公开(公告)号：US20120228525A1

公开(公告)日：2012-09-13

申请号：US13402277

申请日：2012-02-22

申请人： Masato MORIYA ,  Hideyuki Hayashi ,  Osamu Wakabayashi

发明人： Masato MORIYA ,  Hideyuki Hayashi ,  Osamu Wakabayashi

IPC分类号： H05G2/00

CPC分类号： H05G2/008 ,  H05G2/003 ,  H05G2/006

摘要： Systems and methods are provided in which an extreme ultraviolet (EUV) light generation apparatus used with a laser apparatus is configured to detect an image of a laser beam by which a target has been irradiated. The EUV light generation apparatus may also be configured to control the position at which a laser beam is to be focused and the position of a target, based on the detection result.

摘要翻译： 提供了一种系统和方法，其中与激光装置一起使用的极紫外（EUV）光产生装置被配置为检测已经照射靶的激光束的图像。 EUV光发生装置还可以被配置为基于检测结果来控制激光束被聚焦的位置和目标的位置。

公开(公告)号：US20150168848A1

公开(公告)日：2015-06-18

申请号：US14629282

申请日：2015-02-23

申请人： Hiroshi TANAKA ,  Akihiko KUROSU ,  Hiroyuki MASUDA ,  Hideyuki OCHIAI ,  Osamu WAKABAYASHI ,  Masato MORIYA

发明人： Hiroshi TANAKA ,  Akihiko KUROSU ,  Hiroyuki MASUDA ,  Hideyuki OCHIAI ,  Osamu WAKABAYASHI ,  Masato MORIYA

IPC分类号： G03F7/20 ,  H01L21/268 ,  H01L21/67 ,  H01L21/66

CPC分类号： G03F7/70483 ,  G03F7/70041 ,  G03F7/70058 ,  G03F7/70358 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/26

摘要： A light source apparatus according to an embodiment may be used for an exposure apparatus which exposes a plurality of wafers by repeating a wafer exposure for exposing a total exposure area of each wafer. The wafer exposure may include a sequential execution of scanning exposures in which each divided area defined by dividing the total exposure area of each wafer is scanned by pulsed light. The apparatus may comprise: a light source controller configured to execute a control for outputting the pulsed light based on a luminescence trigger signal received from the exposure apparatus; a detector configured to detect a characteristic of the pulsed light; and a data collection processor configured to collect at least a piece of data in data included in a pulse light data group related to the pulsed light detected by the detector and a control data group related to the control, and execute a mapping process of mapping the collected data by at least one of scanning exposure basis and wafer exposure basis.

摘要翻译： 根据实施例的光源装置可以用于通过重复用于暴露每个晶片的总曝光区域的晶片曝光而暴露多个晶片的曝光装置。 晶片曝光可以包括扫描曝光的顺序执行，其中通过用脉冲光扫描每个晶片的总曝光面积所限定的每个划分区域。 该装置可以包括：光源控制器，被配置为基于从曝光装置接收的发光触发信号执行用于输出脉冲光的控制; 检测器，被配置为检测所述脉冲光的特性; 以及数据收集处理器，被配置为收集与由所述检测器检测到的脉冲光有关的脉冲光数据组中包含的数据中的至少一条数据以及与所述控制相关的控制数据组，并执行映射处理 通过扫描曝光基础和晶片曝光基础中的至少一个来收集数据。

公开(公告)号：US20120068091A1

公开(公告)日：2012-03-22

申请号：US13306358

申请日：2011-11-29

申请人： Akira ENDO ,  Krzysztof NOWAK ,  Hideo HOSHINO ,  Tatsuya ARIGA ,  Masato MORIYA ,  Osamu WAKABAYASHI

发明人： Akira ENDO ,  Krzysztof NOWAK ,  Hideo HOSHINO ,  Tatsuya ARIGA ,  Masato MORIYA ,  Osamu WAKABAYASHI

IPC分类号： G21K5/00 ,  H01S3/04

CPC分类号： H05G2/003 ,  H01S3/005 ,  H01S3/0064 ,  H01S3/2316 ,  H05G2/008

摘要： An EUV light source of the present invention is capable of using a saturable absorber stably and continuously in a high heat load state. A saturable absorber (SA) device is disposed on a laser beam line to absorb feeble light, such as self-excited oscillation light, parasitic oscillation light or return light. SA gas from an SA gas cylinder and buffer gas from a buffer gas cylinder are mixed to be a mixed gas. The mixed gas is supplied to an SA gas cell via a supply pipeline, and absorbs the feeble light included in the laser beam. The mixed gas is exhausted via an exhaust pipeline, and is sent to a heat exchanger. The mixed gas, cooled down by a heat exchanger, is sent back to the SA gas cell by a circulation pump.

摘要翻译： 本发明的EUV光源能够在高热负荷状态下稳定且连续地使用饱和吸收体。 可饱和吸收体（SA）装置设置在激光束线上以吸收诸如自激振荡光，寄生振荡光或返回光的微弱光。 来自SA气瓶的SA气体和来自缓冲气瓶的缓冲气体混合成混合气体。 混合气体经由供给管路供给到SA气室，吸收激光束中包含的微弱光。 混合气体通过排气管道排出，并被送到热交换器。 由热交换器冷却的混合气体通过循环泵送回到SA气室。

公开(公告)号：US20090267003A1

公开(公告)日：2009-10-29

申请号：US12469176

申请日：2009-05-20

申请人： Masato MORIYA ,  Osamu WAKABAYASHI ,  Georg SOUMAGNE

发明人： Masato MORIYA ,  Osamu WAKABAYASHI ,  Georg SOUMAGNE

IPC分类号： G21K5/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射以不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

公开(公告)号：US20120305809A1

公开(公告)日：2012-12-06

申请号：US13482857

申请日：2012-05-29

申请人： Masato MORIYA ,  Osamu Wakabayashi

发明人： Masato MORIYA ,  Osamu Wakabayashi

IPC分类号： G21K5/04

CPC分类号： H05G2/008 ,  H05G2/003

摘要： An apparatus for generating extreme ultraviolet light is used with a first laser device for outputting a first laser beam. The apparatus includes a second laser device for outputting a second laser beam, a beam adjusting unit for causing beam axes of the first and second laser beams to substantially coincide with each other, a chamber, a target supply unit for supplying target materials into the chamber, a laser beam focusing optical system for focusing the first laser beam on the target material for plasma generation, an optical detection system for detecting the second laser beam and light from plasma, a focus position correction mechanism for correcting a first laser beam focusing position, and a target supply position correction mechanism for correcting a target material supplying position, and a controller for the focus position correction mechanism and the target supply position correction mechanism based on the optical detection system's detection.

摘要翻译： 用于产生极紫外光的装置与用于输出第一激光束的第一激光装置一起使用。 该装置包括用于输出第二激光束的第二激光装置，用于使第一和第二激光束的光束轴线彼此基本一致的光束调节单元，用于将目标材料供应到腔室中的目标供应单元 用于将第一激光束聚焦在等离子体产生用靶材料上的激光束聚焦光学系统，用于检测第二激光束的光检测系统和来自等离子体的光，用于校正第一激光束聚焦位置的聚焦位置校正机构， 以及用于校正目标材料供给位置的目标供给位置校正机构，以及基于光学检测系统的检测的聚焦位置校正机构和目标供给位置校正机构的控制器。

公开(公告)号：US20110180734A1

公开(公告)日：2011-07-28

申请号：US13081899

申请日：2011-04-07

申请人： Masato MORIYA ,  Tamotsu ABE ,  Takashi SUGANUMA ,  Hiroshi SOMEYA ,  Takayuki YABU ,  Akira SUMITANI ,  Osamu WAKABAYASHI

发明人： Masato MORIYA ,  Tamotsu ABE ,  Takashi SUGANUMA ,  Hiroshi SOMEYA ,  Takayuki YABU ,  Akira SUMITANI ,  Osamu WAKABAYASHI

IPC分类号： H05G2/00

CPC分类号： H05G2/003 ,  H05G2/008

摘要： An EUV light source apparatus can reliably detect and accurately judge deterioration of an optical element in a laser beam focusing optics disposed within an EUV light generation chamber. This EUV light source apparatus includes: the EUV light generation chamber; a target material supply unit; an EUV light collector mirror; a driver laser; a window; a parabolic mirror which focuses collimated laser beam by reflection and is disposed within the EUV light generation chamber; an energy detector detecting energy of the laser beam diffused without being applied to a target material after being focused by the laser beam focusing optics when the EUV light is not generated; and a processing unit for judging the deterioration of the window and the parabolic mirror according to the laser beam energy detected by the energy detector.

摘要翻译： EUV光源装置可以可靠地检测并准确地判断设置在EUV光产生室内的激光束聚焦光学元件中的光学元件的劣化。 该EUV光源装置包括：EUV光产生室; 目标材料供应单位; EUV集光镜; 驱动激光器 一个窗口; 抛物面镜，其通过反射聚焦准直激光束并设置在EUV光产生室内; 能量检测器，当不产生EUV光时，检测在被激光束聚焦光学器件聚焦之后不会施加到目标材料上的激光束的能量扩散; 以及处理单元，用于根据由能量检测器检测的激光束能量来判断窗口和抛物面镜的劣化。

公开(公告)号：US20110309271A1

公开(公告)日：2011-12-22

申请号：US13160033

申请日：2011-06-14

申请人： Masato MORIYA ,  Osamu Wakabayashi

发明人： Masato MORIYA ,  Osamu Wakabayashi

IPC分类号： G21K5/00 ,  F21V9/06

CPC分类号： G21K1/10 ,  G03F7/70191 ,  H01J35/18

摘要： A spectral purity filter may include: a plurality of segments that each includes a mesh in which an array of apertures of an aperture size at or below a predetermined size is formed and which has electroconductivity; and a frame that supports the plurality of the segments at least at a periphery thereof.

摘要翻译： 光谱纯度滤光器可以包括：多个分段，每个分段包括一个网格，其中形成孔径大小为或小于预定尺寸的孔径阵列，并具有导电性; 以及至少在其周边支撑多个片段的框架。

公开(公告)号：US20120256105A1

公开(公告)日：2012-10-11

申请号：US13494778

申请日：2012-06-12

申请人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

发明人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

IPC分类号： G21K5/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

公开(公告)号：US20120248342A1

公开(公告)日：2012-10-04

申请号：US13437678

申请日：2012-04-02

申请人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

发明人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

IPC分类号： G21K5/04

CPC分类号： G02B5/1838 ,  G02B5/0891 ,  G02B5/1857 ,  G03F7/70575 ,  G21K1/065 ,  G21K2201/064

摘要： An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.

摘要翻译： EUV光源被配置为产生用于曝光装置的EUV光。 所述EUV光源包括室，被配置为将靶供给到所述室中的目标供给装置，用于将来自驱动器激光器的激光引入所述室并且用所述激光照射所述靶的光学系统，以将所述靶转换成等离子体 哪个EUV光被发射，并且在室中的EUV收集器反射镜。 EUV收集器反射镜可以包括具有凹槽的多层反射表面并且将来自等离子体的EUV光收集到焦点。 凹槽可以以同心的方式布置，并且被配置为至少衍射与来自驱动器激光器的激光的波长相同的光。

公开(公告)号：US20100140512A1

公开(公告)日：2010-06-10

申请号：US12603872

申请日：2009-10-22

申请人： Takashi SUGANUMA ,  Masato MORIYA ,  Tamotsu ABE ,  Kouji KAKIZAKI ,  Osamu WAKABAYASHI

发明人： Takashi SUGANUMA ,  Masato MORIYA ,  Tamotsu ABE ,  Kouji KAKIZAKI ,  Osamu WAKABAYASHI

IPC分类号： G21K5/00

CPC分类号： G03F7/70891 ,  G03F7/70033 ,  G03F7/70141 ,  G03F7/70175 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70591 ,  G03F7/7085 ,  H05G2/005

摘要： An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.

摘要翻译： 可以检测EUV收集镜的位置或姿势偏移的极紫外（EUV）光源装置。 该装置包括：一个室; 用于将目标材料供应到所述室中的目标供给机构; 用于用激光束照射目标材料以产生等离子体的驱动器激光器; 收集器反射镜，具有第一焦点和第二焦点，用于将在第一焦点处产生的光朝向第二焦点反射; 分离器光学元件，设置在由集光镜反射的光的光路中，用于分离由集光镜反射的一部分光; 以及图像传感器，其设置在由分离光学元件分离的光的光路中，用于检测由分离光学元件分离的光的轮廓。