Semiconductor package socket
    91.
    发明授权
    Semiconductor package socket 失效
    半导体封装插座

    公开(公告)号:US5865632A

    公开(公告)日:1999-02-02

    申请号:US870271

    申请日:1997-06-06

    申请人: Hiroshi Iwasaki

    发明人: Hiroshi Iwasaki

    摘要: A semiconductor package socket comprises an insulating support substrate, pin contacts arranged in a constant-pitch lattice-array and which are attached in a manner that permits advance or retreat in a direction which is almost perpendicular to a main surface of the support substrate, a pin contact movement driving mechanism which advances or retreats the pin contacts en bloc, and a guide frame which has spaces to accommodate said pin contacts, which is freely detachable and which can cover areas other than those required by the pin contacts.

    摘要翻译: 半导体封装插座包括绝缘支撑基板,以恒定间距格阵列布置的销触点,其以允许在几乎垂直于支撑基板的主表面的方向上前进或后退的方式附接, 销接触运动驱动机构,其使销触头整体前进或后退;以及引导框架,其具有容纳所述销触点的空间,其可自由拆卸并且可以覆盖除了销触点所需的以外的区域。

    Process for producing polyethylene naphthalate
    92.
    发明授权
    Process for producing polyethylene naphthalate 失效
    生产聚萘二甲酸乙二醇酯的方法

    公开(公告)号:US5811513A

    公开(公告)日:1998-09-22

    申请号:US860701

    申请日:1997-07-09

    摘要: In the production of polyethylene naphthalate of the present invention, the esterification reaction between naphthalenedicarboxylic acid and ethylene glycol is conducted while causing water to be present in a reaction system from a start of reaction, in the presence of at least one catalyst selected from the group consisting of nitric, carboxylic, phosphoric and hydrogenphosphoric acid metal salts and alkyl amines according to necessity, to thereby attain an esterification ratio of 45 to 80%, so that a liquid mixture of naphthalenedicarboxylic acid esterification reaction products containing naphthalenedicarboxylic acid, carboxyl-hydroxyethoxycarbonylnaphthalene and bis(hydroxyethoxycarbonyl)naphthalene is obtained. Subsequently, a crystallized reaction product is separated from this liquid mixture to thereby obtain a mixture of esterification reaction products. Thereafter, this mixture having ethylene glycol added thereto according to necessity is subjected to polycondensation. The polyethylene naphthalate obtained by the process of the present application ensures a low content of naphthalenedicarboxylic acid esters each having diethylene glycol skeleton therein, thereby having excellent quality, for example, in appearance.

    摘要翻译: PCT No.PCT / JP96 / 03116 Sec。 371日期1997年7月9日第 102(e)日期1997年7月9日PCT 1996年10月25日PCT公布。 公开号WO97 / 17391 日期1997年5月15日在本发明的聚萘二甲酸乙二醇酯的制造中,在反应开始时,在存在至少一种催化剂的同时,使反应体系中存在水,进行萘二甲酸与乙二醇的酯化反应 根据需要选自硝酸,羧酸,磷酸和氢磷酸金属盐和烷基胺,从而达到45-80%的酯化比,使得含萘二羧酸的萘二甲酸酯化反应产物的液体混合物, 羧基 - 羟基乙氧基羰基萘和双(羟基乙氧基羰基)萘。 随后,从该液体混合物中分离出结晶的反应产物,由此得到酯化反应产物的混合物。 然后,将根据需要添加有乙二醇的混合物进行缩聚。 通过本申请的方法获得的聚萘二甲酸乙二醇酯确保了在其中具有二甘醇骨架的低含量的萘二羧酸酯,从而具有优异的质量,例如外观。

    Window molding for automobiles
    93.
    发明授权
    Window molding for automobiles 失效
    汽车窗模

    公开(公告)号:US5771652A

    公开(公告)日:1998-06-30

    申请号:US683318

    申请日:1996-07-18

    IPC分类号: B60J1/02 B60J10/00 B60J10/02

    摘要: A window molding for automobiles, which is installed around the periphery of a windshield, including a leg and a head. The head is formed to permit the creation of two different water guide portions extending along the molding, one that will function along the roof line and another along the side edge of the windshield. The side water guide portion prevents water from going from the windshield to the side windows. The roof line water guide portion opens toward the window frame and prevents water from flowing from the roof onto the windshield.

    摘要翻译: 一种用于汽车的窗模,其安装在挡风玻璃的周围,包括腿和头部。 头部被形成为允许产生沿着模制件延伸的两个不同的导水部分,这些引导部分将沿着屋顶线而起作用,另一个沿着挡风玻璃的侧边缘起作用。 侧水引导部防止水从挡风玻璃到侧窗。 屋顶导水引导部朝向窗框打开,防止水从屋顶流入挡风玻璃。

    Thin IC card and method for producing the same
    94.
    发明授权
    Thin IC card and method for producing the same 失效
    薄IC卡及其制造方法

    公开(公告)号:US5612532A

    公开(公告)日:1997-03-18

    申请号:US554927

    申请日:1995-11-09

    申请人: Hiroshi Iwasaki

    发明人: Hiroshi Iwasaki

    摘要: A thin IC card which is highly reliable, simple in construction and structure, to which a function section relating to main information processing can be easily attached, and which has improved portability, and a method for producing it are disclosed. This thin IC card is characterized by including a plate type IC module in which a semiconductor device having at least memory function and CPU function has its one side sealed or molded with a resin, and flat type externally connecting terminals have their one end connected to the input/output terminals of the semiconductor device and the other end led and exposed to a non-resin sealed or molded side, and a card-like support which has a fitting section for fitting the plate type IC module with the surface of the externally connecting terminals of the plate type IC module exposed to be substantially flush with the surface of the card, a required circuit wiring, an antenna for sending and receiving a signal without contacting, and if necessary an oscillator for specifying a frequency and a power supply battery.

    摘要翻译: 公开了一种高可靠性,结构简单,结构简单的薄型IC卡,可以容易地附加与主信息处理相关的功能部分,并且具有改进的便携性,以及其制造方法。 该薄IC卡的特征在于包括板式IC模块,其中具有至少记忆功能和CPU功能的半导体器件的单面被密封或模制成树脂,并且扁平型外部连接端子的一端连接到 半导体器件的输入/输出端子和另一端引导并暴露于非树脂密封或模制侧;以及卡状支撑件,其具有用于将板式IC模块与外部连接的表面相配合的嵌合部分 暴露于与卡的表面基本齐平的板式IC模块的端子,所需的电路布线,用于不接触地发送和接收信号的天线,以及必要时用于指定频率的振荡器和电源电池。

    Horizontal continuous casting method and apparatus
    95.
    发明授权
    Horizontal continuous casting method and apparatus 失效
    水平连铸方法及装置

    公开(公告)号:US5458183A

    公开(公告)日:1995-10-17

    申请号:US226370

    申请日:1994-04-12

    IPC分类号: B22D11/047 B22D11/00

    CPC分类号: B22D11/047

    摘要: A continuous casting method includes the steps of continuously supplying molten metal into a mold through at least one feed nozzle connected to the mold through a break ring, with the feed nozzle, the mold and the break ring forming at least a portion of a continuous casting apparatus, and intermittently withdrawing a cast piece formed from the molten metal in the mold thereby creating pressure in a space formed at a connecting point between the break ring, the mold and the cast piece as a result of the withdrawal from the mold. A shield means is placed to seal-off space between the at least one feed nozzle, and the mold to prevent entry of gas into the continuous casting apparatus and the pressure is reduced in the sealed-off space to thereby eliminate a pressure differential between the pressure in the sealed-off space and the pressure created in the space formed at the connecting point between the break ring, the mold and the cast piece during the intermittent withdrawal from the mold.

    摘要翻译: 连续铸造方法包括以下步骤:通过穿过断环连接到模具的至少一个进料喷嘴将熔融金属连续供应到模具中,进料喷嘴,模具和断裂环形成至少一部分连续铸造 装置,并且间歇地取出由模具中的熔融金属形成的铸件,从而在由模具退出的结果中形成在断环,模具和铸件之间的连接点处的空间中产生压力。 屏蔽装置被放置成密封至少一个进料喷嘴和模具之间的空间,以防止气体进入连续铸造设备,并且在密封空间中降低压力,从而消除了压力差 在间歇地退出模具期间,密封空间中的压力以及在断环,模具和铸件之间的连接点处形成的空间中产生的压力。

    Panel shutter device
    99.
    发明授权
    Panel shutter device 失效
    面板快门设备

    公开(公告)号:US5172742A

    公开(公告)日:1992-12-22

    申请号:US678638

    申请日:1991-04-01

    IPC分类号: E06B9/06

    CPC分类号: E06B9/0676 E06B9/0638

    摘要: A panel shutter device constructed in such a way that in the process of continuously moving each panel by a lifting shift along guides rails and a lateral shift along a housing rail, a guide rotary member engages or disengages a guide shaft projecting from the side of the panel opposite the driven side. At the time of descending of the shutter curtain, in order to prevent finger pinching as each panel is placed on the succeeding panels sequentially, each panel can be lifted or descended without causing a gap between panels of the shutter curtain by providing the support member suspended by a pivotable connecting chain.

    摘要翻译: 一种面板快门装置,其构造成使得在通过沿着导轨的提升移动和沿着壳体轨道的横向移动来连续移动每个面板的过程中,导向旋转构件接合或分离从侧面突出的引导轴 面板与驱动侧相对。 在快门帘下降时,为了防止每个面板顺序地放置在随后的面板上的手指夹紧,每个面板可以被提升或下降,而不会在快门帘幕的面板之间产生间隙,从而使支撑件暂停 通过可枢转的连接链。

    Method of manufacturing MES FET
    100.
    发明授权
    Method of manufacturing MES FET 失效
    制造MES FET的方法

    公开(公告)号:US5143856A

    公开(公告)日:1992-09-01

    申请号:US238995

    申请日:1988-08-29

    申请人: Hiroshi Iwasaki

    发明人: Hiroshi Iwasaki

    摘要: A GaAs epitaxial layer is formed on a semi-insulative GaAs substrate by use of a crystal growth technique which allows control on the order of atomic layer level. A metal film is formed on the GaAs epitaxial layer by use of the same crystal growth technique. Ions are implanted in source and drain high-concentration layer-forming regions, through the metal film, and are activated.

    摘要翻译: 通过使用允许控制原子层级顺序的晶体生长技术,在半绝缘GaAs衬底上形成GaAs外延层。 通过使用相同的晶体生长技术在GaAs外延层上形成金属膜。 离子通过金属膜植入源极和漏极高浓度层形成区域中并被激活。