公开(公告)号：US12199186B2

公开(公告)日：2025-01-14

申请号：US18378688

申请日：2023-10-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi Okazaki ,  Masami Jintyou ,  Kensuke Yoshizumi

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.

公开(公告)号：US12166134B2

公开(公告)日：2024-12-10

申请号：US17433458

申请日：2020-02-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/49 ,  G02F1/1368 ,  H10K59/121

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with high reliability is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are stacked in this order over the first insulating layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US12098458B2

公开(公告)日：2024-09-24

申请号：US17730516

申请日：2022-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masashi Tsubuku

IPC: H01L27/12 ,  C23C14/08 ,  C23C14/34 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01L29/04 ,  H01L29/786

CPC classification number: C23C14/08 ,  C23C14/34 ,  C23C14/3414 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.

公开(公告)号：US11997859B2

公开(公告)日：2024-05-28

申请号：US17941148

申请日：2022-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L51/50 ,  H01L27/12 ,  H10K50/11 ,  H10K59/121 ,  H10K59/126 ,  H10K59/131 ,  H10K77/10 ,  H01L29/786

CPC classification number: H10K50/11 ,  H01L27/12 ,  H01L27/1225 ,  H10K59/1213 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111 ,  H01L27/124 ,  H01L29/78678 ,  H01L29/7869

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

公开(公告)号：US11929412B2

公开(公告)日：2024-03-12

申请号：US17866822

申请日：2022-07-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima ,  Kenichi Okazaki

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/42364 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US11721769B2

公开(公告)日：2023-08-08

申请号：US17743956

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/823412 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11557612B2

公开(公告)日：2023-01-17

申请号：US17037769

申请日：2020-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US11543718B2

公开(公告)日：2023-01-03

申请号：US17580742

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US11538928B2

公开(公告)日：2022-12-27

申请号：US17330589

申请日：2021-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L27/12

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US11531243B2

公开(公告)日：2022-12-20

申请号：US17562070

申请日：2021-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.