公开(公告)号：US06939664B2

公开(公告)日：2005-09-06

申请号：US10693199

申请日：2003-10-24

申请人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

发明人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

IPC分类号： G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075 ,  G03E7/004

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

摘要翻译： 提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分， 用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物在正性抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

公开(公告)号：US06927015B2

公开(公告)日：2005-08-09

申请号：US10920762

申请日：2004-08-18

申请人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  G03F7/40 ,  G03F7/11

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US06818381B2

公开(公告)日：2004-11-16

申请号：US10026184

申请日：2001-12-21

申请人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： G03F711

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US06770419B2

公开(公告)日：2004-08-03

申请号：US10241937

申请日：2002-09-11

申请人： Mahmoud M. Khojasteh ,  Ranee W. Kwong ,  Kuang-Jung Chen ,  Pushkara Rao Varanasi ,  Robert D. Allen ,  Phillip Brock ,  Frances Houle ,  Ratnam Sooriyakumaran

发明人： Mahmoud M. Khojasteh ,  Ranee W. Kwong ,  Kuang-Jung Chen ,  Pushkara Rao Varanasi ,  Robert D. Allen ,  Phillip Brock ,  Frances Houle ,  Ratnam Sooriyakumaran

IPC分类号： G03C173

CPC分类号： G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

摘要： The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：US08802347B2

公开(公告)日：2014-08-12

申请号：US12613804

申请日：2009-11-06

申请人： Robert D. Allen ,  Phillip J. Brock ,  Kuang-Jung Chen ,  Alexander Friz ,  Wu-Song Huang ,  Ratnam Sooriyakumaran ,  Sally A. Swanson ,  Hoa D. Truong

发明人： Robert D. Allen ,  Phillip J. Brock ,  Kuang-Jung Chen ,  Alexander Friz ,  Wu-Song Huang ,  Ratnam Sooriyakumaran ,  Sally A. Swanson ,  Hoa D. Truong

IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC分类号： C09D143/04 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/40

摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

摘要翻译： 涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。 还公开了在含有该图案的涂料组合物中形成图案的方法。

公开(公告)号：US20110111345A1

公开(公告)日：2011-05-12

申请号：US12613804

申请日：2009-11-06

申请人： Robert D. Allen ,  Phillip J. Brock ,  Kuang-Jung Chen ,  Alexander Friz ,  Wu-Song Huang ,  Ratnam Sooriyakumaran ,  Sally A. Swanson ,  Hoa D. Truong

发明人： Robert D. Allen ,  Phillip J. Brock ,  Kuang-Jung Chen ,  Alexander Friz ,  Wu-Song Huang ,  Ratnam Sooriyakumaran ,  Sally A. Swanson ,  Hoa D. Truong

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： C09D143/04 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/40

摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.

摘要翻译： 涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。 还公开了在含有该图案的涂料组合物中形成图案的方法。

公开(公告)号：US07944055B2

公开(公告)日：2011-05-17

申请号：US12772451

申请日：2010-05-03

申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： H01L23/48

CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US07919225B2

公开(公告)日：2011-04-05

申请号：US12126287

申请日：2008-05-23

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/038 ,  G03F7/075 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： G03F7/0757 ,  C08L83/14 ,  G03F7/0758 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  C08L83/00

摘要： A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

摘要翻译： 方法和组成。 该组合物包括在酸存在下交联的至少一种碳硅烷取代的倍半硅氧烷聚合物。 所述至少一种碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 该方法包括在基底上形成涂层。 涂层包括一种或多种碳硅烷取代的倍半硅氧烷聚合物。 碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 涂层暴露于辐射，导致在涂层中产生潜在图案。 暴露的涂层在小于约150℃的第一温度下烘烤。烘烤的涂层被显影，从而在烘烤涂层中从潜在图案形成潜像。 潜像在低于约500℃的第二温度下固化

公开(公告)号：US20090291389A1

公开(公告)日：2009-11-26

申请号：US12126287

申请日：2008-05-23

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/075 ,  C08G77/12 ,  G03F7/20

CPC分类号： G03F7/0757 ,  C08L83/14 ,  G03F7/0758 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  C08L83/00

摘要： A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

摘要翻译： 方法和组成。 该组合物包括在酸存在下交联的至少一种碳硅烷取代的倍半硅氧烷聚合物。 所述至少一种碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 该方法包括在基底上形成涂层。 涂层包括一种或多种碳硅烷取代的倍半硅氧烷聚合物。 碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 涂层暴露于辐射，导致在涂层中产生潜在图案。 暴露的涂层在小于约150℃的第一温度下烘烤。烘烤的涂层被显影，从而在烘烤涂层中从潜在图案形成潜像。 潜像在低于约500℃的第二温度下固化

公开(公告)号：US08470516B2

公开(公告)日：2013-06-25

申请号：US12542821

申请日：2009-08-18

申请人： Robert D. Allen ,  Luisa Bozano ,  Phillip Brock ,  Qinghuang Lin ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Luisa Bozano ,  Phillip Brock ,  Qinghuang Lin ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/00 ,  G03F7/26

CPC分类号： G03F7/038 ,  G03F7/0757 ,  G03F7/2059 ,  G03F7/40

摘要： A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.

摘要翻译： 产生浮雕图案的方法包括将抗蚀剂组合物设置在基底上以形成膜，抗蚀剂组合物包含式（1）的第一倍半硅氧烷聚合物：式（2）的第二倍半硅氧烷聚合物：和光敏酸 发电机; 通过电子束光刻对图案进行图案曝光; 加热暴露的膜以在暴露的区域中实现第一聚合物和第二聚合物的交联; 并将曝光的胶片显影形成负浮雕图案。