端接结构的有源器件。