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    Testing content addressable static memories
    101.
    发明授权
    Testing content addressable static memories 有权
    测试内容可寻址静态记忆

    公开(公告)号：US06496950B1

    公开(公告)日：2002-12-17

    申请号：US09372275

    申请日：1999-08-11

    Applicant: Jun Zhao ,  Mukesh Puri ,  V. Swamy Irrinki

    Inventor： Jun Zhao ,  Mukesh Puri ,  V. Swamy Irrinki

    IPC: G11C2900

    CPC classification number: G11C15/00 ,  G11C29/38

    Abstract: A CAM testing procedure detects storage logic faults, comparison logic faults, and faults caused by interactions between the storage and comparison logic for both single port and dual port CAM's. To uncover faults in the storage logic, a series of read and write operations are performed, either using a standard test sequence, such as the March C algorithm, or any other desired test sequence. The CAM test, however, intermixes comparison operations with the read and write operations to uncover faults in the comparison logic. For dual port memories, the test sequence comprises executing comparison operations concurrently with the read and/or write operations, thus revealing faults between the storage and comparison logic. For single port memories, the test sequence comprises performing a comparison operation following the read/write operations at each address, immediately verifying the comparison logic at each address.

    Abstract translation: CAM测试程序检测存储逻辑故障，比较逻辑故障和由单端口和双端口CAM的存储和比较逻辑之间的交互引起的故障。 为了发现存储逻辑中的故障，使用标准测试序列（如March C算法）或任何其他所需的测试序列执行一系列读写操作。 然而，CAM测试将比较操作与读取和写入操作混合，以发现比较逻辑中的故障。 对于双端口存储器，测试序列包括与读取和/或写入操作同时执行比较操作，从而揭示存储和比较逻辑之间的故障。 对于单端口存储器，测试序列包括在每个地址的读/写操作之后执行比较操作，立即验证每个地址处的比较逻辑。

    CVD ruthenium seed for CVD ruthenium deposition
    102.
    发明授权
    CVD ruthenium seed for CVD ruthenium deposition 失效
    CVD钌种子用于CVD钌沉积

    公开(公告)号：US06479100B2

    公开(公告)日：2002-11-12

    申请号：US09827878

    申请日：2001-04-05

    Applicant: Xiaoliang Jin ,  Christopher P. Wade ,  Xianzhi Tao ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    Inventor： Xiaoliang Jin ,  Christopher P. Wade ,  Xianzhi Tao ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    IPC: C23C1640

    CPC classification number: C23C16/40 ,  C08F14/06 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/56

    Abstract: The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

    Abstract translation: 本发明提供了在基材上形成钌籽晶层的方法，包括将含钌化合物引入CVD装置的步骤; 将氧气引入CVD装置中; 在处理室中保持富氧环境以初始形成氧化钌种子层; 汽化含钌化合物; 通过化学气相沉积将氧化钌种子层沉积到衬底上; 并在形成钌种子层的气体环境中退火沉积的氧化钌种子层。 还提供了通过金属有机化学气相沉积在金属钌晶种层上使用金属有机前体沉积钌金属薄膜的方法。

    Chemical vapor deposition of ruthenium films for metal electrode applications
    103.
    发明授权
    Chemical vapor deposition of ruthenium films for metal electrode applications 失效
    用于金属电极应用的钌膜的化学气相沉积

    公开(公告)号：US06440495B1

    公开(公告)日：2002-08-27

    申请号：US09632497

    申请日：2000-08-03

    Applicant: Christopher P. Wade ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    Inventor： Christopher P. Wade ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    IPC: C23C1606

    CPC classification number: C23C16/18

    Abstract: The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300° C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500° C.

    Abstract translation: 本发明提供了一种通过液体源化学气相沉积在基片上沉积钌膜的方法，其中源材料在室温下为液体并且利用工艺条件使得钌膜的沉积在动态限制温度范围内的温度下发生 。 还提供了一种通过使用双 - （乙基环戊二烯基）钌的液体源化学气相沉积在基板上沉积薄钌膜的方法，其通过在约100-300℃的蒸发温度下汽化双 - （乙基环戊二烯基）钌来形成 CVD源材料气体，在基板温度为约100-500℃下，使用CVD源材料气体和氧源反应气体，在反应室中的基板上提供氧源反应气体并形成薄钌膜。

    Reducing sand production from a well formation
    104.
    发明授权
    Reducing sand production from a well formation 有权
    从井井减少砂产量

    公开(公告)号：US06431278B1

    公开(公告)日：2002-08-13

    申请号：US09680124

    申请日：2000-10-05

    Applicant: Frederic Guinot ,  Jun Zhao ,  Simon G. James

    Inventor： Frederic Guinot ,  Jun Zhao ,  Simon G. James

    IPC: E21B4317

    CPC classification number: E21B49/00 ,  E21B43/02 ,  E21B43/267

    Abstract: A method and apparatus for performing sand control using fracturing is described. A curve is defined that correlates the percentage of flow through out-of-phase perforations (those perforations not aligned with fractures) with the fracture conductivity over formation permeability. Given a desired production flow, formation conductivity may be defined. This allows the well operator to perform the proper fracturing operation to achieve the desired fracture conductivity. Alternatively, after a well has been fractured, and sand production is observed, a critical flow rate and the corresponding drawdown pressure can be calculated to prevent sand production.

    Abstract translation: 描述了使用压裂进行砂控制的方法和装置。 定义了一个曲线，其将通过异相穿孔（那些穿孔与裂缝不对齐）的流量的百分比与断层电导率相比较地层渗透率相关联。 给定期望的生产流程，可以定义地层导电性。 这允许井操作者进行适当的压裂操作以获得所需的断裂导电性。 或者，在井已经断裂并且观察到砂产生之后，可以计算临界流量和相应的压降压力以防止产沙。

    Gradient-based pixel interpolation
    105.
    发明授权
    Gradient-based pixel interpolation 失效
    基于梯度的像素插值

    公开(公告)号：US06281875B1

    公开(公告)日：2001-08-28

    申请号：US09069291

    申请日：1998-04-29

    Applicant: Jun Zhao ,  Jonathan Hui ,  Tong Zheng

    Inventor： Jun Zhao ,  Jonathan Hui ,  Tong Zheng

    IPC: G60T536

    CPC classification number: G06T3/4007 ,  G06T11/001

    Abstract: In a method for determining a data value for a target pixel in a destination image based on data values for pixels in a source image, with the destination image being scaled relative to the source image, calculating a position in the source image based on position of a target pixel in the destination image, testing the presence of a diagonal gradient in the source image at the position determined in the calculating step, the testing step testing for the presence of a diagonal gradient by reference to values of pixels in the source image that surround the position calculated in the calculating step, responsive to the presence of a diagonal gradient in the testing step, calculating a data value for the target pixel based on interpolation of data values for diagonally-adjacent pixels in the source image, and responsive to the absence of a diagonal gradient in the testing step, calculating a data value for the target pixel based on interpolation of data values for at least all four surrounding pixels in the source image.

    Abstract translation: 在用于基于源图像中的像素的数据值确定目标图像中的目标像素的数据值的方法中，其中目标图像相对于源图像被缩放，基于源图像的位置来计算源图像中的位置 目标图像中的目标像素，测试在计算步骤中确定的位置处源图像中对角线梯度的存在，测试步骤通过参考源图像中的像素值来测试是否存在对角梯度 围绕在计算步骤中计算的位置，响应于在测试步骤中是否存在对角梯度，基于源图像中对角线相邻像素的数据值的内插计算目标像素的数据值，并响应于 在测试步骤中不存在对角梯度，基于至少所有四个surroun的数据值的插值来计算目标像素的数据值 源图像中的ding像素。

    High temperature, high flow rate chemical vapor deposition apparatus and related methods
    109.
    发明授权
    High temperature, high flow rate chemical vapor deposition apparatus and related methods 失效
    高温，高流量化学气相沉积装置及相关方法

    公开(公告)号：US06189482B1

    公开(公告)日：2001-02-20

    申请号：US08799415

    申请日：1997-02-12

    Applicant: Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

    Inventor： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

    IPC: C23C1600

    CPC classification number: H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

    Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    Abstract translation: 本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

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