公开(公告)号：US20080061388A1

公开(公告)日：2008-03-13

申请号：US11520868

申请日：2006-09-13

申请人： Zhitao Diao ,  Yiming Huai

发明人： Zhitao Diao ,  Yiming Huai

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  G11C11/16

摘要： Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.

摘要翻译： 具有磁或磁阻隧道结（MTJS）的器件具有多层绝缘体阻挡层，以在器件电路中产生平衡的写入开关电流，或者产生具有自旋转矩传递感应开关磁化所需的平衡临界自旋电流的磁性器件，或 对于正向和反向偏置方向的MTJ都是这样。

公开(公告)号：US07230845B1

公开(公告)日：2007-06-12

申请号：US11192811

申请日：2005-07-29

申请人： Lien-Chang Wang ,  Yiming Huai

发明人： Lien-Chang Wang ,  Yiming Huai

IPC分类号： G11C11/15

CPC分类号： G11C11/15

摘要： A method and system for providing a magnetic memory device are disclosed. The method and system include providing a magnetic element that includes a data storage layer having at least one easy axis in at least a first direction. The method and system also include providing a hard bias structure surrounding a portion of the magnetic element. The hard bias structure is also configured to provide at least one hard bias field essentially parallel to the at least the first direction or essentially perpendicular to the at least the first direction.

摘要翻译： 公开了一种用于提供磁存储器件的方法和系统。 该方法和系统包括提供包括在至少第一方向上具有至少一个易轴的数据存储层的磁性元件。 该方法和系统还包括提供围绕磁性元件的一部分的硬偏置结构。 硬偏置结构还被配置为提供基本上平行于至少第一方向或基本上垂直于至少第一方向的至少一个硬偏置场。

公开(公告)号：US20070074317A1

公开(公告)日：2007-03-29

申请号：US11210452

申请日：2005-08-23

申请人： Mahendra Pakala ,  Eugene Chen ,  Yiming Huai

发明人： Mahendra Pakala ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L29/74

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/10

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。 双层包括稀土 - 过渡金属合金层和自旋电流增强层。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：US07110287B2

公开(公告)日：2006-09-19

申请号：US10778735

申请日：2004-02-13

申请人： Yiming Huai ,  Mahendra Pakala

发明人： Yiming Huai ,  Mahendra Pakala

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1675

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, spacer, free, and heat assisted switching layers. The spacer layer resides between the pinned and free layers. The free layer resides between the spacer and heat assisted switching layers. The heat assisted switching layer improves thermal stability of the free layer when the free layer is not being switched, preferably via an exchange coupling. The free layer is switched using spin transfer when a write current is passed through the magnetic element. The write current preferably provides heat that reduces the heat assisted switching layer's stabilization of the free layer. In another aspect, the magnetic element also includes second free, a second spacer, and second pinned layers. The heat assisted switching layer resides between the two free layers, which are magnetostatically coupled.

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括钉扎，间隔件，自由和热辅助开关层。 间隔层位于固定层和自由层之间。 自由层位于间隔件和热辅助切换层之间。 当自由层未被切换时，优选通过交换耦合，热辅助切换层改善了自由层的热稳定性。 当写入电流通过磁性元件时，使用自旋转移来切换自由层。 写入电流优选地提供热量，其减少热辅助切换层的自由层的稳定性。 在另一方面，磁性元件还包括第二自由，第二间隔物和第二钉扎层。 热辅助切换层位于两个自由层之间，这两个自由层是静磁耦合的。

公开(公告)号：US20060192237A1

公开(公告)日：2006-08-31

申请号：US11413744

申请日：2006-04-28

申请人： Yiming Huai

发明人： Yiming Huai

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01F41/305 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3227 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one channel in an insulating matrix and resides between the pinned layer and the free layer. The channel(s) are ferromagnetic, conductive, and extend through the insulating matrix between the free layer and the pinned layer. The size(s) of the channel(s) are sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. The free layer is ferromagnetic and has a free layer magnetization. Preferably, the method and system also include providing a second pinned layer and a nonmagnetic spacer layer between the second pinned layer and the free layer. In this aspect, the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，磁电流限制层和自由层。 钉扎层是铁磁性的并且具有第一钉扎层磁化。 磁电流限制层在绝缘基体中具有至少一个通道，并且位于被钉扎层和自由层之间。 通道是铁磁性的，导电的，并且延伸穿过自由层和被钉扎层之间的绝缘基体。 通道的尺寸足够小，使得载流子可以在磁电流限制层中产生弹道磁阻。 自由层是铁磁性的并且具有自由层磁化。 优选地，该方法和系统还包括在第二被钉扎层和自由层之间提供第二钉扎层和非磁性间隔层。 在这方面，磁性元件被配置为允许使用自旋转移来切换自由层的磁化。

公开(公告)号：US06992359B2

公开(公告)日：2006-01-31

申请号：US10789334

申请日：2004-02-26

申请人： Paul P. Nguyen ,  Yiming Huai

发明人： Paul P. Nguyen ,  Yiming Huai

IPC分类号： H01L43/00

CPC分类号： H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  Y10T428/26 ,  Y10T428/261 ,  Y10T428/265

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

公开(公告)号：US20050201023A1

公开(公告)日：2005-09-15

申请号：US11114946

申请日：2005-04-25

申请人： Yiming Huai ,  Paul Nguyen

发明人： Yiming Huai ,  Paul Nguyen

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/33

CPC分类号： H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。 钉扎层具有沿第一方向固定的磁化。 非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。 阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。 第二被钉扎层具有沿第二方向固定的磁化。 磁性元件构造成允许自由层的磁化改变方向，这是由于当写入电流通过磁性元件时的自旋转移。

公开(公告)号：US20050184839A1

公开(公告)日：2005-08-25

申请号：US10783416

申请日：2004-02-19

申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01H9/00 ,  H01L43/10

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：US06920063B2

公开(公告)日：2005-07-19

申请号：US10741188

申请日：2003-12-18

申请人： Yiming Huai ,  Paul P. Nguyen

发明人： Yiming Huai ,  Paul P. Nguyen

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。 磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。 钉扎层具有沿第一方向固定的磁化。 非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。 阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。 第二被钉扎层具有沿第二方向固定的磁化。 磁性元件配置成当写入电流通过磁性元件时，由于自旋转移使自由层的磁化改变方向。

公开(公告)号：US20050045913A1

公开(公告)日：2005-03-03

申请号：US10649119

申请日：2003-08-26

申请人： Paul Nguyen ,  Yiming Huai

发明人： Paul Nguyen ,  Yiming Huai

IPC分类号： G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L31/109

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够存储多个位的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。 第一固定层是铁磁性的并且具有沿第一方向固定的第一固定层磁化。 第一非磁性层位于第一被钉扎层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。 连接层位于第二被钉扎层和第一自由层之间。 第二非磁性层位于第二被钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件被配置为当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。