摘要:
An injection locking type or MOPA type of laser device capable of always obtaining stable output energy and wavelength is provided. For this purpose, the laser device includes an oscillator (11A) for oscillating seed laser light (21A) with wavelength band-narrowed by a band-narrowing unit (30), an amplifier (11B) for amplifying the seed laser light and emitting the amplified laser light (21B), a wavelength monitor (34A) for detecting at least a wavelength characteristic of the seed laser light, and a laser controller (29) for performing adjustment oscillation to contain a wavelength characteristic within a predetermined allowable range, at a time of startup or when laser oscillation is suspended for a predetermined period of time or more.
摘要:
A laser apparatus according to embodiment may include: a laser chamber filled with a laser gain medium; a pair of electrodes disposed in the laser chamber; a charger configured to apply a charge voltage for causing a discharge to occur between the pair of the electrodes; a pulse power module configured to covert the charge voltage applied by the charger into a short pulsed voltage, and apply the short pulsed voltage between the pair of the electrodes; and a controller configured to calculate input energies Ein applied to the pair of the electrodes based on the charge voltage, calculate an integration value Einsum of the input energies Ein by integrating the calculated input energies Ein, and determine whether the integration value Einsum exceeds an integration lifetime value Einsumlife of input energy or not.
摘要:
A laser device for an exposure apparatus may include: a MOPA-type or MOPO-type laser device including a seed laser and at least one gas discharge-pumped amplifier stage that receives output light from the seed laser as an input, amplifies the light, and outputs the amplified light; and at least one of a laser gas control device that at least changes the total pressure of a laser gas in said amplifier stage in accordance with requested energy and a laser power source control device that at least changes pump intensity of discharge electrodes in said amplifier stage in accordance with said requested energy, in a case where the energy of laser output light from said laser device is to be changed discontinuously in response to a request from an exposure apparatus.
摘要:
A mirror device may include: a mirror including a base plate, a reflective film on a first surface of the base plate, and a plurality of first protrusions on a second surface of the base plate; a plurality of support parts for respectively supporting the plurality of the first protrusions, each support part having a groove formed therein for guiding the first protrusion; and a plurality of clamps for respectively pressing the plurality of the first protrusions against the respective grooves in the plurality of the support parts.
摘要:
A laser apparatus may include a master oscillator configured to output a laser beam, at least one amplifier disposed in a beam path of the laser beam from the master oscillator, at least one power source for applying a high-frequency voltage to the at least one amplifier, and a controller for varying the high-frequency voltage to be applied to the at least one amplifier from the at least one power source.
摘要:
An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.
摘要:
A wavelength conversion device may include a wavelength conversion element that converts an entering first laser beam into a second laser beam by wavelength conversion, and a cooling mechanism that cools the wavelength conversion element from at least one surface of the wavelength conversion element.
摘要:
An extreme ultraviolet light source apparatus using a spectrum purity filter capable of obtaining EUV light with high spectrum purity. The apparatus includes a chamber; a target supply unit for supplying a target material; a driver laser using a laser gas containing a carbon dioxide gas as a laser medium, for applying a laser beam to the target material to generate plasma; a collector mirror for collecting and outputting the extreme ultraviolet light radiated from the plasma; and a spectrum purity filter provided in an optical path of the extreme ultraviolet light, for transmitting the extreme ultraviolet light and reflecting the laser beam, the spectrum purity filter including a mesh having electrical conductivity and formed with an arrangement of apertures having a pitch not larger than a half of a shortest wavelength of the laser beam applied by the driver laser.
摘要:
An optical device may include: an optical module disposed in a beam delivery path of a laser beam; a beam adjusting unit disposed in the beam delivery path for adjusting the beam delivery path of the laser beam; a measuring unit disposed in the beam delivery path for detecting the beam delivery path; and a control unit for controlling the beam adjusting unit based on a detection result of the beam delivery path of the laser beam detected by the measuring unit.
摘要:
An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.