公开(公告)号：US08389642B2

公开(公告)日：2013-03-05

申请号：US12874530

申请日：2010-09-02

申请人： Toshiharu Goto ,  Masaaki Yoshida ,  Ryosuke Kobayashi

发明人： Toshiharu Goto ,  Masaaki Yoshida ,  Ryosuke Kobayashi

IPC分类号： C08F8/06

CPC分类号： C08J11/16 ,  C08J2323/06 ,  Y02W30/705

摘要： A method of treating a polymer includes oxidatively treating the polymer including a carbon-carbon bond framework in a gas atmosphere at a pressure of not less than 5.0 MPa and at a temperature of higher than 140° C. and lower than 200° C. by using oxygen included in the gas atmosphere.

摘要翻译： 一种处理聚合物的方法包括在不低于5.0MPa的压力和高于140℃，低于200℃的温度下，在气体气氛中将包含碳 - 碳键骨架的聚合物氧化处理，由 使用包含在气体气氛中的氧气。

公开(公告)号：US08054510B2

公开(公告)日：2011-11-08

申请号：US11665202

申请日：2005-09-30

申请人： Makoto Suzuki ,  Masaaki Yoshida

发明人： Makoto Suzuki ,  Masaaki Yoshida

IPC分类号： H04N1/40 ,  H04N1/04

CPC分类号： H04N1/4076 ,  H04N1/00002 ,  H04N1/00013 ,  H04N1/00031 ,  H04N1/00045 ,  H04N1/0005 ,  H04N1/00063 ,  H04N1/00068 ,  H04N1/00087 ,  H04N1/1912 ,  H04N1/1918 ,  H04N1/401 ,  H04N2201/044

摘要： A document reader comprises line sensors that are staggeredly arranged and read a white reference plate to obtain a white reference read value A, and a white reference average value AA is determined from value A for each line sensor. The line sensors read another white reference plate placed on a document support plate to obtain a white reference read value B, and a white reference read average value BB is determined from value B for each line sensor. A sensitivity effect coefficient C for each line sensor is determined by dividing BB by AA. Using the line sensors, there are obtained a document read value E for each line sensor by reading an illuminated document on the document support plate, a white reference read value Aa by reading with the white reference plate before reading the document, and a black reference read value D by reading the white reference plate under a condition that an illumination is turned off before reading of the document. Shading for the line sensors is corrected using the coefficient C, the values Aa, D and E, and a number of gradation levels for image regions corresponding to read areas of the document.

摘要翻译： 文档读取器包括交错布置并读取白色参考板以获得白色参考读取值A的行传感器，并且针对每个行传感器从值A确定白色参考平均值AA。 线传感器读取放置在文件支撑板上的另一个白色参考板以获得白色参考读取值B，并且从每个行传感器的值B确定白色参考读取平均值BB。 通过将BB除以AA来确定每个线传感器的灵敏度效应系数C。 使用线传感器，通过在读取文档之前通过用白色参考板读取来读取文档支持板上的照明文档和白色参考读取值Aa，获得每行线传感器的文档读取值E，以及黑色参考 在读取文档之前，在照明被关闭的条件下读取白色参考板读取值D. 使用系数C，值Aa，D和E以及对应于文档的读取区域的图像区域的灰度级数来校正行传感器的阴影。

公开(公告)号：US20110065053A1

公开(公告)日：2011-03-17

申请号：US12879809

申请日：2010-09-10

申请人： Masaaki YOSHIDA ,  Kiyoshi ISHIKAWA ,  Atsushi SAWANO ,  Yuriko SHIRAI ,  Takumi NAMIKI

发明人： Masaaki YOSHIDA ,  Kiyoshi ISHIKAWA ,  Atsushi SAWANO ,  Yuriko SHIRAI ,  Takumi NAMIKI

IPC分类号： G03F7/20 ,  C08F32/08 ,  C08L55/00

CPC分类号： G03F7/2041 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/11

摘要： The present invention provides a material for forming a protective film that has favorable alkali solubility and gives a protective film excelling in water repellency, as well as a method for forming a photoresist pattern using this material for forming a protective film. The material for forming a protective film of the present invention contains an alkali-soluble polymer having a unit derived from a monomer represented by the following general formula (A-1) as a constitutional unit. In the general formula (A-1), R1 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or the like; R2, R3, and R4 are each independently an alkylene chain having 1 to 6 carbon atoms or the like; R5 and R6 are each independently an alkyl group or fluoroalkyl group having 1 to 15 carbon atoms or the like; and at least one of R5 and R6 is a fluoroalkyl group; Z is an alkylene chain having 1 to 2 carbon atoms or an oxygen atom; m is 0 or 1; and n is an integer of 0 to 3.

摘要翻译： 本发明提供一种形成保护膜的材料，该保护膜具有良好的碱溶性，并提供防水性优异的保护膜，以及使用该材料形成保护膜形成光刻胶图案的方法。 用于形成本发明的保护膜的材料含有具有由下述通式（A-1）表示的单体衍生的单元作为结构单元的碱溶性聚合物。 在通式（A-1）中，R 1为氢原子，碳原子数1〜6的烷基等; R 2，R 3和R 4各自独立地为具有1〜6个碳原子的亚烷基链等; R 5和R 6各自独立地为具有1〜15个碳原子的烷基或氟代烷基等; 并且R 5和R 6中的至少一个是氟代烷基; Z是具有1至2个碳原子或氧原子的亚烷基链; m为0或1; n为0〜3的整数。

公开(公告)号：US07879529B2

公开(公告)日：2011-02-01

申请号：US11658900

申请日：2005-07-29

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Keita Ishizuka

IPC分类号： G03F7/11 ,  G03F7/26 ,  C07D265/00 ,  C07D285/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

摘要翻译： 在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加 处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。 此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。 使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

公开(公告)号：US20090011375A1

公开(公告)日：2009-01-08

申请号：US11597124

申请日：2005-05-24

申请人： Taku Hirayama ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

IPC分类号： G03F7/20 ,  G03C5/00

CPC分类号： G03F7/2041

摘要： A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography.

摘要翻译： 提供液浸光刻工艺。 特别地，液浸式光刻法是通过使折射率高于空气和预定厚度的液体暴露于光而提高抗蚀剂图案的分辨率的方法，同时至少设置抗蚀剂膜 在允许用于光刻的曝光光到达抗蚀剂膜的途径中。 因此，可以防止所使用的抗蚀剂膜和液体在液浸光刻中的劣化。 因此，通过液浸光刻技术可以获得高分辨率抗蚀图案的形成。 因此，采用在光刻工艺中使用的曝光用透光性的硅系液体作为液浸式光刻用浸液。

公开(公告)号：US20080268626A1

公开(公告)日：2008-10-30

申请号：US12213676

申请日：2008-06-23

申请人： Masaaki Yoshida ,  Naohiro Ueda ,  Masato Kijima

发明人： Masaaki Yoshida ,  Naohiro Ueda ,  Masato Kijima

IPC分类号： H01L21/425

CPC分类号： H01L27/0928 ,  H01L21/823892 ,  H01L27/1052

摘要： A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.

公开(公告)号：US07326512B2

公开(公告)日：2008-02-05

申请号：US10501459

申请日：2003-11-28

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

IPC分类号： G03F7/039 ,  C08F18/20 ,  C08F214/18 ,  C08F14/18

CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound.To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

公开(公告)号：US20070224520A1

公开(公告)日：2007-09-27

申请号：US11578189

申请日：2005-04-05

申请人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Hideo Hada ,  Masaaki Yoshida

发明人： Toshiyuki Ogata ,  Syogo Matsumaru ,  Hideo Hada ,  Masaaki Yoshida

IPC分类号： C08F8/00 ,  C07C69/54 ,  G03F7/039 ,  C08F20/20

CPC分类号： C08F220/28 ,  C07C69/54 ,  C07C2601/14 ,  C08F222/1006 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397

摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n  (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

摘要翻译： 化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法 图案，能够以高分辨率形成精细图案。 高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基， 通过如下所示的通式（1）：[式1] <？in-line-formula description =“In-line Formulas”end =“lead”？> - CH id =“PRIVATE-USE-CHARACTER-00001”he =“7.20mm”wi =“8.47mm”file =“US20070224520A1-20070927-Brketopenst.TIF”alt =“私人使用字符Brketopenst”img-content =“character”img -format =“tif”/> O-CH <2> （1）<？in-line-formula description =“In-line Formulas”end =“ 尾“→（其中，A表示1〜20个碳原子的有机基团，其化合价至少为n + 1，n表示1〜4的整数）。

公开(公告)号：US07264918B2

公开(公告)日：2007-09-04

申请号：US10546529

申请日：2004-03-24

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/207 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.

摘要翻译： 一种用于液浸光刻工艺的抗蚀剂组合物，其包括：（A）包含（a1）碱可溶性结构单元的聚合物，其各自包含具有（i）氟原子或氟代烷基的脂环族基团和（ii）醇羟基 基团，其中聚合物由于酸的作用而改变碱溶解度; 和（B）由于曝光而产生酸的酸发生剂，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。 通过抗蚀剂组合物或方法，可以避免浸渍液体的不利影响，同时实现高分辨率和高焦度聚焦。

公开(公告)号：US20070134593A1

公开(公告)日：2007-06-14

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。