公开(公告)号：US20190296194A1

公开(公告)日：2019-09-26

申请号：US16305964

申请日：2017-04-28

申请人： Nippon Electric Glass Co., Ltd.

发明人： Toru SHIRAGAMI ,  Takuji OKA

IPC分类号： H01L33/48 ,  H01L21/52 ,  H01L23/10 ,  H01L23/053 ,  C03C25/6208

摘要： A method of producing a hermetic package of the present invention includes the steps of: preparing a ceramic base; preparing a glass cover; forming, on the glass cover, a sealing material layer having a total light transmittance in a thickness direction at a wavelength of laser light to be radiated of 10% or more and 80% or less; arranging the glass cover and the ceramic base so that the glass cover and the ceramic base are laminated on each other through intermediation of the sealing material layer; and irradiating the sealing material layer with the laser light from a glass cover side to soften and deform the sealing material layer, to thereby hermetically integrate the ceramic base and the glass cover with each other to obtain a hermetic package.

公开(公告)号：US10403593B2

公开(公告)日：2019-09-03

申请号：US15837560

申请日：2017-12-11

申请人： Murata Manufacturing Co., Ltd.

发明人： Tsunekazu Saimei ,  Takeshi Suzuki ,  Masashi Yamaura

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L23/29 ,  H01L23/12 ,  H01L23/31 ,  H01L23/488 ,  H01L21/52 ,  H01L21/56 ,  H01L23/13

摘要： A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

公开(公告)号：US20190267252A1

公开(公告)日：2019-08-29

申请号：US16406899

申请日：2019-05-08

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Chun-Li LIU ,  Ali SALIH ,  Mingjiao LIU

IPC分类号： H01L21/48 ,  H01L23/00 ,  H01L23/492 ,  H01L21/52 ,  H01L23/498 ,  H01L29/20

摘要： In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. A first electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a first lead. A second electrical interconnect is coupled between the control terminal of the semiconductor device and a second lead.

公开(公告)号：US20190252232A1

公开(公告)日：2019-08-15

申请号：US15896007

申请日：2018-02-13

申请人： MIKRO MESA TECHNOLOGY CO., LTD.

发明人： Li-Yi CHEN

IPC分类号： H01L21/683 ,  H01L21/52 ,  H01L21/677 ,  H01L21/447 ,  H01L21/449 ,  H01L21/02 ,  H01L21/786 ,  H01L27/15

CPC分类号： H01L21/6838 ,  H01L21/02513 ,  H01L21/447 ,  H01L21/449 ,  H01L21/52 ,  H01L21/67778 ,  H01L21/786 ,  H01L27/153 ,  H01L2221/68368

摘要： A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.

公开(公告)号：US10381316B2

公开(公告)日：2019-08-13

申请号：US15591855

申请日：2017-05-10

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chia-Liang Chung ,  Pei-Ling Li

IPC分类号： H01L23/66 ,  H01L23/06 ,  H01L23/00 ,  H01L23/552 ,  H01L21/52 ,  H01L21/48 ,  H01L21/683 ,  H01L23/31 ,  H01L21/56

摘要： The disclosure relates to a semiconductor package device. The semiconductor package device includes a substrate having a first surface and a second surface opposite to the first surface and including a first conductive contact. The semiconductor package device further includes an electronic component disposed on the first surface of the substrate. The semiconductor package device further includes a metal frame disposed on the first surface of the substrate. The semiconductor package device further includes an antenna disposed on the metal frame, wherein the antenna is electrically isolated from the metal frame and electrically connected to the first conductive contact of the substrate.

公开(公告)号：US10381243B2

公开(公告)日：2019-08-13

申请号：US15659632

申请日：2017-07-26

申请人： FUJI ELECTRIC CO., LTD.

发明人： Tatsuya Karasawa

IPC分类号： H01L23/04 ,  H05K7/00 ,  H05K7/02 ,  H01L21/48 ,  H01L23/16 ,  H01L21/52 ,  H01L21/54 ,  H01L23/057 ,  H01L23/00 ,  H01L23/373 ,  H01L23/24

摘要： A semiconductor module in which no crack of a metal film exists in a terminal is provided. A semiconductor module is provided, including: a semiconductor element; a terminal with a metal film formed on a surface and including a bent portion; a resin case to which the terminal is fixed and in which a through hole is formed opposite to the terminal, the resin case housing a semiconductor element; a fastening portion provided inside the through hole; and a supporting portion provided inside the through hole and supporting the fastening portion.

公开(公告)号：US10380016B2

公开(公告)日：2019-08-13

申请号：US15696983

申请日：2017-09-06

申请人： TOSHIBA MEMORY CORPORATION

发明人： Toshimitsu Arai

IPC分类号： G11C8/00 ,  G06F12/02 ,  H01L25/065 ,  H01L23/00 ,  H01L25/03 ,  H01L25/18 ,  H01L21/52 ,  G11C16/10 ,  H01L23/31

摘要： In one embodiment, a semiconductor device includes a substrate, and a first wiring layer provided on the substrate. The device further includes a first insulator provided on the substrate and the first wiring layer and including an opening. The device further includes a first semiconductor chip provided above the substrate and in the opening of the first insulator, and a wire electrically connecting the first semiconductor chip and the first wiring layer.

公开(公告)号：US10363608B2

公开(公告)日：2019-07-30

申请号：US15757790

申请日：2016-09-07

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Yuki Kawana ,  Kazuhiko Kurafuchi ,  Yoshinori Ejiri ,  Hideo Nakako ,  Chie Sugama ,  Dai Ishikawa

IPC分类号： H01L21/52 ,  B22F7/08 ,  B22F1/00 ,  C04B37/00 ,  H01B1/22 ,  H01L23/00

摘要： Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

公开(公告)号：US10319654B1

公开(公告)日：2019-06-11

申请号：US15829288

申请日：2017-12-01

申请人： Nuvotronics, Inc.

发明人： J. Robert Reid

IPC分类号： H01L23/13 ,  H01L23/00 ,  H01L23/055 ,  H01L21/48 ,  H01L21/52 ,  H01P3/06

摘要： Chip scale package such as a chip scale package having a chip integrated therein to provide an integrated chip scale package.

公开(公告)号：US20190157185A1

公开(公告)日：2019-05-23

申请号：US16099651

申请日：2016-05-11

申请人： Hitachi Automotive Systems, Ltd.

发明人： Nobutake TSUYUNO ,  Morio KUWANO ,  Takeshi TOKUYAMA

IPC分类号： H01L23/473 ,  H01L23/00 ,  H01L21/52 ,  H02M7/00 ,  H02M7/537

摘要： Provided is a compact power conversion device which is excellent in liquid tightness and has high reliability of a terminal connection portion. A power conversion device according to the present invention includes: a case that houses a power semiconductor; a flow path forming body that forms a flow path with an outer surface of the case; a first fixing material in contact with a refrigerant flowing in the flow path; and a second fixing material that is in contact with the first fixing material and the flow path forming body and covers a direction of displacement of the case of the first fixing material caused by water pressure.