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    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus
    8.
    发明授权
    Chamber apparatus and extreme ultraviolet (EUV) light generation apparatus including the chamber apparatus 有权
    包括室装置的室内装置和极紫外（EUV）光发生装置

    公开(公告)号：US08698113B2

    公开(公告)日：2014-04-15

    申请号：US13696517

    申请日：2011-12-13

    申请人： Masato Moriya ,  Osamu Wakabayashi

    发明人： Masato Moriya ,  Osamu Wakabayashi

    IPC分类号： H05G2/00

    CPC分类号： G03F7/708 ,  G03F7/70008 ,  G03F7/70808 ,  G03F7/70833

    摘要： A chamber apparatus used with a laser apparatus may include a chamber, a beam expanding optical system, and a focusing optical system. The chamber may be provided with at least one inlet, through which a laser beam outputted from the laser apparatus is introduced into the chamber. The beam expanding optical system is configured to expand the laser beam in diameter. The focusing optical system is configured to focus the laser beam that has been expanded in diameter.

    摘要翻译： 与激光装置一起使用的室装置可以包括室，扩束光学系统和聚焦光学系统。 该室可以设置有至少一个入口，激光装置输出的激光束通过该入口被引入腔室。 扩束光学系统被配置为直径地扩大激光束。 聚焦光学系统被配置为聚焦已经扩大直径的激光束。

    Semiconductor exposure device using extreme ultra violet radiation
    9.
    发明授权
    Semiconductor exposure device using extreme ultra violet radiation 有权
    半导体曝光装置采用极紫外辐射

    公开(公告)号：US08507885B2

    公开(公告)日：2013-08-13

    申请号：US13494778

    申请日：2012-06-12

    申请人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    发明人： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

    IPC分类号： G21K5/04

    CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

    摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

    摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。