公开(公告)号：US09349775B2

公开(公告)日：2016-05-24

申请号：US14819550

申请日：2015-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US09093262B2

公开(公告)日：2015-07-28

申请号：US14083485

申请日：2013-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Miyuki Hosoba ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  G02F1/133528 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/133302 ,  G02F2001/133531 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L21/02107 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/324 ,  H01L21/477 ,  H01L21/67115 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

Abstract translation: 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

公开(公告)号：US09054205B2

公开(公告)日：2015-06-09

申请号：US14064294

申请日：2013-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takatsugu Omata ,  Tatsuya Honda ,  Akiharu Miyanaga ,  Hiroki Ohara

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/26 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/263 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

Abstract: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

Abstract translation: 提供具有新颖结构的半导体器件或半导体器件的制造方法。 例如，提高了以高电压或大电流驱动的晶体管的可靠性。 为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面 （或源电极层），从而缓冲层能够缓和电场的集中。 缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

公开(公告)号：US09054137B2

公开(公告)日：2015-06-09

申请号：US14143542

申请日：2013-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/16 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US08697488B2

公开(公告)日：2014-04-15

申请号：US13967605

申请日：2013-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

公开(公告)号：US08669579B2

公开(公告)日：2014-03-11

申请号：US13875491

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L33/00

CPC classification number: H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US20130234132A1

公开(公告)日：2013-09-12

申请号：US13860812

申请日：2013-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

IPC: H01L29/786

CPC classification number: H01L27/3262 ,  G06F1/163 ,  H01L21/02614 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H04B1/16

Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

公开(公告)号：US08513054B2

公开(公告)日：2013-08-20

申请号：US13767335

申请日：2013-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

公开(公告)号：US08513053B2

公开(公告)日：2013-08-20

申请号：US13758141

申请日：2013-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC: H01L21/34

CPC classification number: H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

Abstract translation: 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。

公开(公告)号：US20130095588A1

公开(公告)日：2013-04-18

申请号：US13692723

申请日：2012-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Hiroki Ohara ,  Masayo Kayama

IPC: H01L29/66

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.

Abstract translation: 半导体器件包括具有第一薄膜晶体管的像素部分和具有第二薄膜晶体管的驱动器电路。 第一薄膜晶体管和第二薄膜晶体管中的每一个包括栅极电极层，栅极绝缘层，半导体层，源极电极层和漏极电极层。 第一薄膜晶体管的每个层具有透光性。 第一薄膜晶体管的栅极电极层，源电极层和漏电极层的材料与第二晶体管的材料不同，第二薄膜晶体管的电阻低于第一薄膜晶体管的电阻 薄膜晶体管。