公开(公告)号：US20120063221A1

公开(公告)日：2012-03-15

申请号：US13226983

申请日：2011-09-07

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

摘要翻译： 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

公开(公告)号：US20120061779A1

公开(公告)日：2012-03-15

申请号：US13221261

申请日：2011-08-30

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  H01L43/08

摘要： There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.

摘要翻译： 提供了包括磁性层的记忆元件，该磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，碳具有等于或大于3原子％的碳含量，以及 相对于Fe，Co和Ni的总含量小于70原子％，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构并与磁性层接触的氧化物形成的氧化物层。

公开(公告)号：US20120057403A1

公开(公告)日：2012-03-08

申请号：US13217925

申请日：2011-08-25

申请人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/14

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.

摘要翻译： 公开了一种存储元件，其包括通过磁性材料的磁化状态维持信息的存储层，作为存储在存储层中的信息的参考的磁化的磁化固定层，以及由 非磁性材料，并且设置在存储层和磁化固定层之间。 通过使用根据在具有存储层，中间层和磁化固定的层叠结构的层叠方向上流动的电流发生的自旋转矩磁化反转而使存储层的磁化反转来进行信息的存储 存储层包括含有Fe和Co中的至少一种的合金区域，并且存储层在其磁化反转期间接收的有效抗磁场的大小小于存储层的饱和磁化量。

公开(公告)号：US20120032289A1

公开(公告)日：2012-02-09

申请号：US13192995

申请日：2011-07-28

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

摘要翻译： 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。

公开(公告)号：US20070030724A1

公开(公告)日：2007-02-08

申请号：US11460135

申请日：2006-07-26

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/10

摘要： The present invention provides a memory element including a memory layer that holds information based on a magnetization state of a magnetic substance, and a magnetization pinned layer that is provided for the memory layer with intermediary of an intermediate layer therebetween, the intermediate layer being composed of an insulator. Spin-polarized electrons are injected in a layer-stacking direction to thereby change a direction of magnetization of the memory layer, so that information is recorded in the memory layer. At least one ferromagnetic layer included in the memory layer is composed mainly of CoFeTa, and has Ta content in a range from 1 atomic percent (at %) to 20 at %.

摘要翻译： 本发明提供了一种存储元件，其包括存储层，其基于磁性物质的磁化状态保存信息;以及磁化钉扎层，其被设置在存储层之间，其间具有中间层，中间层由 绝缘体。 自旋极化电子以层叠方式注入，从而改变存储层的磁化方向，从而将信息记录在存储层中。 包含在存储层中的至少一个铁磁层主要由CoFeTa组成，并且Ta含量在1原子百分比（at％）至20at％的范围内。

公开(公告)号：US20050237788A1

公开(公告)日：2005-10-27

申请号：US11100914

申请日：2005-04-07

申请人： Hiroshi Kano ,  Hiroyuki Ohmori

发明人： Hiroshi Kano ,  Hiroyuki Ohmori

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C19/08 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/16 ,  G11C11/5607

摘要： A magnetic memory includes magnetic memory elements 3 and 5 having memory layers capable of storing information by the magnetized state of a magnetic material, in which a plurality of magnetic memory elements 3 and 5 is electrically connected in series or in parallel to each other near an intersection point between two kinds of interconnections 1 and 6 which cross each other and between the two kinds of the interconnections 1 and 6, threshold values of recording electric currents by which information can be recorded on a plurality of magnetic memory elements 3 and 5 are made different from each other and the memory layers of the respective magnetic memory elements 3 and 5 comprise different information storage units. Thus, the magnetic memory becomes able to record much more information per unit area.

摘要翻译： 磁存储器包括具有能够通过磁性材料的磁化状态存储信息的存储层的磁存储元件3和5，其中多个磁存储元件3和5彼此串联或并联电连接在一个 在两种互连1和6之间彼此交叉并且在两种互连1和6之间的两种互连1和6之间的交点，制成了可以将信息记录在多个磁存储元件3和5上的记录电流的阈值 各个磁存储元件3和5的存储层彼此不同，包括不同的信息存储单元。 因此，磁存储器能够记录每单位面积更多的信息。

公开(公告)号：US5654844A

公开(公告)日：1997-08-05

申请号：US440490

申请日：1995-05-12

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yasunari Sugiyama ,  Mitsuharu Shoji

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yasunari Sugiyama ,  Mitsuharu Shoji

IPC分类号： G11B5/265 ,  G11B5/008 ,  G11B5/147 ,  G11B5/187 ,  G11B5/23 ,  G11B5/29 ,  G11B5/48 ,  G11B5/53 ,  G11B5/027

CPC分类号： G11B5/1872 ,  G11B5/00865 ,  G11B5/187 ,  G11B5/29 ,  G11B5/488 ,  G11B5/531 ,  G11B5/534

摘要： A magnetic head assembly having two heads with the magnetic layer of one angled between 80.degree. to 100.degree. of the gap of the other, and method and apparatus using same. The angle formed on a magnetic tape by side surfaces of a laminated magnetic film of the first magnetic head and the surfaces of a magnetic gap of the second magnetic head are between 80.degree. and 100.degree..

摘要翻译： 一种磁头组件，其具有两个磁头，磁层的一个角度在另一个的间隙的80°至100°之间，以及使用其的方法和装置。 第一磁头的叠层磁性膜的表面和第二磁头的磁隙表面在磁带上形成的角度为80°〜100°。

公开(公告)号：US5786103A

公开(公告)日：1998-07-28

申请号：US672043

申请日：1996-06-26

申请人： Hiroyuki Ohmori ,  Mitsuharu Shouji ,  Tetsuya Yamamoto ,  Yasunari Sugiyama

发明人： Hiroyuki Ohmori ,  Mitsuharu Shouji ,  Tetsuya Yamamoto ,  Yasunari Sugiyama

IPC分类号： G11B5/31 ,  C22C38/00 ,  G11B5/127 ,  G11B5/147 ,  H01F10/13 ,  H01F10/14 ,  G11B5/66 ,  B32B9/00 ,  G11B5/70

CPC分类号： H01F10/131 ,  G11B5/147 ,  G11B5/3109 ,  Y10S428/90 ,  Y10T428/115

摘要： A soft magnetic film having a high saturation magnetic flux density and superior soft magnetic properties and capable of maintaining superior soft magnetic properties when worked to a magnetic head. The magnetic film is represented by the general formula of Fe.sub.x M.sub.y L.sub.z J.sub.u Q.sub.w, wherein M denotes at least one selected from the group of Ru, Cr, Ti, Mo, W and Rh, L denotes at least one selected from the group of Y, Hf, Zr, Ta and Nb, J denotes at least one of Al and Ga, Q denotes at least one of Si and Ge and x, y, z, u and w denote the proportions of respective atoms in atom %, and wherein the composition is given by 68.ltoreq.x

摘要翻译： 具有高饱和磁通密度和优异的软磁性能的软磁性膜，并且能够在加工到磁头时保持优异的软磁特性。 磁性膜由通式FexMyLzJuQw表示，其中M表示选自Ru，Cr，Ti，Mo，W和Rh中的至少一种，L表示选自Y，Hf，Zr中的至少一种 ，Ta和Nb，J表示Al和Ga中的至少一种，Q表示Si和Ge中的至少一种，x，y，z，u和w表示原子％的各原子的比例，并且其中给出组合物 通过68 10和10

公开(公告)号：US5666249A

公开(公告)日：1997-09-09

申请号：US640987

申请日：1996-04-22

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yasunari Sugiyama

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yasunari Sugiyama

IPC分类号： G11B5/127 ,  G11B5/17 ,  G11B5/21 ,  G11B5/29 ,  G11B5/53

CPC分类号： G11B5/21 ,  G11B5/1274 ,  G11B5/17 ,  G11B5/29 ,  G11B5/531

摘要： A magnetic head is disclosed in which a pair of magnetic core halves, each having a magnetic metal film formed in the vicinity of at least a substrate surface facing a magnetic recording medium, are abutted to each other for defining a magnetic gap between the magnetic metal films, wherein a recess for forming a coil is formed in an abutting surface of at least one of the magnetic core halves and the coil formed by a thin film forming technique is arranged within the recess. A multi-channel magnetic head is also disclosed which includes a plurality of magnetic heads having different azimuth angles of the magnetic gaps, wherein each magnetic head is formed by abutting a pair of magnetic core halves to each other, each of the magnetic core halves having a magnetic metal film formed in the vicinity of at least a substrate surface facing a magnetic recording medium, for defining a magnetic gap between the magnetic metal films, and wherein a recess for forming a coil is formed in the abutting surface of at least one of the magnetic core halves, and the coil is formed in the recess by thin film forming technique. The methods for producing the magnetic head and the multi-channel magnetic head are also disclosed.

摘要翻译： 公开了一种磁头，其中一对磁芯半部分彼此邻接，以形成在与磁记录介质相对的至少基板表面附近形成的磁性金属膜，以在磁性金属 膜，其中在所述凹部内设置有用于形成线圈的凹部，所述凹部形成在至少一个所述磁芯半部和通过薄膜形成技术形成的所述线圈的邻接表面中。 还公开了一种多通道磁头，其包括具有磁隙的不同方位角的多个磁头，其中每个磁头通过将一对磁芯半体彼此邻接而形成，每个磁芯半部具有 形成在至少面对磁记录介质的基板表面附近的磁性金属膜，用于限定磁性金属膜之间的磁隙，并且其中用于形成线圈的凹部形成在至少一个 磁芯半部，并且通过薄膜形成技术在凹部中形成线圈。 还公开了用于制造磁头和多通道磁头的方法。

公开(公告)号：US5796564A

公开(公告)日：1998-08-18

申请号：US578630

申请日：1996-01-05

申请人： Mitsuharu Shouji ,  Hiroyuki Ohmori ,  Yasunari Sugiyama ,  Tetsuya Yamamoto

发明人： Mitsuharu Shouji ,  Hiroyuki Ohmori ,  Yasunari Sugiyama ,  Tetsuya Yamamoto

IPC分类号： G11B5/10 ,  G11B5/147 ,  G11B5/17 ,  G11B5/31

CPC分类号： G11B5/3106 ,  G11B5/10 ,  G11B5/1475 ,  G11B5/17 ,  G11B5/3113

摘要： This invention has a principal object to eliminate, in a magnetic head and a method of manufacturing the same, the necessity of filling glass, etc. onto a magnetic film to thereby improve reliability of the magnetic head. This invention resides in a method of manufacturing a magnetic head including a pair of magnetic core half bodies opposite to each other, each of the magnetic core half bodies being such that a magnetic film is formed on a base, in which a thin film coil is formed at least at one surface of butting plane surfaces between these magnetic core half bodies, characterized in that, in forming the magnetic film on the base, recessed portions are formed in advance by ion milling, etc. at the base to form the magnetic film at the recessed portions. In this case, it is desirable that the magnetic film consists of a magnetic film having axis of easy magnetization in the depth direction of the magnetic gap and a magnetic film having axis of easy magnetization perpendicular to the axis of easy magnetization.

摘要翻译： PCT No.PCT / JP95 / 00884 Sec。 371日期1996年1月5日 102（e）日期1996年1月5日PCT提交1995年5月9日PCT公布。 公开号WO95 / 30984 日期：1995年11月16日本发明的主要目的是在磁头及其制造方法中消除将玻璃等填充到磁性膜上的必要性，从而提高磁头的可靠性。 本发明在于一种制造磁头的方法，所述磁头包括一对彼此相对的磁芯半体，每个磁芯半体使得在基底上形成磁性膜，其中薄膜线圈是 至少在这些磁芯半体之间的对接平面的一个表面上形成，其特征在于，在基底上形成磁性膜时，通过在基底处的离子铣削等预先形成凹部以形成磁性膜 在凹部处。 在这种情况下，理想的是，磁性膜由在磁隙的深度方向上容易磁化的轴的磁性膜和容易磁化的轴与容易磁化的轴垂直的磁性膜构成。