公开(公告)号：US5293925A

公开(公告)日：1994-03-15

申请号：US811964

申请日：1991-12-23

申请人： Hatsuyoshi Kumashiro ,  Toshio Iida ,  Sadaaki Murakawa ,  Makoto Ueda ,  Yoshikazu Nishi ,  Taizou Kiyosuke ,  Hiroyuki Nakashima ,  Yoji Ao ,  Hideo Kaneko ,  Hiroshi Iwasaki ,  Kazuaki Sueoka ,  Kenichi Murai

发明人： Hatsuyoshi Kumashiro ,  Toshio Iida ,  Sadaaki Murakawa ,  Makoto Ueda ,  Yoshikazu Nishi ,  Taizou Kiyosuke ,  Hiroyuki Nakashima ,  Yoji Ao ,  Hideo Kaneko ,  Hiroshi Iwasaki ,  Kazuaki Sueoka ,  Kenichi Murai

IPC分类号： B21B39/00 ,  B22D11/128 ,  B22D11/20

CPC分类号： B22D11/20 ,  B22D11/1284 ,  B21B2203/22 ,  B21B2275/04 ,  B21B39/006

摘要： In a method and apparatus for withdrawing a strand in a horizontal continuous casting installation, the strand is withdrawn from a mold by a predetermined stroke and then retracted by a smaller stroke corresponding to shrinkage of the strand. This cycle of withdrawal and retraction is repeated intermittently. A strand withdrawing and retracting characteristic of a cycle is set in a control unit, and pinch rolls for withdrawing and retracting the strand are controlled based on the set characteristic. Actual withdrawing and retracting strokes of the strand are detected by a detecting device and the detected signal is compared with the set characteristic to produce an instruction signal which is fed back to the pinch rolls, so that the positional accuracy of the strand and the quality of the strand are improved.

摘要翻译： 在用于在水平连续铸造装置中取出股线的方法和装置中，股线从模具中以预定行程退出，然后以对应于股线收缩的较小笔划收回。 间歇性地重复撤回和撤回循环。 在控制单元中设置一个循环的退回和退回特性，并且基于设定的特性来控制用于抽出和收回该股的夹送辊。 通过检测装置检测线的实际取出和回缩行程，并将检测到的信号与设定特性进行比较，以产生反馈到夹送辊的指令信号，从而使绞合线的位置精度和质量 股线得到改善。

公开(公告)号：US5743323A

公开(公告)日：1998-04-28

申请号：US231667

申请日：1994-04-25

申请人： Haruo Ohguro ,  Toshihiro Kosuge ,  Katsuhiko Kawamoto ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Hiroyuki Nakashima ,  Yukio Morimoto ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

发明人： Haruo Ohguro ,  Toshihiro Kosuge ,  Katsuhiko Kawamoto ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Hiroyuki Nakashima ,  Yukio Morimoto ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

IPC分类号： B22D11/04 ,  B22D11/045 ,  B22D11/047 ,  B22D11/10

CPC分类号： B22D11/047 ,  B22D11/045

摘要： A continuous casting apparatus comprises continuously supplying molten metal from a tundish to a cooled mold having an inlet and an outlet at least through a break ring, forming a cast section by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface, and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and being soluble in the molten metal is invariable supplied to the entirety of the contact area of the mold and the break ring.

摘要翻译： 连续铸造设备包括将中间包中的熔融金属连续地供给至少通过断环的入口和出口的冷却模具，通过连续冷却模具中的熔融金属并开始熔融金属的固化形成铸造部分 在其表面下方，并通过其出口间歇性地将铸造部分相对于模具取出。 在连续铸造期间，不断地将压力高于大气压并且可溶于熔融金属的密封气体提供给模具和断环的整个接触区域。

公开(公告)号：US4527616A

公开(公告)日：1985-07-09

申请号：US390712

申请日：1982-06-21

申请人： Hideo Kaneko ,  Hatsuyoshi Kumashiro ,  Akira Iwata

发明人： Hideo Kaneko ,  Hatsuyoshi Kumashiro ,  Akira Iwata

IPC分类号： B22D11/10 ,  B22D11/04 ,  B22D11/047 ,  B22D27/02

CPC分类号： B22D11/10 ,  B22D11/047

摘要： A horizontal continuous casting installation, particularly for casting a strand of a large transverse dimension, wherein a body of molten metal stored in a tundish is continuously supplied through a tundish nozzle secured to the tundish in the vicinity of its bottom and extending horizontally therefrom to a mold connected to the forward end of the tundish nozzle and arranged coaxially therewith to cast a strand which is continuously withdrawn horizontally from the mold. The mold has an inner transverse dimension greater than the inner transverse dimension of the tundish nozzle. An electromagnetic field generating device is located between an outer surface of the tundish nozzle and an inner surface of the mold in the vicinity of an end surface of the mold facing the tundish nozzle for exerting an electromagnetic force on the body of molten metal flowing from the tundish nozzle to the mold in such a manner that the electromagnetic force is oriented toward the center of the body of molten metal.

摘要翻译： 一种水平连续铸造装置，特别是用于铸造大横向尺寸的股线，其中储存在中间包中的熔融金属体通过固定在其底部附近的中间包并从其水平延伸到中间包的中间包喷嘴连续供应到 模具连接到中间包喷嘴的前端并与其同轴布置，以铸造从模具水平地连续取出的股线。 模具具有大于中间包喷嘴的内横向尺寸的内横向尺寸。 电磁场产生装置位于中间包喷嘴的外表面和模具的内表面之间，在与中间包喷嘴相对的模具的端面附近，用于向从中间包喷嘴流动的熔融金属体上施加电磁力 将中间包喷嘴浇注到模具中，使得电磁力朝向熔融金属体的中心。

公开(公告)号：US5335715A

公开(公告)日：1994-08-09

申请号：US742422

申请日：1991-08-08

申请人： Haruo Ohguro ,  Toshihiro Kosuge ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

发明人： Haruo Ohguro ,  Toshihiro Kosuge ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

IPC分类号： B22D11/04 ,  B22D11/045 ,  B22D11/047 ,  B22D11/00

CPC分类号： B22D11/047 ,  B22D11/045

摘要： A continuous cast method comprises continuously supplying molten metal from a tundish through a break ring to a cooled mold having an inlet and an outlet. A cast section is formed by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and soluble in the molten metal is constantly supplied to the entirety of the contact area of the mold and the break ring.

摘要翻译： 连续铸造方法包括将熔融金属从中间包通过断裂环连续供应到具有入口和出口的冷却模具。 通过连续冷却模具中的熔融金属并使熔融金属在其表面下方的凝固开始并且通过其出口相对于模具间歇地取出铸造部分而形成铸造部分。 在连续铸造期间，不断地向模具和断环的接触区域的整体提供具有高于大气压并且可溶于熔融金属的压力的密封气体。

公开(公告)号：US5360054A

公开(公告)日：1994-11-01

申请号：US957040

申请日：1992-10-06

申请人： Hideo Kaneko ,  Hatsuyoshi Kumashiro

发明人： Hideo Kaneko ,  Hatsuyoshi Kumashiro

IPC分类号： B21B1/02 ,  B21B1/04 ,  B21B1/08 ,  B21B1/12 ,  B21B1/46 ,  B21B13/02 ,  B21B13/10 ,  B21B13/22 ,  B21B15/00 ,  B21B31/02 ,  B21B31/26 ,  B21B31/28 ,  B21B45/00 ,  B22D11/12 ,  B22D11/128

CPC分类号： B21B13/02 ,  B21B1/463 ,  B21B15/0035 ,  B22D11/1206 ,  B21B1/024 ,  B21B1/04 ,  B21B1/08 ,  B21B1/12 ,  B21B1/466 ,  B21B13/10 ,  B21B13/22 ,  B21B2031/025 ,  B21B2203/22 ,  B21B31/26 ,  B21B31/28 ,  B21B45/004

摘要： A horizontal continuous casting apparatus comprises, in one aspect, a tundish in which a molten metal material is stored, a mold assembly connected air-tightly to the tundish for casting a round billet, and an extraction device disposed on a downstream side of the mold assembly for forming a billet having a predetermined shape from the round billet fed from the mold assembly. The extraction device comprising a plurality of formation roll units arranged along a casting direction of the round billet and the formation roll units are composed of horizontal circular roll pairs, press units for pressing the roll pairs against the round billet and drive units for driving the roll pairs.

摘要翻译： 水平连续铸造设备在一个方面包括其中储存熔融金属材料的中间包，气密地连接到中间包上以铸造圆形坯料的模具组件，以及设置在模具下游侧的提取装置 用于从从模具组件供给的圆坯形成具有预定形状的坯料的组件。 提取装置包括沿着圆钢坯的铸造方向布置的多个成形辊单元，并且成形辊单元由水平圆形辊对构成，用于将辊对压靠在圆钢坯上的冲压单元和用于驱动辊的驱动单元 对。

公开(公告)号：US08647795B2

公开(公告)日：2014-02-11

申请号：US13273656

申请日：2011-10-14

申请人： Hideo Kaneko ,  Yokio Inazuki ,  Hiroki Yoshikawa

发明人： Hideo Kaneko ,  Yokio Inazuki ,  Hiroki Yoshikawa

IPC分类号： G03F1/60 ,  C23C14/00

CPC分类号： C23C14/3414 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/564 ,  G03F1/54

摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。

公开(公告)号：US08309277B2

公开(公告)日：2012-11-13

申请号：US12813137

申请日：2010-06-10

申请人： Shinichi Igarashi ,  Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa ,  Yoshinori Kinase

发明人： Shinichi Igarashi ,  Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa ,  Yoshinori Kinase

IPC分类号： G03F1/50

CPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/32 ,  G03F1/80

摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.

摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。

公开(公告)号：US08168351B2

公开(公告)日：2012-05-01

申请号：US12750121

申请日：2010-03-30

申请人： Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa

发明人： Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa

IPC分类号： G03F1/00 ,  G06K9/00

CPC分类号： G03F1/84 ,  G03F7/70783

摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.

摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。

公开(公告)号：US07179567B2

公开(公告)日：2007-02-20

申请号：US10606894

申请日：2003-06-27

申请人： Yukio Inazuki ,  Masayuki Nakatsu ,  Tsuneo Numanami ,  Atsushi Tajika ,  Hideo Kaneko ,  Satoshi Okazaki

发明人： Yukio Inazuki ,  Masayuki Nakatsu ,  Tsuneo Numanami ,  Atsushi Tajika ,  Hideo Kaneko ,  Satoshi Okazaki

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/26

摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.

摘要翻译： 在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。 所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。

公开(公告)号：US20050260505A1

公开(公告)日：2005-11-24

申请号：US11130278

申请日：2005-05-17

申请人： Noriyasu Fukushima ,  Hiroki Yoshikawa ,  Hideo Kaneko

发明人： Noriyasu Fukushima ,  Hiroki Yoshikawa ,  Hideo Kaneko

IPC分类号： C23C14/00 ,  C23C14/06 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  G03C5/00 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/32 ,  C23C14/0676

摘要： A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.

摘要翻译： 通过在透明基板上形成光吸收膜，并以3〜40J / cm 2的能量密度从闪光灯照射光吸收膜来制备光掩模坯料。 通过光刻法在光掩模坯料上形成抗蚀剂图案，蚀刻除了未被抗蚀剂图案覆盖的光吸收膜的那些部分，并除去抗蚀剂来制备光掩模。