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    Methods of forming a microlens array over a substrate
    91.
    发明申请
    Methods of forming a microlens array over a substrate 审中-公开
    在衬底上形成微透镜阵列的方法

    公开(公告)号：US20050208432A1

    公开(公告)日：2005-09-22

    申请号：US10805115

    申请日：2004-03-19

    申请人： John Conley ,  Yoshi Ono ,  Wei Gao

    发明人： John Conley ,  Yoshi Ono ,  Wei Gao

    IPC分类号： G02B3/00 ,  H01L27/14 ,  H04N1/028

    CPC分类号： H01L27/14685 ,  G02B3/0012 ,  H01L27/14627

    摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing and patterning a photoresist layer overlying the transparent material to form openings to expose the transparent material; introducing a first isotropic etchant into the openings and etching the transparent material where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the transparent material to a second isotropic etchant to increase the radius of the lens shapes; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. An embodiment of the CCD array comprises an array of CCD pixels on a substrate; and a lens array in contact with the array of CCD pixels; wherein the lens array comprises a transparent material having concave indentations, and a lens material at least partially filling the concave indentations forming a plano-convex lens in contact with the transparent material.

    摘要翻译： 提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。 该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积和图案化覆盖透明材料的光致抗蚀剂层以形成露出透明材料的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露以形成具有半径的初始透镜形状的透明材料; 剥离光刻胶; 将透明材料暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。 CCD阵列的一个实施例包括衬底上的CCD像素阵列; 以及与CCD像素阵列接触的透镜阵列; 其中所述透镜阵列包括具有凹陷痕的透明材料，以及透镜材料，其至少部分地填充形成与所述透明材料接触的平凸透镜的所述凹陷痕。

    MOSFET threshold voltage tuning with metal gate stack control
    93.
    发明授权
    MOSFET threshold voltage tuning with metal gate stack control 有权
    MOSFET栅极电压调谐采用金属栅极堆栈控制

    公开(公告)号：US06861712B2

    公开(公告)日：2005-03-01

    申请号：US10345744

    申请日：2003-01-15

    申请人： Wei Gao ,  Yoshi Ono

    发明人： Wei Gao ,  Yoshi Ono

    IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/4958 ,  H01L21/28079 ,  H01L21/823842

    摘要： A stacked metal gate MOSFET and fabrication method are provided. The method comprises: forming a gate oxide layer overlying a channel region; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer; and, establishing a gate work function in response to the combination of the first and second thicknesses. In one example, the first metal layer has a thickness of less than about 1.5 nanometers (nm) the second metal layer has a thickness greater than about 10 nm. Then, establishing a gate work function includes establishing a gate work function substantially in response to the second metal second thickness. Alternately, the first metal thickness is greater than about 20 nm. Then, the gate work function is established substantially in response to the first metal thickness.

    摘要翻译： 提供堆叠金属栅极MOSFET及其制造方法。 该方法包括：形成覆盖沟道区的栅氧化层; 形成具有覆盖所述栅极氧化物层的第一厚度的第一金属层; 形成具有覆盖在第一金属层上的第二厚度的第二金属层; 并且响应于第一和第二厚度的组合建立门功函数。 在一个示例中，第一金属层具有小于约1.5纳米（nm）的厚度，第二金属层具有大于约10nm的厚度。 然后，建立闸门功能包括基本上响应于第二金属第二厚度建立门功函数。 或者，第一金属厚度大于约20nm。 然后，基本上响应于第一金属厚度建立浇口功函数。

    Synthesis of high T.sub.C superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys
    94.
    发明授权
    Synthesis of high T.sub.C superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys 失效
    通过金属前体合金的熔融书写和氧化合成高TC超导涂层和图案

    公开(公告)号：US5786306A

    公开(公告)日：1998-07-28

    申请号：US696973

    申请日：1991-05-01

    申请人： Wei Gao ,  John B. Vander Sande

    发明人： Wei Gao ,  John B. Vander Sande

    IPC分类号： H01L39/24 ,  H05K3/12

    CPC分类号： H01L39/2451 ,  H05K3/1241 ,  Y10S505/818 ,  Y10T29/49014

    摘要： A method is provided for fabrication of superconducting oxides and superconducting oxide composites and for joining superconductors to other materials. A coating of a molten alloy containing the metallic elements of the oxide is applied to a substrate surface and oxidized to form the superconducting oxide. A material can be contacted to the molten alloy which is subsequently oxidized joining the material to the resulting superconducting oxide coating. Substrates of varied composition and shape can be coated or joined by this method.

    摘要翻译： 提供了用于制造超导氧化物和超导氧化物复合材料并将超导体连接到其它材料的方法。 将含有氧化物的金属元素的熔融合金的涂层施加到基材表面并氧化形成超导氧化物。 材料可以与熔融合金接触，熔融合金随后被氧化，连接到所得的超导氧化物涂层上。 可以通过该方法涂覆或接合不同组成和形状的基材。

    Eyewear retainer
    95.
    外观设计
    Eyewear retainer 有权

    公开(公告)号：USD1026078S1

    公开(公告)日：2024-05-07

    申请号：US29861892

    申请日：2022-12-05

    申请人： Wei Gao

    设计人： Wei Gao

    摘要： FIG. 1 is a front perspective view of an eyewear retainer, showing my new design;
    FIG. 2 is a rear perspective view thereof;
    FIG. 3 is a front elevation view thereof;
    FIG. 4 is a rear elevation view thereof;
    FIG. 5 is a left side view, the right side view being a mirror image of FIG. 5;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken lines in the figures depict portions of the eyewear retainer, that form no part of the claimed design. The article is shown with a symbolic break in its length. The appearance of any portion of the article between the break lines forms no part of the claimed design.

    Advertising player
    96.
    外观设计
    Advertising player 有权

    公开(公告)号：USD971918S1

    公开(公告)日：2022-12-06

    申请号：US29778028

    申请日：2021-04-09

    申请人： Wei Gao

    设计人： Wei Gao

    Occupancy detector switch
    100.
    发明授权
    Occupancy detector switch 有权
    占用检测开关

    公开(公告)号：US08373125B2

    公开(公告)日：2013-02-12

    申请号：US12871264

    申请日：2010-08-30

    申请人： Lidong Ni ,  Chongguang Zhang ,  Wei Gao

    发明人： Lidong Ni ,  Chongguang Zhang ,  Wei Gao

    IPC分类号： G01J5/02

    CPC分类号： H05B37/0227

    摘要： A sensor switch includes an infrared sensor, and a control unit coupled to the infrared sensor and configured to receive a signal corresponding to an object detected by the infrared sensor, wherein the control unit is configured to enable an ON state of a device under control of the sensor switch for a period of time depending on a duration and a strength of the signal from the infrared sensor.

    摘要翻译： 传感器开关包括红外传感器，以及耦合到红外传感器并被配置为接收与由红外传感器检测到的物体相对应的信号的控制单元，其中控制单元被配置为使得能够控制的设备的接通状态 传感器开关一段时间取决于持续时间和来自红外传感器的信号的强度。