公开(公告)号：US07356649B2

公开(公告)日：2008-04-08

申请号：US10520653

申请日：2002-09-30

申请人： Yuki Kondoh ,  Tatsuya Kamei ,  Makoto Ishikawa

发明人： Yuki Kondoh ,  Tatsuya Kamei ,  Makoto Ishikawa

IPC分类号： G06F12/00

CPC分类号： G06F12/0888

摘要： A semiconductor data processor has a first memory(6) constituting a cache memory, a second memory(20) capable of being a cacheable area or a non-cacheable area by the first memory, and a read buffer(12) capable of carrying out an operation for outputting data corresponding to a read access when the second memory is read accessed as the non-cacheable area. The designation of the cacheable area and the non-cacheable area for the second memory is determined by the designation of a cacheable area or a non-cacheable area for a memory space to which the second memory is mapped. The designation may be carried out in the operation mode of the data processor or by setting a control register, for example.

摘要翻译： 半导体数据处理器具有构成高速缓冲存储器的第一存储器（6），能够由第一存储器构成可高速缓存区域或不可缓存区域的第二存储器（20），以及能够执行 当第二存储器被读取访问作为不可缓存区域时，用于输出与读访问相对应的数据的操作。 用于第二存储器的可缓存区域和不可缓存区域的指定由第二存储器映射到的存储器空间的可缓存区域或不可缓存区域的指定来确定。 该指定可以在数据处理器的操作模式下执行，或者例如设置控制寄存器。

公开(公告)号：US07304539B2

公开(公告)日：2007-12-04

申请号：US10960097

申请日：2004-10-08

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US20060189123A1

公开(公告)日：2006-08-24

申请号：US11289382

申请日：2005-11-30

申请人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

发明人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： C23F1/44 ,  C23F1/20 ,  C23F1/26 ,  H01L21/32134

摘要： A fine wiring line profile with satisfactory precision is formed from a multilayer film containing a first layer made of an aluminum alloy and a second layer formed thereon made of a molybdenum-niobium alloy, by simultaneously etching the two layers constituting the multilayer film through only one etching operation while preventing the upper layer from forming overhangs. An etchant for etching a multilayer film containing an aluminum alloy layer formed over a substrate and a molybdenum-niobium alloy layer formed thereon having a niobium content of 2-19% by weight contains an aqueous solution of an acid mixture containing phosphoric acid, nitric acid, and an organic acid; and a method of etching is carried out with this etchant. The etchant preferably has a phosphoric acid concentration Np of 50-75% by weight, a nitric acid concentration Nn of 2-15% by weight, and an acid ingredient concentration defined by Np+(98/63)Nn of 55-85% by weight.

摘要翻译： 由含有由铝合金制成的第一层和由钼铌合金构成的第二层的多层膜通过仅通过一个同时蚀刻构成多层膜的两层形成精细的布线线廓 同时防止上层形成悬垂。 用于蚀刻含有在基材上形成的铝合金层的多层膜的蚀刻剂和其上形成的铌含量为2〜19重量％的钼 - 铌合金层含有含有磷酸，硝酸的酸混合物的水溶液 ，和有机酸; 并且用该蚀刻剂进行蚀刻的方法。 蚀刻剂的磷酸浓度优选为50〜75重量％，硝酸浓度N 2〜2重量％，酸成分 浓度由55-85％（重量）的N + P +（98/63）N 所定义。

公开(公告)号：US20060083865A1

公开(公告)日：2006-04-20

申请号：US11148826

申请日：2005-06-09

申请人： Masato Okabe ,  Naoko Sawatari ,  Makoto Ishikawa

发明人： Masato Okabe ,  Naoko Sawatari ,  Makoto Ishikawa

IPC分类号： G02F1/1333 ,  G02F1/1337 ,  C09K19/52 ,  C09K19/00 ,  C09K19/38

CPC分类号： C09K19/0225 ,  C09K2019/0448 ,  G02F1/133528 ,  G02F1/133788 ,  G02F1/141 ,  G02F2001/133726 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1036

摘要： The main object of the present invention is to control the alignment of the ferroelectric liquid crystal by a simple method without the need of an alignment process such as the rubbing process and the photo alignment process in a liquid crystal display using a ferroelectric liquid crystal; to solve better the light scattering generated at the interface between the polarizing plate and the other functional layers compared with the case of separately providing the polarizing plate by the use of an alignment layer having the alignment function of controlling the alignment of the ferroelectric liquid crystal and the polarizing function of changing a non polarized light beam to a linear polarized light beam and thereby restrain the deterioration of the light transmittance, to achieve a thin shape and a light weight of the liquid crystal display. The invention achieves the object by using a columnar alignment layer having a column structure with plate-like molecule having the photo dichroism in the visible light range as one of the alignment layers for controlling the alignment of the ferroelectric liquid crystal and forming a reactive liquid crystal layer produced by fixing a reactive liquid crystal including a polymerizable liquid crystal material on the side to be contacted with the ferroelectric liquid crystal on the columnar alignment layer, showing the nematic phase on the columnar alignment layer.

摘要翻译： 本发明的主要目的是通过简单的方法控制铁电液晶的取向，而不需要使用铁电液晶的液晶显示器中的摩擦处理和光取向处理的取向处理; 与通过使用具有控制铁电液晶的取向的取向功能的取向膜和分别提供偏振片的情况相比，在偏振片与其他功能层的界面处产生的光散射更好地解决 将非偏振光束改变为线偏振光的偏振功能，从而抑制透光率的劣化，以实现液晶显示器的薄型化和轻量化。 本发明通过使用具有列结构的列结构的柱状取向层，其具有在可见光范围内具有二色性的板状分子的柱状取向层作为用于控制铁电液晶的取向并形成反应性液晶的取向层之一 在与柱状取向层上的与铁电液晶接触的一侧固定包含聚合性液晶材料的反应性液晶而形成的层，在柱状取向膜上示出向列相。

公开(公告)号：US06959910B2

公开(公告)日：2005-11-01

申请号：US10419178

申请日：2003-04-21

申请人： Takumi Matsumoto ,  Makoto Ishikawa

发明人： Takumi Matsumoto ,  Makoto Ishikawa

IPC分类号： F16K31/06 ,  F16K31/11

CPC分类号： F16K31/0627

摘要： A solenoid valve includes a main valve having a valve member which switches over flow paths by contacting with and separating from valve seats in a valve casing, a solenoid operating portion to drive the valve member, and a manually-operated device including an operation rod air-tightly and slidably accommodated in a rod-insertion hole provided in the valve casing and abuts against an end surface of a movable iron core to push the movable iron core in its axial direction, and an operating member movably mounted to a mounting surface of the valve casing to drive the operation rod.

摘要翻译： 电磁阀包括主阀，其具有阀构件，阀构件通过与阀壳中的阀座接触和分离而切换流路，驱动阀构件的螺线管操作部分以及包括操作杆空气的手动操作装置 可滑动地容纳在设置在所述阀壳体中的杆插入孔中，并抵靠在可动铁芯的端面上，以推动所述可动铁芯沿其轴向方向;以及操作构件，其可移动地安装到所述可动铁芯的安装表面 阀壳驱动操作杆。

公开(公告)号：US06820859B2

公开(公告)日：2004-11-23

申请号：US10218443

申请日：2002-08-15

申请人： Shinji Miyazoe ,  Masaru Narita ,  Makoto Ishikawa

发明人： Shinji Miyazoe ,  Masaru Narita ,  Makoto Ishikawa

IPC分类号： F16K324

CPC分类号： F16K27/041 ,  F16K27/003 ,  F16K27/048

摘要： To simplify and facilitate working/grinding or the like on a valve hole in a body for a valve reduce a manufacturing cost of the body for a valve. A body for a valve 10 provided with a valve hole for inserting a valve member slidably therein is formed by splitting the body for a valve on split faces 13 including an axial line of the valve hole and extending along directions of flow paths 12p, 12a, 12b, 12r communicating towards the valve hole from ports P, A, B, R opened to a body outer face and mutually joining body portion pieces which are respectively molded individually.

摘要翻译： 为了简化和便于在阀体中的阀孔上的加工/研磨等来减少阀体的制造成本。 具有用于将阀构件可滑动地插入其中的阀孔10的阀体通过在包括阀孔的轴线并且沿着流路12p，12a的方向延伸的开口面13上分离阀而形成， 12b，12r从朝向主体外表面开口的端口P，A，B，R朝向阀孔连通，并且相互连接分别分别模制的主体部分。

公开(公告)号：US06806206B2

公开(公告)日：2004-10-19

申请号：US10197259

申请日：2002-07-18

申请人： Masaki Munakata ,  Hirohito Komatsu ,  Satoshi Kumon ,  Kazuma Teramoto ,  Nobuhiro Goda ,  Masakazu Motoi ,  Noriyuki Saitou ,  Toshiaki Sakakihara ,  Makoto Ishikawa

发明人： Masaki Munakata ,  Hirohito Komatsu ,  Satoshi Kumon ,  Kazuma Teramoto ,  Nobuhiro Goda ,  Masakazu Motoi ,  Noriyuki Saitou ,  Toshiaki Sakakihara ,  Makoto Ishikawa

IPC分类号： H01L21302

CPC分类号： C23F1/30 ,  G02F2001/136295 ,  H01L21/32134

摘要： A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.

摘要翻译： 通过蚀刻液均匀地蚀刻基板上的银或银合金薄层，而不产生蚀刻残留物，同时避免由于过蚀刻而造成的侧面蚀刻。 蚀刻液含有0.005〜1重量％的银离子。 将蚀刻液供给到槽或蚀刻液供给装置，然后与基板上的银或银合金薄层接触。

公开(公告)号：US06727178B2

公开(公告)日：2004-04-27

申请号：US10419179

申请日：2003-04-21

申请人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

发明人： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

IPC分类号： H01L2144

CPC分类号： H01L21/32134 ,  C23F1/20

摘要： An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.

摘要翻译： 用于通过湿蚀刻图案化薄金属膜的蚀刻剂，特别是用于制造半导体器件（诸如半导体元件和液晶显示元件）的蚀刻剂适用于具有由铝制成的第一层或多层膜的多层膜 铝合金，其上形成有由铝或铝合金制成的第二层，每个第二层含有选自氮，氧，硅和碳中的至少一种元素，并且具有35至65重量％的磷酸含量和硝酸 含量为0.5〜15重量％ 并且使用蚀刻剂进行蚀刻。

公开(公告)号：US06626139B1

公开(公告)日：2003-09-30

申请号：US09869104

申请日：2001-06-22

申请人： Yuji Horita ,  Kouhei Hori ,  Makoto Ishikawa ,  Hiroshi Hosoi

发明人： Yuji Horita ,  Kouhei Hori ,  Makoto Ishikawa ,  Hiroshi Hosoi

IPC分类号： F02B7506

CPC分类号： F16F15/264 ,  F16F15/12 ,  F16H55/14 ,  F16H57/0006 ,  Y10T464/50

摘要： The present invention provides a gear mechanism of a power transmitting system, which includes a crank gear operatively coupled with a crankshaft, and a first driven gear that is coupled with a first balance shaft via a damping mechanism that allows relative rotation between the driven gear and the balance shaft. The damping mechanism includes a friction damper that generates frictional force when the first driven gear and a counter gear fixed to the first balance shaft rotate relative to each other within a predetermined rotational phase range or angle, and a stopper rubber or rubbers that elastically deforms to generate elastic force when the first driven gear and the first balance shaft rotate relative to each other beyond the predetermined rotational angle.

摘要翻译： 本发明提供了一种动力传递系统的齿轮机构，其包括与曲轴可操作地联接的曲柄齿轮，以及第一从动齿轮，其经由阻尼机构与第一平衡轴联接，所述阻尼机构允许从动齿轮和 平衡轴。 阻尼机构包括摩擦阻尼器，当第一从动齿轮和固定于第一平衡轴的反转齿轮在预定的旋转相位范围或角度内相对旋转时产生摩擦力;以及止动橡胶或橡胶，弹性变形为 当第一从动齿轮和第一平衡轴相对于彼此旋转超过预定旋转角度时产生弹力。

公开(公告)号：US06520202B2

公开(公告)日：2003-02-18

申请号：US09927325

申请日：2001-08-13

申请人： Shinji Miyazoe ,  Makoto Ishikawa

发明人： Shinji Miyazoe ,  Makoto Ishikawa

IPC分类号： F16K3700

CPC分类号： F15B13/0839 ,  F15B13/0402 ,  F15B13/042 ,  F15B13/0817 ,  F15B13/0825 ,  F15B13/0853 ,  F15B13/0857 ,  F15B13/086 ,  F15B13/0867 ,  F15B13/0875 ,  F15B2013/0409 ,  F16K27/003 ,  F16K37/0041 ,  Y10T137/8242 ,  Y10T137/86614 ,  Y10T137/86622 ,  Y10T137/87885

摘要： A manifold valve in which mounting of a magnetometric sensor is easy and wiring is easy and which is easy to handle in maintenance and has a position detecting function is obtained. This valve is formed of a solenoid valve 1 and a manifold base 2 onto which the solenoid valve 1 is mounted. The solenoid valve 1 includes a magnet 20 mounted to a piston 12a to detect a position and a depression 22 in which a sensor is to be mounted and which is provided in a position corresponding to the magnet 20. The manifold base 2 includes a magnetometric sensor 21 provided to a position corresponding to the depression 22 in a projecting state and the magnetometric sensor 21 is automatically mounted in the depression 22 when the solenoid valve 1 is mounted onto the manifold base 2.