公开(公告)号：US08686542B2

公开(公告)日：2014-04-01

申请号：US13828117

申请日：2013-03-14

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H04L21/00

CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US20140084482A1

公开(公告)日：2014-03-27

申请号：US13711554

申请日：2012-12-11

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson

IPC: H01L23/00

CPC classification number: H01L24/06 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/7598 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列形成在由热固性材料形成的稳定柱阵列上。 每个微型装置包括比直接在底面下面的相应稳定柱更宽的底表面。

公开(公告)号：US08558243B2

公开(公告)日：2013-10-15

申请号：US13708704

申请日：2012-12-07

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L27/15 ,  H01L29/18 ,  H01L23/02 ,  H01L21/00

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：US08415768B1

公开(公告)日：2013-04-09

申请号：US13543684

申请日：2012-07-06

Applicant: Dariusz Golda ,  Andreas Bibl

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/06

CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US08383506B1

公开(公告)日：2013-02-26

申请号：US13543690

申请日：2012-07-06

Applicant: Dariusz Golda ,  Andreas Bibl

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/00

CPC classification number: B81C99/002 ,  H01L21/76898 ,  H01L24/75 ,  H01L2224/7598

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。