公开(公告)号：US20150011046A1

公开(公告)日：2015-01-08

申请号：US14313145

申请日：2014-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Takayuki INOUE ,  Shunpei YAMAZAKI

IPC: H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract translation: 提供其中调整阈值电压的半导体器件的制造方法。 半导体器件包括第一半导体，电连接到第一半导体的电极，栅极电极和栅电极和第一半导体之间的电子陷阱层。 通过进行高于或等于125℃且低于或等于450℃的热处理，并且同时保持栅电极的电位高于电极的电位1秒以上 ，阈值电压增加。

公开(公告)号：US20140103337A1

公开(公告)日：2014-04-17

申请号：US14054078

申请日：2013-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Tetsuhiro TANAKA

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/78

CPC classification number: H01L21/02565 ,  H01L21/02617 ,  H01L21/02631 ,  H01L27/1156 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed.

Abstract translation: 通过抑制其电特性的变化来提供包括氧化物半导体的高度可靠的半导体器件。 氧气由设置在氧化物半导体层下方的基底绝缘层和设置在氧化物半导体层上的栅极绝缘层提供到形成沟道的区域，从而填充可能在沟道中产生的氧空位。 此外，通过在氧化物半导体层中形成的沟道附近的源极电极层或漏极电极层从氧化物半导体层提取氧被抑制，由此抑制在沟道中可能产生的氧空位。

公开(公告)号：US20140027764A1

公开(公告)日：2014-01-30

申请号：US13947724

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。

公开(公告)号：US20130234131A1

公开(公告)日：2013-09-12

申请号：US13780325

申请日：2013-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI

IPC: H01L29/786

CPC classification number: H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.

Abstract translation: 提供了具有稳定的电气特性和高可靠性的半导体器件。 半导体器件包括绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，栅极绝缘膜上方并与栅电极重叠的半导体膜，以及半导体膜上的保护绝缘膜; 并且所述保护绝缘膜在所述结晶绝缘膜上包括结晶绝缘膜和氧化铝膜。

公开(公告)号：US20130126861A1

公开(公告)日：2013-05-23

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI ,  Yuki IMOTO ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/36

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。