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217 条记录 (耗时 0.046 秒)

    Positive resist compositions and patterning process
    91.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US08021822B2

    公开(公告)日：2011-09-20

    申请号：US12355072

    申请日：2009-01-16

    申请人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/122

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, m is 1 or 2, and n is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。 其中R1为H或甲基，m为1或2，n为1或2。

    Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
    95.
    发明申请
    Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
    新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法

    公开(公告)号：US20070099113A1

    公开(公告)日：2007-05-03

    申请号：US11588414

    申请日：2006-10-27

    申请人： Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe ,  Masaki Ohashi

    发明人： Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe ,  Masaki Ohashi

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0045 ,  C07C309/08 ,  C07C381/12 ,  G03F7/0392 ,  Y10S430/114 ,  Y10S430/115

    摘要： Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

    摘要翻译： 磺酸盐具有下式：CF 3 -CH（OH）-CF 2 SO 3 SO 2 - > + +其中M + +是Li，Na，K，铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基，所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好，包括涂层，预烘烤，曝光，曝光后烘烤和显影步骤。 在ArF浸没光刻期间，光致酸发生器几乎不受水晶体上剩余的水分的影响。

    Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process
    100.
    发明申请
    Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process 有权
    具有磺酰胺结构的聚合酯，聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20050003303A1

    公开(公告)日：2005-01-06

    申请号：US10864424

    申请日：2004-06-10

    申请人： Takeru Watanabe ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/027 ,  G03F7/028 ,  G03F7/039

    CPC分类号： G03F7/0397 ,  G03F7/0395

    摘要： Novel ester compounds having a sulfonamide structure are polymerizable into polymers having improved transparency at wavelength of up to 300 nm, especially ArF excimer laser light, and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.

    摘要翻译： 具有磺酰胺结构的新型酯化合物可聚合成在高达300nm的波长下具有改善的透明度的聚合物，特别是ArF准分子激光和耐干蚀刻性。 包含聚合物的抗蚀剂组合物对高能量辐射敏感，具有高分辨率，并且借助电子束或深紫外线照射微图案。