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174 条记录 (耗时 0.037 秒)

    Perpendicular magnetic writer with magnetic potential control shield
    91.
    发明授权
    Perpendicular magnetic writer with magnetic potential control shield 失效
    具有磁势控制屏蔽的垂直磁性写入器

    公开(公告)号：US07106554B2

    公开(公告)日：2006-09-12

    申请号：US10411345

    申请日：2003-04-10

    申请人： Lijie Guan ,  Hung Liang Hu ,  Yaw Shing Tang ,  Kochan Ju

    发明人： Lijie Guan ,  Hung Liang Hu ,  Yaw Shing Tang ,  Kochan Ju

    IPC分类号： G11B5/11 ,  G11B5/187

    CPC分类号： G11B5/3146 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3116 ,  G11B2005/0013 ,  G11B2005/0029

    摘要： Conventional perpendicular writers that utilize an extended return pole are subject to large undershoot fields. This problem has been reduced by replacing the prior art extended return pole by one whose magnetic potential has been increased relative to both the main and return poles. In a first embodiment, a second non-magnetic gap is inserted between the extended return pole and the return pole. In a second embodiment, the extended return pole is made very thin, thereby increasing its reluctance, while a third embodiment combines both reluctance-increasing features in a single design.

    摘要翻译： 使用延伸返回极的常规垂直写入器受到大的下冲场。 通过将现有技术的延伸返回极替换为相对于主极和返回极两者的磁势已经增加的极点，已经减少了这个问题。 在第一实施例中，第二非磁隙插入延伸的返回极和返回极之间。 在第二实施例中，扩展的返回极被制成非常薄，从而增加其磁阻，而第三实施例在单一设计中组合磁阻增加特征。

    Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell
    93.
    发明授权
    Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell 有权
    具有三个或更多个堆叠式触发存储器单元的磁性随机存取存储器以及用于写入所选单元的方法

    公开(公告)号：US06992910B1

    公开(公告)日：2006-01-31

    申请号：US11185331

    申请日：2005-07-20

    申请人： Kochan Ju ,  Oletta Allegranza

    发明人： Kochan Ju ,  Oletta Allegranza

    IPC分类号： G11C7/00

    CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226

    摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.

    摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个存储器堆栈位于两个正交写入线之间的交叉区域。 堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开 堆栈中的SAF自由层。 堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。 可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

    Synthetic free layer for CPP GMR
    95.
    发明授权
    Synthetic free layer for CPP GMR 失效
    CPP GMR的合成自由层

    公开(公告)号：US06953601B2

    公开(公告)日：2005-10-11

    申请号：US10167859

    申请日：2002-06-11

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L43/10 ,  B05D5/00 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

    摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.

    摘要翻译： 为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。 然而，自由层的减薄降低了GMR比并导致差的热稳定性。 通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。 可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。 还描述了制造该结构的方法。

    Magnetic random access memory with stacked toggle memory cells
    96.
    发明授权
    Magnetic random access memory with stacked toggle memory cells 有权
    带随机存取存储单元的磁性随机存取存储器

    公开(公告)号：US06937497B1

    公开(公告)日：2005-08-30

    申请号：US10991993

    申请日：2004-11-18

    申请人： Kochan Ju ,  Oletta Allegranza

    发明人： Kochan Ju ,  Oletta Allegranza

    IPC分类号： G11C11/15 ,  G11C11/16

    CPC分类号： G11C11/16

    摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.

    摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个存储器堆栈位于两个正交写入线之间的交叉区域。 堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开 堆栈中的SAF自由层。 堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。 可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

    CPP GMR synthetic spin valve enhancement
    98.
    发明授权
    CPP GMR synthetic spin valve enhancement 有权
    CPP GMR合成自旋阀增强

    公开(公告)号：US06903904B2

    公开(公告)日：2005-06-07

    申请号：US10277453

    申请日：2002-10-22

    申请人： Min Li ,  Kochan Ju ,  Simon Liao

    发明人： Min Li ,  Kochan Ju ,  Simon Liao

    IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49044

    摘要： In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.

    摘要翻译： 在目前的合成固定CPP SV设计中，AP2总是对器件的GMR做出负面的贡献，因为它的磁化方向必须反平行于固定层（AP1）。 通过用形成多层结构的多层结构替代形成合成钉扎层的一部分的常规单层AP2，已经减少了这种效果，其中已经插入至少一层诸如钽的材料，其用于使电子的自旋去极化 遍历其界面。 结果是减少AP2的负面贡献，导致GMR比例的显着增加。

    Spin valve head having lead overlay
    100.
    发明授权
    Spin valve head having lead overlay 失效
    旋转阀头具有铅覆盖

    公开(公告)号：US06634087B2

    公开(公告)日：2003-10-21

    申请号：US09747234

    申请日：2000-12-26

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A spin valve based magnetic read head that is suitable for use with ultra-high recording densities is described along with a process for manufacturing it. This produces a product that is free of conductor lead bridging and conductor lead fencing. A key sub-process is the deposition of a first capping layer through DC sputtering followed by, without breaking vacuum, a lead overlay layer This is followed by deposition, also by DC sputtering, of a second capping layer which is patterned so that it becomes a hard mask. Then, using this hard mask, the lead overlay layer is removed from the center of the structure by means of ion beam etching. Hard bias and conductor lead layers are then formed inside parallel trenches without the use of liftoff processes.

    摘要翻译： 描述适用于超高记录密度的基于自旋阀的磁读头及其制造方法。 这产生的产品不含导体引线桥接和导线铅栅栏。 关键的子过程是通过DC溅射沉积第一覆盖层，然后在不破坏真空的情况下沉积铅覆盖层。此后，还通过DC溅射沉积第二覆盖层，其被图案化，使得其变为 一个硬面具 然后，使用该硬掩模，通过离子束蚀刻从引线覆盖层的中心除去引线覆盖层。 然后在平行沟槽内形成硬偏压和导体引线层，而不使用脱扣工艺。