公开(公告)号：US4117504A

公开(公告)日：1978-09-26

申请号：US712324

申请日：1976-08-06

Applicant: Vadim Nikolaevich Maslov ,  Oleg Evgenievich Korobov ,  Alla Naumovna Lupacheva ,  Alexandr Nikolaevich Vlasov ,  Viktor Vasilievich Myasoedov ,  Ellin Petrovich Bochkarev ,  Felix Aronovich Gimelfarb ,  Izidor Karlovich Bronshtein ,  Natalya Ivanovna Lukicheva ,  Evgeny Vladimirovich Sinitsyn ,  Jury Varnavovich Sokurenko ,  Elena Sergeevna Jurova ,  Elena Mikhailovna Kistova ,  Marina Andreevna Konstantinova ,  Veniamin Mikhailovich Samaginov

Inventor： Vadim Nikolaevich Maslov ,  Oleg Evgenievich Korobov ,  Alla Naumovna Lupacheva ,  Alexandr Nikolaevich Vlasov ,  Viktor Vasilievich Myasoedov ,  Ellin Petrovich Bochkarev ,  Felix Aronovich Gimelfarb ,  Izidor Karlovich Bronshtein ,  Natalya Ivanovna Lukicheva ,  Evgeny Vladimirovich Sinitsyn ,  Jury Varnavovich Sokurenko ,  Elena Sergeevna Jurova ,  Elena Mikhailovna Kistova ,  Marina Andreevna Konstantinova ,  Veniamin Mikhailovich Samaginov

IPC: C30B25/04 ,  C30B25/22 ,  G01L9/00 ,  G01N27/414 ,  G01N33/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/363 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L29/84 ,  H01L33/00 ,  H01S5/32 ,  H01L29/161

CPC classification number: C30B25/22 ,  C30B25/04 ,  G01L9/0098 ,  G01N33/0031 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/02417 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02576 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L29/84 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01S5/32 ,  Y10S148/052

Abstract: A heterogeneous semiconductor structure with a composition gradient is used to produce lasers, spectrometers and pressure gauges and comprises a substrate, a transition layer and a main layer in the form of a doped solid solution of AB.sub.x C.sub.1-x having a composition gradient with a constant direction parallel to the main axis of the substrate's surface. The transition layer 2 is also of a doped solid solution of AB.sub.x C.sub.1-x whose composition continuously changes along the main axis, from the portion with a maximum content of the AB component to the portion corresponding to a maximum content of the AC component in the direction perpendicular to the substrate's surface, and from the composition of the main layer 3 on the boundary with the transition layer 2 to the composition having a maximum content of the AB component on the boundary with the substrate. The semiconductor structure with a composition gradient is produced of material transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. After all the strips have been brought under the substrate, the source is stopped for the period of time required for the formation of the main layer to a required thickness.

公开(公告)号：US4013533A

公开(公告)日：1977-03-22

申请号：US561946

申请日：1975-03-25

Applicant: Gerard Cohen-Solal ,  Alain Zozime ,  Claude Sella

Inventor： Gerard Cohen-Solal ,  Alain Zozime ,  Claude Sella

IPC: H01J37/317 ,  C23C14/35 ,  C23C14/42 ,  C30B23/08 ,  H01L21/00 ,  H01L21/203 ,  H01L21/208 ,  H01L21/265 ,  H01L21/363 ,  H01L21/365 ,  H01L31/00 ,  H01L31/04 ,  H01L31/10 ,  C23C15/00

CPC classification number: H01L21/00 ,  C23C14/352 ,  C23C14/355 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L31/00 ,  Y10S148/026 ,  Y10S148/063 ,  Y10S148/169 ,  Y10S438/925

Abstract: A method and apparatus for producing a thin semi-conductor coating on a substrate in a vacuum enclosure, by depositing on the substrate a semi-conductor substance volatilized by a plasma from a source in the enclosure and also depositing on the substrate a metallic doping impurity volatilized by the plasma from another source in the enclosure.

Abstract translation: 一种用于在真空外壳中的基板上制造薄半导体涂层的方法和装置，通过在基板上沉积由等离子体从外壳中的源挥发的半导体物质，并且还在基板上沉积金属掺杂杂质 通过等离子体从外壳中的另一个源挥发。