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公开(公告)号：US08175429B2
公开(公告)日：2012-05-08
申请号：US12479589
申请日：2009-06-05
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microdisk comprises: a top layer; a bottom layer; an intermediate layer having at least one quantum well, the intermediate layer sandwiched between the top layer and the bottom layer; a peripheral annular region including at least a portion of the top, intermediate, and bottom layers; and a current isolation region configured to occupy at least a portion of a central region of the microdisk including at least a portion of the top, intermediate, and bottom layers and having relatively lower index of refraction than the peripheral annular region.
摘要翻译： 本发明的各种实施方案涉及可用作激光的微谐振器系统，调制器和光电检测器以及用于制造微谐振器系统的方法。 在一个实施例中，微盘包括：顶层; 底层; 具有至少一个量子阱的中间层，夹在顶层和底层之间的中间层; 包括顶层，中间层和底层的至少一部分的周边环形区域; 以及电流隔离区域，其构造成占据所述微盘的至少一部分包括所述顶层，中间层和底层的至少一部分，并且具有比所述周边环形区域相对较低的折射率。
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92.发明申请公开(公告)号：US20120032140A1
公开(公告)日：2012-02-09
申请号：US13259444
申请日：2009-09-18
摘要： A light-emitting diode (LED) (101). The LED (101) includes a plurality of portions including a p-doped portion (112), an intrinsic portion (114), and a n-doped portion (116). The intrinsic portion (114) is disposed between the p-doped portion (112) and the n-doped portion (116) and forms a p-i junction (130) and an i-n junction (134) The LED (101) also includes a metal-dielectric-metal (MDM) structure (104) including a first metal layer (140), a second metal layer (144), and a dielectric medium disposed between the first metal layer (140) and the second metal layer (144). The metal layers of the MDM structure (104) are disposed about orthogonally to the p-i junction (130) and the i-n junction (134); the dielectric medium includes the intrinsic portion (114); and, the MDM structure (104) is configured to enhance modulation frequency of the LED (101) through interaction with surface plasmons that are present in the metal layers.
摘要翻译： 发光二极管（LED）（101）。 LED（101）包括多个部分，包括p掺杂部分（112），本征部分（114）和n掺杂部分（116）。 本征部分（114）设置在p掺杂部分（112）和n掺杂部分（116）之间，并形成π结（130）和在结（134）中。LED（101）还包括金属 包括第一金属层（140），第二金属层（144）和布置在第一金属层（140）和第二金属层（144）之间的电介质的电 - 金属（MDM）结构（104）。 MDM结构（104）的金属层与p-i结（130）和i-n结（134）正交地设置; 电介质包括本征部分（114）; 并且，MDM结构（104）被配置为通过与存在于金属层中的表面等离子体相互作用来增强LED（101）的调制频率。
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公开(公告)号：US20110268392A1
公开(公告)日：2011-11-03
申请号：US13126848
申请日：2008-10-31
申请人： Paul Kessler Rosenberg , Michael Renne Ty Tan , Huei Pei Kuo , Robert G. Walmsley , Eric Peterson
发明人： Paul Kessler Rosenberg , Michael Renne Ty Tan , Huei Pei Kuo , Robert G. Walmsley , Eric Peterson
IPC分类号： G02B6/38
CPC分类号： G02B13/22 , G02B7/003 , H04B10/803
摘要： A device for optically coupling two photonic elements may comprise an interposer where each photonic element is axially aligned with an optical pathway in the interposer. Also included is an optics assembly configured to direct a photonic signal along the optical pathway; and a mechanical guide assembly configured to reduce the relative tilt and rotation of photonic elements. Another such device may comprise two connectors where each connector comprises an optical pathway element in which an optics assembly is situated and a photonic element aligned with the optical pathway element. A mechanical guide assembly secures the optical pathway elements in a position so as to reduce the relative tilt and rotation of the photonic elements. A connection for optically coupling two computing units can comprise a partition situated between the computing units and on which an interposer is mounted.
摘要翻译： 用于光耦合两个光子元件的装置可以包括插入器，其中每个光子元件与插入器中的光路径轴向对准。 还包括被配置为沿着光学路径引导光子信号的光学组件; 以及被配置为减少光子元件的相对倾斜和旋转的机械引导组件。 另一个这样的装置可以包括两个连接器，其中每个连接器包括其中设置光学组件的光学路径元件和与光学路径元件对准的光子元件。 机械引导组件将光学路径元件固定在一个位置，以便减少光子元件的相对倾斜和旋转。 用于光耦合两个计算单元的连接可以包括位于计算单元之间并且安装有插入器的分区。
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94.发明授权Dynamic optical signal tracking on a detector array in a free space optical communication system 有权在自由空间光通信系统中的检测器阵列上的动态光信号跟踪公开(公告)号：US08009991B2
公开(公告)日：2011-08-30
申请号：US11977501
申请日：2007-10-24
申请人： Terrel Morris , Michael Renne Ty Tan , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Marco Fiorentino
发明人： Terrel Morris , Michael Renne Ty Tan , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Marco Fiorentino
IPC分类号： H04B10/10
CPC分类号： H04B10/1121
摘要： A free-space optical communication system includes a detector array having a plurality of detector elements and a transmitting source. Dynamic movement of the optical signal on the detector array is caused by changes in orientation of the transmitting source. A tracker tracks the movement of the optical signal in real-time on the detector array. An output signal is derived from at least one of the detector elements illuminated by the optical signal.
摘要翻译： 自由空间光通信系统包括具有多个检测器元件和发送源的检测器阵列。 光信号在探测器阵列上的动态移动是由发射源方向的变化引起的。 跟踪器在检测器阵列上实时跟踪光信号的移动。 从由光信号照亮的检测器元件中的至少一个导出输出信号。
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公开(公告)号：US20110206320A1
公开(公告)日：2011-08-25
申请号：US13126845
申请日：2008-10-31
申请人： Huei Pei Kuo , Michael Renne Ty Tan , Shih-Yuan Wang , Robert G. Walmsley , Paul Kessier Rosenberg
发明人： Huei Pei Kuo , Michael Renne Ty Tan , Shih-Yuan Wang , Robert G. Walmsley , Paul Kessier Rosenberg
CPC分类号： G02B6/2817 , G02B27/126 , G02B27/145
摘要： Beam couplers and splitters are disclosed herein. An embodiment of a beam coupler and splitter includes a first waveguide including a bevel and a bend, and a second waveguide including a bevel complementarily shaped to the first waveguide bevel. The first waveguide bevel is configured to totally internally reflect at least some light incident thereon. The second waveguide is coupled to the first waveguide such that i) the second waveguide bevel is adjacent to at least a portion of the first waveguide bevel, and ii) a predetermined coupling ratio is achieved.
摘要翻译： 光束耦合器和分离器在本文中公开。 光束耦合器和分离器的实施例包括包括斜面和弯曲部的第一波导和包括与第一波导斜面互补成形的斜面的第二波导。 第一波导斜面被配置为完全内部反射入射到其上的至少一些光。 第二波导耦合到第一波导，使得i）第二波导斜面与第一波导斜面的至少一部分相邻，以及ii）实现预定的耦合比。
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公开(公告)号：US20110026129A1
公开(公告)日：2011-02-03
申请号：US12922103
申请日：2008-04-02
申请人： Huei Pei Kuo , Michael Renne Ty Tan
发明人： Huei Pei Kuo , Michael Renne Ty Tan
IPC分类号： G02B27/14
CPC分类号： G02B27/145 , G02B5/04 , G02B27/106 , G02B27/144
摘要： Embodiments of the present invention are directed to single prism beamsplitters and compound beamsplitters formed from combining one or more of the single prism beamsplitters. In one embodiment, the beamsplitters can be configured to produce one or more split beams of light that can emerge at angles other than 90° to one another. The prisms of the beamsplitter embodiments are configured so that light propagating through prisms encounter one or more intermediate planar surfaces at various angles with respect to the path of the light. A certain number of the intermediate planar surfaces can be angled so that the light transmitted along a particular path undergoes total internal reflection within the prism. A number of other intermediate planar surfaces are angled so that the light transmitted along a particular path does not undergo total internal reflection.
摘要翻译： 本发明的实施例涉及通过组合一个或多个单棱镜分束器而形成的单棱镜分束器和复合分束器。 在一个实施例中，分束器可以被配置为产生可以以不同于90°的角度出现的一个或多个分束光束。 分束器实施例的棱镜被配置为使得通过棱镜传播的光相对于光的路径以各种角度遇到一个或多个中间平面。 一定数量的中间平面可以是成角度的，使得沿特定路径传输的光在棱镜内部经受全内反射。 许多其它中间平面是成角度的，使得沿特定路径传输的光不会经受全内反射。
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公开(公告)号：US20100295018A1
公开(公告)日：2010-11-25
申请号：US12864205
申请日：2008-01-30
CPC分类号： B81C1/00142 , B81C2201/0171 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/105 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.
摘要翻译： 纳米结构包括高导电微晶层，双极纳米线和另一层（18,30）。 高导电性微晶层包括微晶材料和金属。 双极纳米线的一端连接到高导电微晶层，另一端连接到另一层。
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公开(公告)号：US07764852B2
公开(公告)日：2010-07-27
申请号：US11888015
申请日：2007-07-30
IPC分类号： G02B6/26
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/026 , H01S5/0424 , H01S5/1032 , H01S5/1042 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system comprises a substrate having a top surface layer and at least one waveguide embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator having a top layer, an intermediate layer, a bottom layer, a peripheral region, and a peripheral coating. The bottom layer of the microresonator is attached to and in electrical communication with the top surface layer of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide. The peripheral coating covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.
摘要翻译： 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中，微谐振器系统包括具有顶表面层和嵌入在衬底中的至少一个波导并且邻近衬底的顶表面层定位的衬底的衬底。 微谐振器系统还包括具有顶层，中间层，底层，周边区域和外围涂层的微谐振器。 微谐振器的底层附着到衬底的顶表面层并与其电连通。 定位微谐振器使得周边区域的至少一部分位于至少一个波导的上方。 周边涂层覆盖周边表面的至少一部分，并且具有比微谐振器的顶层，中间层和底层更低的折射率。
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公开(公告)号：US20090239323A1
公开(公告)日：2009-09-24
申请号：US12479604
申请日：2009-06-05
IPC分类号： H01L21/00
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems and to methods for fabricating the microresonator systems. In one embodiment, a method of fabricating a microresonator system comprises: forming a multilayer system having a bottom layer, a top layer, and an intermediate layer having one or more quantum wells and sandwiched between the bottom layer and the top layer; embedding at least one waveguide in a substrate having a top surface, the at least one waveguide positioned adjacent to the top surface of the substrate; wafer bonding the top layer of the multilayer system to the top surface of the substrate; forming a microresonator in the multilayer system, wherein at least a portion of a peripheral annular region of the microresonator is portioned above the at least one waveguide; and forming a current isolation region in at least a portion of a central region of the microresonator.
摘要翻译： 本发明的各种实施例涉及微谐振器系统和用于制造微谐振器系统的方法。 在一个实施例中，制造微谐振器系统的方法包括：形成具有底层，顶层和具有一个或多个量子阱并夹在底层和顶层之间的中间层的多层系统; 在具有顶表面的衬底中嵌入至少一个波导，所述至少一个波导定位成与衬底的顶表面相邻; 将多层系统的顶层晶片结合到衬底的顶表面; 在所述多层系统中形成微谐振器，其中所述微谐振器的外围环形区域的至少一部分被分配在所述至少一个波导的上方; 以及在所述微谐振器的中心区域的至少一部分中形成电流隔离区。
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100.发明授权Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector 有权垂直腔表面发射激光器包括支持的气隙分布式布拉格反射器公开(公告)号：US07573931B2
公开(公告)日：2009-08-11
申请号：US10042590
申请日：2002-01-09
CPC分类号： H01S5/18341 , H01S5/18308 , H01S5/18363 , H01S5/2224 , H01S5/3095
摘要： A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.
摘要翻译： 公开了一种结合有支撑气隙分布布拉格反射器的垂直腔表面发射激光器。 支撑气隙DBR包括为原始材料层提供机械支撑的再生长材料层。 支撑的气隙DBR是通过在合适的衬底上首先生长第一材料和牺牲材料的交替对来制造的。 第一材料和牺牲材料的层对被合适的介电材料覆盖。 然后选择性地去除介电材料暴露第一材料和牺牲材料的区域，其中期望附加材料的选择性再生长。 附加材料的选择性再生长为在牺牲材料的选择性蚀刻去除之后保留的半导体材料提供机械支撑。
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