公开(公告)号：US20130250673A1

公开(公告)日：2013-09-26

申请号：US13887288

申请日：2013-05-04

申请人： International Business Machines Corporation ,  MagIC Technologies, Inc.

发明人： Hsu-Kai Yang ,  Yutaka Nakamura ,  John Debrosse

IPC分类号： G11C11/16

CPC分类号： G11C11/1653 ,  G11C7/18 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1675

摘要： An array of rows and columns of SMT MRAM cells has each of the columns associated with one of its adjacent columns. Each of the SMT MRAM cells of the column is connected to a true data bit line and each of the SMT MRAM cells of the associated pair of columns is connected to a shared complement data bit line. A shunting switch device is connected between each of the true data bit lines and the shared complement data bit line for selectively connecting one of the true data bit lines to the shared complement data bit line to effectively reduce the resistance of the complement data bit line and to eliminate program disturb effects in adjacent non-selected columns of the SMT MRAM cells.

公开(公告)号：US08456893B2

公开(公告)日：2013-06-04

申请号：US12584971

申请日：2009-09-15

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  H01L43/12

摘要： A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to

摘要翻译： 公开了将旋转RAM中的自旋转移磁化开关电流（Jc）最小化为<1×106A / cm 2的MTJ。 MTJ具有Co60Fe20B20 / MgO / Co60Fe20B20配置，其中CoFeB AP1钉扎和自由层是无定形的，并且通过ROX或NOX工艺形成结晶MgO隧道势垒。 覆盖层优选为Hf / Ru复合材料，其中下部Hf层用作优异的吸氧材料，以减少自由层/覆盖层界面处的磁性“死层”，从而增加dR / R，并降低He和Jc 。 退火温度降低至约280℃，以产生比350℃退火更平滑的CoFeB / MgO界面和较小的偏移场。 在第二实施例中，AP1层具有CoFeB / CoFe构型，其中下CoFeB层是非晶的，并且上CoFe层是结晶的，以进一步提高dR / R，并将RA降低到10欧姆/ m 2。

公开(公告)号：US08436437B2

公开(公告)日：2013-05-07

申请号：US12803191

申请日：2010-06-21

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

摘要翻译： 利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于 被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层 埃厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

公开(公告)号：US08273666B2

公开(公告)日：2012-09-25

申请号：US12927615

申请日：2010-11-19

申请人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

发明人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.

摘要翻译： 在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。 通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

公开(公告)号：US08269292B2

公开(公告)日：2012-09-18

申请号：US12584946

申请日：2009-09-15

申请人： Cheng T. Horng ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： H01L29/82 ,  H01L43/00 ,  G11C11/00 ,  G11C11/14

CPC分类号： H01L43/08 ,  H01L43/12

摘要： A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to

摘要翻译： 公开了将旋转RAM中的自旋转移磁化开关电流（Jc）最小化为<1×106A / cm 2的MTJ。 MTJ具有Co60Fe20B20 / MgO / Co60Fe20B20配置，其中CoFeB AP1钉扎和自由层是无定形的，并且通过ROX或NOX工艺形成结晶MgO隧道势垒。 覆盖层优选为Hf / Ru复合材料，其中下部Hf层用作优异的吸氧材料，以减少自由层/覆盖层界面处的磁性“死层”，从而增加dR / R，并降低He和Jc 。 退火温度降低至约280℃，以产生比350℃退火更平滑的CoFeB / MgO界面和较小的偏移场。 在第二实施例中，AP1层具有CoFeB / CoFe构型，其中下CoFeB层是非晶的，并且上CoFe层是结晶的，以进一步改善dR / R，并将较低的RA降低至10nhm /μm2。

公开(公告)号：US08184411B2

公开(公告)日：2012-05-22

申请号：US12589614

申请日：2009-10-26

申请人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

发明人： Kunliang Zhang ,  Min Li ,  Pokang Wang ,  Yuchen Zhou ,  Cheng T. Horng ,  Ru-Ying Tong

IPC分类号： G11B5/33

CPC分类号： G11B5/3153 ,  B82Y40/00 ,  C23C14/165 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B2005/0024 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T156/10 ,  Y10T428/1107 ,  Y10T428/1114

摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x, or (CoFe/NiCo)x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

摘要翻译： 公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA） 在具有（CoFe / Ni）x，（Co / NiFe）x，（Co / NiCo）x，（CoFe / NiFe）x或（CoFe / NiCo）x）组合物的叠层层中，x为5〜 在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。 层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。 在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

公开(公告)号：US08183061B2

公开(公告)日：2012-05-22

申请号：US12931648

申请日：2011-02-07

申请人： Tom Zhong ,  Chyu-Jiuh Torng ,  Rongfu Xiao ,  Adam Zhong ,  Wai-Ming Johnson Kan ,  Daniel Liu

发明人： Tom Zhong ,  Chyu-Jiuh Torng ,  Rongfu Xiao ,  Adam Zhong ,  Wai-Ming Johnson Kan ,  Daniel Liu

IPC分类号： H01L21/441

CPC分类号： H01L27/228 ,  H01L43/12

摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

摘要翻译： 公开了一种STT-MRAM集成方案，其中通过在CMOS着陆焊盘，接触和覆盖VAC的金属（VAM）焊盘上形成中间通孔接触（VAC）来简化MTJ和CMOS金属之间的连接，以及MTJ 在VAM上。 执行双镶嵌工艺，通过设备区域中的VAC / VAM / MTJ堆叠将BIT线金属连接到CMOS着陆焊盘，并通过设备区域外的BIT连接通孔将BIT线连接焊盘连接到CMOS连接焊盘。 VAM焊盘是由Ta，TaN或用作扩散阻挡层的其它导体制成的单层或复合材料，具有用于MTJ形成的高度光滑的表面，并且在化学机械抛光工艺期间提供了与补充介电材料的优异选择性。 每个VAC为500至3000埃厚，以最小化额外的电路电阻并最小化蚀刻负担。

公开(公告)号：US08178363B2

公开(公告)日：2012-05-15

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US08138561B2

公开(公告)日：2012-03-20

申请号：US12284066

申请日：2008-09-18

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

摘要翻译： 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

公开(公告)号：US08133745B2

公开(公告)日：2012-03-13

申请号：US11975045

申请日：2007-10-17

申请人： Tom Zhong ,  Rongfu Xiao ,  Chyu-Jiuh Torng ,  Adam Zhong

发明人： Tom Zhong ,  Rongfu Xiao ,  Chyu-Jiuh Torng ,  Adam Zhong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps and two etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers by a third etch process. Optionally, the third etch may stop on the tunnel barrier or in the free layer. A second embodiment involves forming a first parallel line pattern on a hard mask layer and transferring the line pattern through the MTJ stack with a first etch step. A planar insulation layer is formed adjacent to the sidewalls in the line pattern and then a second parallel line pattern is formed which is transferred by a second etch through the MTJ stack to form a post pattern. Etch end point may be controlled independently for hard-axis and easy-axis dimensions.

摘要翻译： 公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。 一种方法涉及两个光刻步骤和两个蚀刻步骤，以在通过第三蚀刻工艺通过MTJ叠层堆叠的硬掩模中形成柱。 可选地，第三蚀刻可以在隧道势垒上或在自由层中停止。 第二实施例涉及在硬掩模层上形成第一平行线图案，并通过第一蚀刻步骤通过MTJ堆叠传送线图案。 平面绝缘层与线图案中的侧壁相邻地形成，然后形成第二平行线图案，其通过第二次蚀刻通过MTJ叠层转印以形成柱形图案。 蚀刻终点可以独立控制硬轴和易轴尺寸。