公开(公告)号：US20060226555A1

公开(公告)日：2006-10-12

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US20090256261A1

公开(公告)日：2009-10-15

申请号：US12489006

申请日：2009-06-22

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/522

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US07777343B2

公开(公告)日：2010-08-17

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US07323781B2

公开(公告)日：2008-01-29

申请号：US10807222

申请日：2004-03-24

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US08053893B2

公开(公告)日：2011-11-08

申请号：US12489006

申请日：2009-06-22

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US08431480B2

公开(公告)日：2013-04-30

申请号：US13243882

申请日：2011-09-23

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US20080230916A1

公开(公告)日：2008-09-25

申请号：US12126386

申请日：2008-05-23

申请人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

发明人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

IPC分类号： H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection. The connecting conductor portion for relay is sized so that the length of the connecting conductor portion for relay in an extending direction of the predetermined buried interconnection is longer than that of the connecting hole.

摘要翻译： 半导体IC器件包括在半导体衬底上的互连层中的埋入互连，其中互连层的电连接在互连层之间设置在嵌入式互连的互连层之上和之下，使得连接孔内的第一连接导体部分 从上互连延伸到预定埋地布线的互连层，并且连接孔内的第二连接导体部分从下互连延伸到预定埋地互连的互连层，经由用于继电器的连接导体部分电连接 互连层的连接槽。 继电器的连接导体部分的尺寸设定成使得用于继电器的连接导体部分在预定的埋入互连的延伸方向上的长度比连接孔的长度长。

公开(公告)号：US07387957B2

公开(公告)日：2008-06-17

申请号：US11058601

申请日：2005-02-16

申请人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

发明人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a fabrication process of a semiconductor integrated circuit device, upon effecting connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers formed, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

摘要翻译： 在半导体集成电路器件的制造工艺中，在实现由铝或铝合金构成的互连和由Cu或Cu合金制成的另一互连的连接时，在这些互连之间的接合部分处设置阻挡导体膜或插塞。 在形成的互连层中，最上面的一个由诸如铝或铝合金的布线材料制成，而下层由Cu或Cu合金制成。 最低的互连由不是Cu或Cu合金的导电材料制成。 例如，采用允许微小加工且具有低电阻和高电阻电阻（如钨）的导电材料。

公开(公告)号：US06861756B2

公开(公告)日：2005-03-01

申请号：US10797017

申请日：2004-03-11

申请人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

发明人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower, one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

摘要翻译： 在半导体集成电路器件中，在连接由铝或铝合金制成的互连以及由Cu或Cu合金制成的另一个互连时，在这些互连之间的接合部分处设置阻挡导体膜或插塞。 在互连层中，最上面的一个由诸如铝或铝合金的布线材料制成，而下层由Cu或Cu合金制成。 最低的互连由不是Cu或Cu合金的导电材料制成。 例如，采用允许微小加工且具有低电阻和高电阻电阻（如钨）的导电材料。

公开(公告)号：US06731007B1

公开(公告)日：2004-05-04

申请号：US09613138

申请日：2000-07-10

申请人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

发明人： Tatsuyuki Saito ,  Junji Noguchi ,  Hizuru Yamaguchi ,  Nobuo Owada

IPC分类号： H01L2348

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

摘要翻译： 在半导体集成电路器件中，在连接由铝或铝合金制成的互连以及由Cu或Cu合金制成的另一个互连时，在这些互连之间的接合部分处设置阻挡导体膜或插塞。 在互连层中，最上面的一个由诸如铝或铝合金的布线材料制成，而下层由Cu或Cu合金制成。 最低的互连由不是Cu或Cu合金的导电材料制成。 例如，采用允许微小加工且具有低电阻和高电阻电阻（如钨）的导电材料。