公开(公告)号：US07667222B2

公开(公告)日：2010-02-23

申请号：US11214866

申请日：2005-08-31

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： H01L41/04 ,  H01L41/06 ,  H01L45/00

CPC分类号： G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

摘要： A phase change memory comprises a phase-change recording layer for recording information through changing between a crystal phase and an amorphous phase; and a means for applying a tensile strain onto the phase-change recording layer, thereby providing the memory having high reliability, as well as, high tolerance or durability against repetitive rewriting operation.

摘要翻译： 相变存储器包括用于通过在晶相和非晶相之间改变来记录信息的相变记录层; 以及用于在相变记录层上施加拉伸应变的装置，从而提供具有高可靠性的存储器，以及对重复重写操作的高耐受性或耐久性。

公开(公告)号：US20090256261A1

公开(公告)日：2009-10-15

申请号：US12489006

申请日：2009-06-22

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/522

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US20080297947A1

公开(公告)日：2008-12-04

申请号：US12127856

申请日：2008-05-28

申请人： Yasutaka Okura ,  Tomio Iwasaki

发明人： Yasutaka Okura ,  Tomio Iwasaki

IPC分类号： G11B5/82 ,  B05D5/12

CPC分类号： G11B5/855

摘要： The present invention provides a magnetic disk in a discrete track medium and a patterned medium, which prevents the loss of the magnetically recorded data when a head of a magnetic disk device contacts the magnetic disk, and a manufacturing method thereof. A magnetic disk has a protrusion as a non-magnetic member formed on a disk surface to prevent a head from being in contact with a recording section. When the protrusion formed in a disk substrate collides against the head, the protrusion 7 does not collapse, and accordingly, the recording layer is not damaged. Alternatively, concave and convex portions are formed on the substrate surface to use the convex portion as the protrusion.

摘要翻译： 本发明提供了一种分立轨道介质中的磁盘和图案化介质，其防止当磁盘装置的磁头与磁盘接触时磁记录数据的损失及其制造方法。 磁盘具有作为形成在盘表面上的非磁性构件的突起，以防止头部与记录部分接触。 当形成在盘基板上的突起与头部碰撞时，突起7不会折叠，因此记录层不被损坏。 或者，在基板表面上形成凹凸部，使用凸部作为突出部。

公开(公告)号：US20080144218A1

公开(公告)日：2008-06-19

申请号：US11956424

申请日：2007-12-14

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： G11B5/74

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/72 ,  G11B5/743 ,  G11B5/855

摘要： A patterned magnetic medium includes: a substrate; a soft magnetic underlying film, a nonmagnetic film, an intermediate film and a recording layer which are formed on a principal surface of the substrate; a first protective film formed in contact with the recording film; a second protective film formed in contact with the first protective film; and a third protective film formed in contact with the second protective film. Moreover, the recording layer has a pattern structure formed by making a magnetic film come into contact with a concavo-convex pattern of a nonmagnetic material. The first protective film and the third protective film include carbon as the main constituent element and the second protective film is a wet-coated polymer film. High adhesion between carbon and the wet-coated polymer film can prevent peeling off and the wet-coated polymer film as a cushioning material absorbs impact.

摘要翻译： 图案化磁介质包括：基板; 形成在基板的主表面上的软磁性底膜，非磁性膜，中间膜和记录层; 形成为与记录膜接触的第一保护膜; 形成为与第一保护膜接触的第二保护膜; 和与第二保护膜接触形成的第三保护膜。 此外，记录层具有通过使磁性膜与非磁性材料的凹凸图案接触而形成的图案结构。 第一保护膜和第三保护膜包括碳作为主要构成元素，第二保护膜是湿涂聚合物膜。 碳与湿涂层聚合物膜之间的高附着力可以防止剥离，并且作为缓冲材料的湿涂聚合物膜吸收冲击。

公开(公告)号：US20070170413A1

公开(公告)日：2007-07-26

申请号：US11596220

申请日：2005-05-09

申请人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

发明人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

IPC分类号： H01L29/04

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

摘要翻译： 由于这种材料对高熔点金属和氧化硅膜具有低粘附性，所以相变存储器的制造过程已经受到硫属化物材料易于分层的问题的困扰。 此外，硫族化物材料具有低的热稳定性，因此在相变存储器的制造过程中倾向于升华。 根据本发明，在硫族化物材料层上和下方形成导电或绝缘粘合剂层以增强其分层强度。 此外，在硫族化物材料层的侧壁上形成由氮化物膜构成的保护膜，以防止硫属化物材料层的升华。

公开(公告)号：US20060088734A1

公开(公告)日：2006-04-27

申请号：US11243012

申请日：2005-10-03

申请人： Reiko Arai ,  Yoshiyuki Hirayama ,  Yuzuru Hosoe ,  Tomio Iwasaki ,  Yoko Ogawa ,  Ikuko Takekuma

发明人： Reiko Arai ,  Yoshiyuki Hirayama ,  Yuzuru Hosoe ,  Tomio Iwasaki ,  Yoko Ogawa ,  Ikuko Takekuma

IPC分类号： G11B5/66 ,  B05D5/12

CPC分类号： G11B5/732 ,  G11B5/656 ,  G11B5/851

摘要： Embodiments of the invention are directed to a medium which provides high media S/N and good corrosion resistance. According to one embodiment, in a perpendicular magnetic recording medium at least comprising a soft-magnetic underlayer, a seed layer, an intermediate layer, a magnetic recording layer and an overcoat layer which are stacked over a substrate in order, the magnetic recording layer has a granular structure which includes many columnar grains of CoCrPt alloy and a grain boundary layer containing an oxide, the seed layer is made of TaNi alloy or TaTi alloy and the intermediate layer is made of Ru or Ru alloy which contains 80 at. % Ru or more.

公开(公告)号：US08859344B2

公开(公告)日：2014-10-14

申请号：US13314154

申请日：2011-12-07

申请人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

发明人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

IPC分类号： H01L21/82 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

公开(公告)号：US20120077325A1

公开(公告)日：2012-03-29

申请号：US13314154

申请日：2011-12-07

申请人： YUICHI MATSUI ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

发明人： YUICHI MATSUI ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

IPC分类号： H01L21/20

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

摘要翻译： 由于这种材料对高熔点金属和氧化硅膜具有低粘附性，所以相变存储器的制造过程已经受到硫属化物材料易于分层的问题的困扰。 此外，硫族化物材料具有低的热稳定性，因此在相变存储器的制造过程中倾向于升华。 根据本发明，在硫族化物材料层上和下方形成导电或绝缘粘合剂层以增强其分层强度。 此外，在硫族化物材料层的侧壁上形成由氮化物膜构成的保护膜，以防止硫属化物材料层的升华。

公开(公告)号：US07965022B2

公开(公告)日：2011-06-21

申请号：US12582723

申请日：2009-10-21

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： H01L41/047 ,  H01L41/083

CPC分类号： H01L41/083 ,  H01L41/0471 ,  H01L41/0472 ,  H01L41/1871

摘要： A piezoelectric element that is high in piezoelectric performance and large in displacement and is reliable is provided. The piezoelectric element includes a piezoelectric material containing BaTi2O5 as the principal constituent material and an inner electrode that applies voltage to the piezoelectric material. In this piezoelectric element, an electrode material (a mixture of Ru and RuO2) excellent in lattice matching with the piezoelectric material BaTi2O5 is used as the principal constituent material of the inner electrode.

摘要翻译： 提供压电性能高，位移大且可靠的压电元件。 压电元件包括​​含有BaTi2O5作为主要构成材料的压电材料和向压电材料施加电压的内部电极。 在该压电元件中，使用与压电体BaTi2O5的晶格匹配优异的电极材料（Ru和RuO2的混合物）作为内部电极的主要构成材料。

公开(公告)号：US07777343B2

公开(公告)日：2010-08-17

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。