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公开(公告)号：US20060226555A1
公开(公告)日：2006-10-12
申请号：US11449814
申请日：2006-06-09
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L23/48
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US07777343B2
公开(公告)日：2010-08-17
申请号：US11449814
申请日：2006-06-09
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L23/52
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US20090256261A1
公开(公告)日：2009-10-15
申请号：US12489006
申请日：2009-06-22
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L23/522
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US20120015514A1
公开(公告)日：2012-01-19
申请号：US13243882
申请日：2011-09-23
申请人： JUNJI NOGUCHI , Takayushi Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： JUNJI NOGUCHI , Takayushi Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L21/768
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US07323781B2
公开(公告)日：2008-01-29
申请号：US10807222
申请日：2004-03-24
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US08053893B2
公开(公告)日：2011-11-08
申请号：US12489006
申请日：2009-06-22
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L23/52
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。
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公开(公告)号：US08431480B2
公开(公告)日：2013-04-30
申请号：US13243882
申请日：2011-09-23
申请人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
发明人： Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76811 , H01L21/314 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76813 , H01L21/76814 , H01L21/76822 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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公开(公告)号：US20060258149A1
公开(公告)日：2006-11-16
申请号：US11485976
申请日：2006-07-14
申请人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
发明人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31629 , H01L21/3185 , H01L21/76801 , H01L21/76811 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor integrated circuit device is provided including forming a first insulating film comprised of fluorine-containing silicon oxide over a main surface of a semiconductor substrate is formed together with forming a second insulating film comprising silicon oxide as a major component, forming a third insulating film comprising silicon carbide as a major component, and forming a fourth insulating film comprised of fluorine-containing silicon oxide. The fourth insulating film is removed at a wiring groove-forming region thereof by dry etching using a first photoresist film as a mask. A first conductive layer is buried inside the wiring groove and the first conductive layer is removed from outside of the wiring groove by a chemical mechanical polishing method, thereby forming a first wiring including the first conductive layer inside the wiring groove.
摘要翻译： 提供一种制造半导体集成电路器件的方法，包括在半导体衬底的主表面上形成由含氟氧化硅构成的第一绝缘膜，同时形成包含氧化硅作为主要成分的第二绝缘膜，形成 以碳化硅为主要成分的第三绝缘膜，形成由含氟氧化硅构成的第四绝缘膜。 通过使用第一光致抗蚀剂膜作为掩模的干蚀刻在其布线槽形成区域处除去第四绝缘膜。 第一导电层被埋在布线槽内部，并且通过化学机械抛光方法从布线槽的外部去除第一导电层，从而在布线槽内形成包括第一导电层的第一布线。
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公开(公告)号：US07282434B2
公开(公告)日：2007-10-16
申请号：US11485976
申请日：2006-07-14
申请人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
发明人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31629 , H01L21/3185 , H01L21/76801 , H01L21/76811 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor integrated circuit device is provided including forming a first insulating film comprised of fluorine-containing silicon oxide over a main surface of a semiconductor substrate is formed together with forming a second insulating film comprising silicon oxide as a major component, forming a third insulating film comprising silicon carbide as a major component, and forming a fourth insulating film comprised of fluorine-containing silicon oxide. The fourth insulating film is removed at a wiring groove-forming region thereof by dry etching using a first photoresist film as a mask. A first conductive layer is buried inside the wiring groove and the first conductive layer is removed from outside of the wiring groove by a chemical mechanical polishing method, thereby forming a first wiring including the first conductive layer inside the wiring groove.
摘要翻译： 提供一种制造半导体集成电路器件的方法，包括在半导体衬底的主表面上形成由含氟氧化硅构成的第一绝缘膜，同时形成包含氧化硅作为主要成分的第二绝缘膜，形成 以碳化硅为主要成分的第三绝缘膜，形成由含氟氧化硅构成的第四绝缘膜。 通过使用第一光致抗蚀剂膜作为掩模的干蚀刻在其布线槽形成区域处去除第四绝缘膜。 第一导电层被埋在布线槽内部，并且通过化学机械抛光方法从布线槽的外部去除第一导电层，从而在布线槽内形成包括第一导电层的第一布线。
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公开(公告)号：US20050151262A1
公开(公告)日：2005-07-14
申请号：US11056224
申请日：2005-02-14
申请人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
发明人： Tsuyoshi Tamaru , Kazutoshi Oomori , Noriko Miura , Hideo Aoki , Takayuki Oshima
IPC分类号： H01L23/522 , H01L21/304 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/8238 , H01L23/532 , H01L27/092 , H01L23/48
CPC分类号： H01L21/76834 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31629 , H01L21/3185 , H01L21/76801 , H01L21/76811 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.
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