摘要:
A first electrode pattern comprises a first lead-out electrode portion extending continuously along the longitudinal direction of a first dielectric film, a plurality of first capacitor electrode portions each extending from the first lead-out electrode portion almost perpendicularly to the first lead-out electrode portion, and second capacitor electrode portions which are disposed between the first capacitor electrode portions and connected thereto. The second capacitor electrode portions each have a plurality of first sections. Each first section is connected to one end surface and the other end surface extending along the width direction of the first dielectric film of the first capacitor electrode portions through a narrow first fuse portion.
摘要:
An interposer including: a substrate including a first layer and second layer, wherein the first layer and second layer are positioned parallel to each other; electrodes each having a concave-convex structure formed on each facing surface of the first layer and second layer of the substrate; a dielectric layer sandwiched between the electrodes which are formed on each facing surface of the first layer and second layer of the substrate; a first conductive part which vertically passes through the first layer of the substrate from a first outer surface of the substrate and is electrically connected to an electrode formed on a surface of the second layer of the substrate that faces the first layer of the substrate; and a second conductive part which vertically passes through the second layer of the substrate from a second outer surface of the substrate and is electrically connected to an electrode formed on a surface of the first layer of the substrate that faces the second layer of the substrate.
摘要:
A buried capacitor structure including a first conductive metal layer, a first dielectric film, a capacitor, a second dielectric film, and a second conductive metal layer, which are stacked in sequence, wherein the capacitor is buried between the first dielectric film and the second dielectric film, the first conductive metal layer is formed into a first circuit pattern, the second conductive metal layer is formed into a second circuit pattern. The capacitor is a planar comb-shaped capacitor with a positive electrode, a negative electrode, and a capacitor paste filled between the positive electrode and the negative electrode, wherein the positive electrode includes a positive electrode end and a plurality of positive comb branches, the negative electrode includes a negative electrode end and a plurality of negative comb branches, and the positive branches and the negative branches are parallel to and separated from each other.
摘要:
Provided are an embedded capacitor, an embedded capacitor sheet using the embedded capacitor, and a method of manufacturing the same that may increase a surface area to thereby increase a capacity for each unit area and may provide an embedded capacitor in a sheet to thereby readily lay the embedded capacitor on an embedded printed circuit board. The embedded capacitor may include: a common electrode member 11 including a plurality of grooves 11a; a sealing dielectric layer 12 being formed by sealing a nano dielectric powder with a high dielectric constant in the plurality of grooves 11a formed in the common electrode member 11; a buffer dielectric layer 13 sealing and smoothing an uneven portion of the sealing dielectric layer 12 by applying a paste or a slurry including epoxy of 20 Vol % through 80 Vol % and dielectric powder of 20 Vol % through 80 Vol % with respect to the sealing dielectric layer 12; and an individual electrode member 14 being formed on the buffer dielectric layer 13.
摘要:
A capacitor structure includes: a first electrode configured to include a plurality of openings; a second electrode formed in each center of the openings; and a dielectric layer formed to surround the second electrode and fill the openings of the first electrode.
摘要:
In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.
摘要:
A thin-film device includes a substrate, and a capacitor provided on the substrate. The capacitor incorporates a lower conductor layer having a top surface and a side surface; a flattening film disposed to cover the top and side surfaces of the lower conductor layer; a dielectric film disposed on the flattening film; and an upper conductor layer disposed on the dielectric film. The lower conductor layer is composed of an electrode film and a plating film disposed on the electrode film. The dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive and that is smaller than a thickness of the lower conductor layer. A surface roughness in maximum height of a top surface of the flattening film is smaller than that of the top surface of the lower conductor layer and equal to or smaller than the thickness of the dielectric film.
摘要:
An interposer including: a substrate including a first layer and second layer, wherein the first layer and second layer are positioned parallel to each other; electrodes each having a concave-convex structure formed on each facing surface of the first layer and second layer of the substrate; a dielectric layer sandwiched between the electrodes which are formed on each facing surface of the first layer and second layer of the substrate; a first conductive part which vertically passes through the first layer of the substrate from a first outer surface of the substrate and is electrically connected to an electrode formed on a surface of the second layer of the substrate that faces the first layer of the substrate; and a second conductive part which vertically passes through the second layer of the substrate from a second outer surface of the substrate and is electrically connected to an electrode formed on a surface of the first layer of the substrate that faces the second layer of the substrate.
摘要:
An in-line capacitor, having a pair of inner conductor segments, each of the inner conductor segments having a mating surface. A dielectric spacer positioned between the mating surfaces, each of the mating surfaces having corresponding folds formed thereon.
摘要:
Method of making an integrated passive, such as a high quality decoupling capacitor, includes providing a first temporary support, a silicon capacitor wafer, and providing an oxide layer and a conductive layer on it. Then, a second temporary support, such as a handle wafer, may be attached to the capacitor wafer (i.e., to the oxide layer on it) by an adhesive bond. The capacitor wafer may then be destructively removed. A second conductive layer is then provided on an exposed backside of the oxide layer. The addition of a second electrode on the second conductive layer yields the desired high quality capacitor. Further processing steps, such as solder bumping, may be carried out while the capacitor wafer is still attached to the handle wafer. When the desired processing steps are complete, the handle wafer is removed, and the relatively thin high quality integrated capacitor wafer results.