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158 条记录 (耗时 0.046 秒)

    Negative resists based on acid-catalyzed elimination of polar molecules
    93.
    发明申请
    Negative resists based on acid-catalyzed elimination of polar molecules 失效
    基于酸催化消除极性分子的负电阻

    公开(公告)号：US20070259274A1

    公开(公告)日：2007-11-08

    申请号：US11820862

    申请日：2007-06-20

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  David Medeiros ,  Ratnam Sooriyakumaran

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  David Medeiros ,  Ratnam Sooriyakumaran

    IPC分类号： G03C1/705 ,  G03C5/16

    CPC分类号： G03F7/0046 ,  C08F220/24 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395

    摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

    Low activation energy dissolution modification agents for photoresist applications
    94.
    发明申请
    Low activation energy dissolution modification agents for photoresist applications 有权
    用于光刻胶应用的低活化能溶解改性剂

    公开(公告)号：US20070231734A1

    公开(公告)日：2007-10-04

    申请号：US11239507

    申请日：2005-09-29

    申请人： Robert Allen ,  Phillip Brock ,  Richard DiPietro ,  Ratnam Sooriyakumaran ,  Hoa Truong

    发明人： Robert Allen ,  Phillip Brock ,  Richard DiPietro ,  Ratnam Sooriyakumaran ,  Hoa Truong

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0045 ,  C07J9/005 ,  C07J17/00 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115

    摘要： A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

    摘要翻译： 包含聚合物，光酸产生剂和溶解改性剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图像的方法和溶解改性剂组合物。 溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂， 允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。

    Low-activation energy silicon-containing resist system
    95.
    发明授权
    Low-activation energy silicon-containing resist system 失效
    低活化能含硅抗蚀剂体系

    公开(公告)号：US06939664B2

    公开(公告)日：2005-09-06

    申请号：US10693199

    申请日：2003-10-24

    申请人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

    发明人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

    IPC分类号： G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075 ,  G03E7/004

    CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

    摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

    摘要翻译： 提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分， 用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物在正性抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

    Method for patterning a low activation energy photoresist
    96.
    发明申请
    Method for patterning a low activation energy photoresist 有权
    图案化低活化能光致抗蚀剂的方法

    公开(公告)号：US20050123852A1

    公开(公告)日：2005-06-09

    申请号：US10729452

    申请日：2003-12-04

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/40

    CPC分类号： G03F7/0392 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

    摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译： 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟基烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯烃单体， SUP），和（iii）其组合。 缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Silicon-containing resist systems with cyclic ketal protecting groups
    97.
    发明申请
    Silicon-containing resist systems with cyclic ketal protecting groups 审中-公开
    具有环状缩酮保护基的含硅抗蚀剂体系

    公开(公告)号：US20050106494A1

    公开(公告)日：2005-05-19

    申请号：US10716785

    申请日：2003-11-19

    申请人： Wu-Song Huang ,  Robert Allen ,  Marie Angelopoulos ,  Ranee Kwong ,  Ratnam Sooriyakumaran

    发明人： Wu-Song Huang ,  Robert Allen ,  Marie Angelopoulos ,  Ranee Kwong ,  Ratnam Sooriyakumaran

    IPC分类号： G03F7/039 ,  C08G77/22 ,  G03C1/492 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0757

    摘要： Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

    摘要翻译： 提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的光致抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅倍半硅氧烷聚合物含有侧链溶解性抑制性环状缩酮酸不稳定部分， 具有低活化能的酸催化裂解。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物在正性抗蚀剂组合物中特别有用。 本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。