公开(公告)号：US20050111071A1

公开(公告)日：2005-05-26

申请号：US10959144

申请日：2004-10-07

申请人： Kyoko Kojima ,  Motoyasu Terao

发明人： Kyoko Kojima ,  Motoyasu Terao

IPC分类号： G02F1/15 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  G11B7/244

CPC分类号： G02F1/1525

摘要： The present invention relates to an information-recording medium for recording and reproducing information by using light and a method for recording information for the purpose of high-speed and high-density recording. The medium has a structural unit having a conductive polymer layer and an electrolyte layer sandwiched by a pair of electrode layers, each of which contains a thermally decomposable or crosslinkable compound. The medium described above allows high-speed rotation of the medium as it has a narrower range heated during recording and is more tolerant of displacement of auto-focusing or tracking, and also allows high-speed and high-density recording. The medium also allows lamination of multiple layers and easier selection of layers therein.

摘要翻译： 本发明涉及用于通过使用光来记录和再现信息的信息记录介质以及用于记录用于高速和高密度记录的信息的方法。 介质具有具有导电聚合物层和由一对电极层夹持的电解质层的结构单元，每个电极层含有可热分解或可交联的化合物。 上述介质允许介质的高速旋转，因为其在记录期间加热的范围更窄，并且更容忍自动聚焦或跟踪的位移，并且还允许高速和高密度记录。 该介质还允许层压多层并且更容易地选择其中的层。

公开(公告)号：US20070058518A1

公开(公告)日：2007-03-15

申请号：US11501048

申请日：2006-08-09

申请人： Akemi Hirotsune ,  Motoyasu Terao ,  Takeshi Maeda ,  Masaki Mukoh ,  Toshimichi Shintani

发明人： Akemi Hirotsune ,  Motoyasu Terao ,  Takeshi Maeda ,  Masaki Mukoh ,  Toshimichi Shintani

IPC分类号： G11B7/24

CPC分类号： G11B7/24038 ,  B82Y10/00 ,  G11B7/00736 ,  G11B7/24082 ,  G11B7/24085 ,  G11B7/243 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/257 ,  G11B7/258 ,  G11B7/268 ,  G11B20/1217 ,  G11B2020/1227 ,  G11B2020/1239 ,  G11B2020/1268 ,  G11B2020/1274 ,  G11B2020/1292 ,  G11B2020/1294 ,  G11B2020/1298 ,  G11B2220/235

摘要： In an optical disk in which a recording layer is selected by applying voltages, a different address pit is formed in each recording layer. To this end, a plurality of recording layers are formed in a way that the plurality of recording layers follow a concavo-convex shape formed in a substrate, and thus the plurality of recording layers keep the concavo-convex shape even after the formation; mutually different address marks are add-on written, as a part of the address information, respectively to recording layer so that the address and track information can be confirmed in each layer.

摘要翻译： 在通过施加电压选择记录层的光盘中，在每个记录层中形成不同的地址凹坑。 为此，多个记录层形成为多个记录层遵循形成在基板中的凹凸形状，因此即使在形成之后，多个记录层保持凹凸形状; 分别将相互不同的地址标记作为地址信息的一部分写入记录层，以便可以在每层中确认地址和轨道信息。

公开(公告)号：US20060291360A1

公开(公告)日：2006-12-28

申请号：US11209731

申请日：2005-08-24

申请人： Takeshi Maeda ,  Motoyasu Terao

发明人： Takeshi Maeda ,  Motoyasu Terao

IPC分类号： G11B7/00

CPC分类号： G11B7/0938 ,  G11B7/0901 ,  G11B7/0908 ,  G11B7/1275 ,  G11B2007/0013

摘要： A recording and reproduction method utilized for multilayer optical disks, wherein a light source for the servo layer and a light source for the recording layer are modulated at different frequencies or made to irradiate by time division onto a multilayer optical disk formed from a combination of a plurality of recording layers and one servo layer, so that information from each layer can be separated by even just one optical sensor.

摘要翻译： 用于多层光盘的记录和再现方法，其中用于伺服层的光源和用于记录层的光源以不同的频率被调制，或者通过时分进行照射到由以下的组合形成的多层光盘上 多个记录层和一个伺服层，使得即使只有一个光学传感器也可以分离来自每层的信息。

公开(公告)号：US08618523B2

公开(公告)日：2013-12-31

申请号：US12302740

申请日：2006-05-31

申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

IPC分类号： H01L47/00

CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

公开(公告)号：US08132063B2

公开(公告)日：2012-03-06

申请号：US13191442

申请日：2011-07-26

申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

IPC分类号： G11C29/00

CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

公开(公告)号：US20110292722A1

公开(公告)日：2011-12-01

申请号：US13207611

申请日：2011-08-11

申请人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

发明人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

IPC分类号： G11C11/00

CPC分类号： G01R31/31715 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/71 ,  G11C2213/72 ,  Y10T29/49169

摘要： A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogcnidc material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.

摘要翻译： 实现了高度可靠的大容量相变存储器模块。 根据本发明的半导体器件包括存储阵列，该存储器阵列具有堆叠使用了电阻元件的存储层和由二极管构成的存储单元的结构，并且根据层来改变初始化条件和重写条件 其中所选择的存储器单元被定位。 根据操作选择电流镜电路，并且同时根据电压选择中的复位电流的控制机构的操作来改变初始化条件和重写条件（这里为复位条件） 电路和电流镜电路。

公开(公告)号：US08000126B2

公开(公告)日：2011-08-16

申请号：US12522744

申请日：2007-01-11

申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

IPC分类号： G11C11/00 ,  H01L29/66

CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

公开(公告)号：US20110049454A1

公开(公告)日：2011-03-03

申请号：US12305890

申请日：2006-06-23

申请人： Motoyasu Terao ,  Yuichi Matsui ,  Tsuyoshi Koga ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa ,  Yoshitaka Sasago ,  Junko Ushiyama ,  Akemi Hirotsune

发明人： Motoyasu Terao ,  Yuichi Matsui ,  Tsuyoshi Koga ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa ,  Yoshitaka Sasago ,  Junko Ushiyama ,  Akemi Hirotsune

IPC分类号： H01L45/00

CPC分类号： H01L45/1675 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144

摘要： In a phase-change memory, an interface layer is inserted between a chalcogenide material layer and a plug. The interface layer is arranged so as not to cover the entire interface of a plug-like electrode. When the plug is formed at an upper part than the chalcogenide layer, the degree of integration is increased. The interface layer is formed by carrying out sputtering using an oxide target, or, by forming a metal film by carrying out sputtering using a metal target followed by oxidizing the metal film in an oxidation atmosphere such as oxygen radical, oxygen plasma, etc.

摘要翻译： 在相变存储器中，界面层插入硫族化物材料层和插塞之间。 界面层被布置成不覆盖插塞状电极的整个界面。 当塞子形成在比硫族化物层的上部时，积分度增加。 通过使用氧化物靶进行溅射而形成界面层，或者通过使用金属靶进行溅射而形成金属膜，然后在氧自由基，氧等离子体等的氧化气氛中氧化金属膜。

公开(公告)号：US07852727B2

公开(公告)日：2010-12-14

申请号：US12078227

申请日：2008-03-28

申请人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

发明人： Makoto Miyamoto ,  Tsuyoshi Toda ,  Masatoshi Ohtake ,  Motoyasu Terao ,  Junko Ushiyama ,  Keikichi Andoo ,  Yumiko Anzai ,  Akemi Hirotsune ,  Tetsuya Nishida ,  Hideki Saga

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00454 ,  G11B7/00557 ,  G11B7/006 ,  G11B7/126 ,  G11B20/10009 ,  G11B20/1426

摘要： Recording information is disclosed in which an information recording medium is irradiated with a recording energy beam that is power-modulated into at least a record power level and a record-ready power level lower than the record power level. The information is recorded on the recording medium in the form of length and interval of a mark portion. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion.

摘要翻译： 公开了一种信息记录介质，其被记录能量束照射，所述记录能量束被功率调制成至少记录功率电平和低于记录功率电平的记录就绪功率电平。 信息以标记部分的长度和间隔的形式记录在记录介质上。 当形成预定长度的标记部分时，与在至少包括用于形成的脉冲的能量束脉冲串的第一脉冲之前或之后形成不同长度的标记部分相比，能量束的辐射能量增加 标记部分。

公开(公告)号：US07638786B2

公开(公告)日：2009-12-29

申请号：US11272811

申请日：2005-11-15

申请人： Yuichi Matsui ,  Motoyasu Terao ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Naoki Yamamoto

发明人： Yuichi Matsui ,  Motoyasu Terao ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Naoki Yamamoto

IPC分类号： H01L29/02

CPC分类号： C23C14/5806 ,  C23C14/0623 ,  C23C14/541 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641

摘要： The annealing process at 400° C. or more required for the wiring process for a phase change memory has posed the problem in that the crystal grains in a chalcogenide material grow in an oblique direction to cause voids in a storage layer. The voids, in turn, cause peeling due to a decrease in adhesion, variations in resistance due to improper contact with a plug, and other undesirable events. After the chalcogenide material has been formed in an amorphous phase, post-annealing is conducted to form a (111)-oriented and columnarly structured face-centered cubic. This is further followed by high-temperature annealing to form a columnar, hexagonal closest-packed crystal. Use of this procedure makes it possible to suppress the growth of inclined crystal grains that causes voids, since crystal grains are formed in a direction perpendicular to the surface of an associated substrate.

摘要翻译： 在相变存储器的布线处理所需的400℃以上所需的退火处理的问题在于，硫属化物材料中的晶粒沿倾斜方向生长，从而在储存层中产生空隙。 这些空隙又由于粘合力的降低而导致剥离，由于与插头的不正确接触导致的电阻变化以及其它不期望的事件。 在非晶态形成硫族化物材料之后，进行后退火以形成（111）取向和柱状结构的面心立方。 此后进一步进行高温退火以形成柱状，六边形最接近填充的晶体。 使用该方法可以抑制由于在垂直于相关衬底的表面的方向上形成晶粒而导致空隙的倾斜晶粒的生长。