公开(公告)号：US07456010B2

公开(公告)日：2008-11-25

申请号：US10531971

申请日：2003-12-10

申请人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

发明人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

IPC分类号： C12N1/20

CPC分类号： C12P17/182 ,  C12R1/15

摘要： The invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 producing 5′-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to osmotic pressure. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N′-nitro-n-nitrosoguanidine (NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXSP 0201 KCCM 10448 of the present invention makes it possible to overcome growth-standing phase rapidly on early culture and for same period of fermentation, can accumulate 5′-xanthylic acid in culture medium at a high yield and concentration rate.

摘要翻译： 本发明涉及产生5'-戊酸的产氨棒杆菌CJXSP 0201 KCCM 10448。 更具体地，本发明涉及具有抗渗透压的耐氨基酸棒杆菌KCCM 10340的突变菌株的产氨棒杆菌CJXSP 0201 KCCM 10448。 为了获得具有增强的呼吸活性的突变菌株，本发明使用产氨杆菌KCCM 10340作为亲本菌株，并用UV辐射和N-甲基-N'-硝基-N-亚硝基胍（NTG）等突变衍生物按照 普通程序。 因此，本发明的产氨酸棒杆菌CJXSP 0201 KCCM 10448可以在早期培养中快速克服生长稳定期，并且在相同的发酵期内，可以以高产率和浓度的速率在培养基中积累5'-叶酸。

公开(公告)号：US20080138859A1

公开(公告)日：2008-06-12

申请号：US11721515

申请日：2005-12-16

申请人： Young-Hoon Park ,  Hyun-Soo Kim ,  Hye-Jin Choi ,  Jin-Ho Lee ,  Soo-Youn Hwang ,  Jae-Ick Sim ,  Tae-Sun Kang ,  Won-Sik Lee

发明人： Young-Hoon Park ,  Hyun-Soo Kim ,  Hye-Jin Choi ,  Jin-Ho Lee ,  Soo-Youn Hwang ,  Jae-Ick Sim ,  Tae-Sun Kang ,  Won-Sik Lee

IPC分类号： C12P21/04 ,  C12N15/11 ,  C12N15/00 ,  C12N1/20

CPC分类号： C07K14/34

摘要： Provided are a promoter including at least one polynucleotide selected from the group consisting of SEQ ID NOS: 1 to 7, an expression cassette including the same, a vector including the expression cassette, a host cell including the vector, and a method of expressing a gene using the host cell.

摘要翻译： 提供了包含选自SEQ ID NO：1至7的至少一种多核苷酸的启动子，包含其的表达盒，包含表达盒的载体，包含载体的宿主细胞，以及表达 基因使用宿主细胞。

公开(公告)号：US20080102551A1

公开(公告)日：2008-05-01

申请号：US11964522

申请日：2007-12-26

申请人： Young-Hoon Park ,  Sang-Il Jung

发明人： Young-Hoon Park ,  Sang-Il Jung

IPC分类号： H01L21/04

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

摘要翻译： 提供CMOS图像传感器及其制造方法。 图像传感器包括在二极管区域保护光电二极管的阻挡层。 阻挡层被形成为覆盖二极管区域的顶部并且延伸到有源区域以便覆盖传输栅极和浮动扩散层。 因此，在形成各种栅极的侧壁间隔物期间，或者在形成DDD或LDD结构的结区域期间，通过离子注入，浮动扩散层可能不会受到蚀刻的侵蚀，从而减少漏电流和暗电流 浮动扩散层。

公开(公告)号：US20070007611A1

公开(公告)日：2007-01-11

申请号：US11385714

申请日：2006-03-22

申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

IPC分类号： H01L27/14

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

摘要翻译： 提供了包括具有均匀杂质掺杂分布的传输栅电极的图像传感器。 图像传感器还包括包括像素区域的半导体衬底，其中像素区域包括有源区域，并且传输栅极电极设置在有源区域上。 还提供了一种制造图像传感器的方法。 该方法包括制备半导体衬底，在半导体衬底上形成多晶硅层，用杂质离子掺杂多晶硅层，并构图多晶硅层。

公开(公告)号：US20060154346A1

公开(公告)日：2006-07-13

申请号：US10531675

申请日：2003-12-10

申请人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

发明人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

IPC分类号： C12P17/02 ,  C12N1/20

CPC分类号： C12P19/32 ,  C12P19/40 ,  C12R1/15

摘要： The invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 producing 5′-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to oligomycin. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N′-nitro-n-nitrosoguanidine(NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 of the present invention makes it possible to increase ATP reproducing activity for same period of fermentation and can accumulate 5′xanthylic acid in culture medium at a high yield and concentration rate.

摘要翻译： 本发明涉及产生5'-戊酸的产氨棒杆菌CJXOL 0201 KCCM 10447。 更具体地，本发明涉及产氨杆菌CJXOL 0201 KCCM 10447，它是具有对寡霉素抗性的产氨棒杆菌KCCM10340的突变菌株。 为了获得具有增强的呼吸活性的突变菌株，本发明使用产氨杆菌KCCM 10340作为亲本菌株，并用UV辐射和N-甲基-N'-硝基-N-亚硝基胍（NTG）等突变衍生物按照 普通程序。 因此，本发明的产氨酸棒杆菌CJXOL 0201 KCCM 10447可以在相同的发酵期内增加ATP的再生活性，并且可以高产率和浓度的速率在培养基中积累5'-戊酸。

公开(公告)号：US20060141661A1

公开(公告)日：2006-06-29

申请号：US11360741

申请日：2006-02-22

申请人： Young-Hoon Park ,  Sang-Il Jung

发明人： Young-Hoon Park ,  Sang-Il Jung

IPC分类号： H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

公开(公告)号：US20060102938A1

公开(公告)日：2006-05-18

申请号：US11274855

申请日：2005-11-16

申请人： Young-Hoon Park ,  Tae-Seok Oh

发明人： Young-Hoon Park ,  Tae-Seok Oh

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14654 ,  H01L27/14689

摘要： An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.

摘要翻译： CMOS图像传感器包括响应于在其接收的入射光而产生电荷的光电二极管区域。 在一个示例中，CMOS图像传感器还包括适于防止或基本上防止电荷溢出到位于光电二极管区域的相对侧上的浮动扩散区域或存储扩散区域的第一和第二传输门。 在这个例子中，在半导体衬底中在相对于光电二极管区域的存储扩散区的相对侧上形成读扩散区，并且在浮动扩散区相对侧的半导体衬底中形成复位扩散区 光电二极管区域。 读扩散区域可以通过连接线电连接到浮动扩散区域。

公开(公告)号：US20060006437A1

公开(公告)日：2006-01-12

申请号：US11222694

申请日：2005-09-09

申请人： Jae-Ho Song ,  Young-Hoon Park ,  Sang-Hak Shin

发明人： Jae-Ho Song ,  Young-Hoon Park ,  Sang-Hak Shin

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685

摘要： Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.

公开(公告)号：US06852168B2

公开(公告)日：2005-02-08

申请号：US09848577

申请日：2001-05-03

申请人： Young-Hoon Park

发明人： Young-Hoon Park

IPC分类号： C23C16/54 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45574 ,  C23C16/45512 ,  C23C16/45565

摘要： A thin film deposition reactor including a reactor block on which a wafer is placed, a shower head plate for uniformly maintaining a predetermined pressure by covering the reactor block, a wafer block installed in the reactor block, on which the wafer is to be seated; an exhausting portion connected to the reactor block for exhausting a gas from the reactor block; a first connection line in communication with the shower head plate, through which a first reaction gas and/or inert gas flow, a second connection line in communication with the shower head plate, through which a second reaction gas and/or inert gas flow, and a diffusion plate mounted on a lower surface of the shower head plate. The diffusion plate has a plurality of spray holes which are in communication with the first connection line and face the upper surface of the wafer to spray the first reaction gas and/or inert gas onto the wafer, and a plurality of nozzles which are in communication with the second connection line and extend toward the inner side surface of the reactor block to spray the second reaction gas and/or inert gas toward edges of the wafer.

摘要翻译： 一种薄膜沉积反应器，包括其上放置晶片的反应器块，用于通过覆盖反应器块均匀地保持预定压力的喷头板;安装在反应器块中的晶片块，晶片将在其上安置; 连接到反应器块的排气部分，用于从反应器块排出气体; 与淋浴喷头板连通的第一连接线，第一反应气体和/或惰性气体流，与淋浴喷头板连通的第二连接线，第二反应气体和/或惰性气体流过， 以及安装在喷头板的下表面上的扩散板。 扩散板具有多个与第一连接线连通并与晶片的上表面相连的喷孔，以将第一反应气体和/或惰性气体喷射到晶片上，并且多个喷嘴处于连通状态 与第二连接线并且朝向反应器块的内侧表面延伸，以将第二反应气体和/或惰性气体喷射到晶片的边缘。

公开(公告)号：US06563162B2

公开(公告)日：2003-05-13

申请号：US10102312

申请日：2002-03-19

申请人： Myoung-Hee Han ,  Young-Hoon Park ,  Ju-Wan Kim ,  Ju-Bum Lee

发明人： Myoung-Hee Han ,  Young-Hoon Park ,  Ju-Wan Kim ,  Ju-Bum Lee

IPC分类号： H01L1304

CPC分类号： H01L27/10855 ,  H01L21/76897 ,  H01L23/5222 ,  H01L27/10885 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device for reducing parasitic bit line capacitance and a method of fabricating the same are provided. The semiconductor memory device includes a conductive pad formed on a semiconductor substrate and a first interlayer insulating layer having a first contact hole that exposes the conductive pad. The first interlayer insulating layer is formed on the conductive pad and the semiconductor substrate. Bit line stacks are formed on the first interlayer insulating layer. Bit line spacers are formed from a combination of materials having different dielectric constants on the sidewalls of the bit line stack to reduce the parasitic bit line capacitance. Preferably, the bit line spacers are stack layers including silicon nitride, silicon oxide, and silicon nitride. A second interlayer insulating layer having a second contact hole is formed on the bit line stack. A conductive plug fills the first and second contact holes. A storage electrode of a capacitor is formed on the conductive plug to be connected to the conductive pad.