摘要:
A wavelength conversion device may include a wavelength conversion element that converts an entering first laser beam into a second laser beam by wavelength conversion, and a cooling mechanism that cools the wavelength conversion element from at least one surface of the wavelength conversion element.
摘要:
An EUV light generation system includes a driver laser comprising a master oscillator such as a semiconductor laser, a spatial filter, gas slab amplification devices, relay optical systems, and high-speed axial-flow amplifiers. The slab amplification devices include beam adjusting optical units disposed, respectively, at input and output sides of the slab amplifiers SA to convert the beam profile and/or polarization direction and/or an elongated direction of the beam profile with the slab amplifiers is parallel to a free space axis AF of the slab waveguides, i.e. parallel to the discharge electrodes.
摘要:
An apparatus for physically cleaning a nozzle inside a chamber may include a cleaning member disposed inside the chamber. The nozzle is configured to output a target material into the chamber in which extreme ultraviolet light is generated. The cleaning member is configured to remove the target material deposited around the nozzle.
摘要:
A window unit may include: a window configured to allow a laser beam to be transmitted therethrough; and a holder for holding the window at a periphery thereof, the holder being provided with a flow channel thereinside configured to allow a fluid to flow.
摘要:
The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要:
An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.
摘要:
A spectral purity filter may include: a plurality of segments that each includes a mesh in which an array of apertures of an aperture size at or below a predetermined size is formed and which has electroconductivity; and a frame that supports the plurality of the segments at least at a periphery thereof.
摘要:
A narrow-band laser device for exposure apparatus that allows to reduce damage to, and to hence extend the life of, optical elements such as chamber windows, output coupling mirrors or the like. A ring resonator is provided in an amplification stage laser of the narrow-band laser device for exposure apparatus that comprises an oscillation stage laser and an amplification stage laser. An OC, a high reflection mirror and a high reflection mirror are arranged to be offset, for instance, relative to a longitudinal direction axis of discharge electrodes. As a result, the beam width of laser light injected through the OC of the amplification stage laser becomes wider as the beam shifts inside the ring resonator, in each round trip within the ring resonator. The energy density of laser light in the optical elements of the amplification stage laser becomes reduced thereby, thus prolonging the life of the optical elements.
摘要:
The control of the spectral purity width E95 is performed while imparting practically no effect to the control of a central wavelength, and the spectral purity width E95 is stabilized. A wavefront adjuster 32 is provided on an output side of the interior of an optical resonator, i.e., on an output coupler 31 side. Light generated in a laser chamber 10 is transmitted through the wavefront adjuster 32 from the laser chamber 10 side, and reaches the output coupler 31. In the wavefront adjuster 32, the distance between concave and convex lenses 33 and 34 is adjusted so that a desired spectral purity width E95 can be obtained. Then, when the light passes through the wavefront adjuster 32, the wavefront of the light is adjusted to a desired wavefront.
摘要:
An injection locking type or MOPA type of laser device capable of always obtaining stable output energy and wavelength is provided. For this purpose, the laser device includes an oscillator (11A) for oscillating seed laser light (21A) with wavelength band-narrowed by a band-narrowing unit (30), an amplifier (11B) for amplifying the seed laser light and emitting the amplified laser light (21B), a wavelength monitor (34A) for detecting at least a wavelength characteristic of the seed laser light, and a laser controller (29) for performing adjustment oscillation to contain a wavelength characteristic within a predetermined allowable range, at a time of startup or when laser oscillation is suspended for a predetermined period of time or more.